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Nexperia USA Inc. BAS21H,115
- Part No.:
- BAS21H,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SOD-123F
- Datasheet:
-
BAS21H,115.pdf
- Description:
- DIODE GP 200V 200MA SOD123F
- Quantity:
- Payment:
- Shipping:
Inventory:10,659
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Product details
Overview
BAS21H,115 from Nexperia is a single high-voltage switching diode in an SOD123F surface-mount package, rated for 200 V reverse voltage and 200 mA forward current, with 50 ns reverse recovery time and 5 pF junction capacitance at 0 V. It serves as a fast-switching rectifier in high-frequency power supply snubbers, signal clamping circuits, and protection paths where low capacitance and rapid turn-off are critical.
For engineers reviewing the BAS21H,115 datasheet, BAS21H,115 pinout, BAS21H,115 application, or BAS21H,115 equivalent, key selection criteria include verified reverse recovery timing under 50 ns, cathode-anode polarity marking (B2), thermal resistance of 330 K/W in free air, and compatibility with reflow-only soldering on FR4 PCBs.
Technical Context
The BAS21H,115 is a planar epitaxial silicon switching diode optimized for high-speed, high-voltage operation. Its 50 ns trr is measured under standardized pulse conditions (IF/IR = 30 mA, RL = 100 Ω, IR measurement at 3 mA), and its 5 pF capacitance at 0 V enables minimal signal distortion in RF and digital edge-clipping applications.
It operates across −65 °C to +150 °C ambient and supports non-repetitive surge currents up to 9 A (1 µs) and 1.7 A (10 ms). The device's 1 V forward voltage at 100 mA and 100 nA reverse leakage at 200 V reflect tight process control for stable switching performance in precision analog and mixed-signal systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 200 V - supports DC blocking in 170 VAC-derived supplies and transient suppression up to IEC 61000-4-5 Level 3. |
| Forward Current (IF) | 200 mA continuous - sufficient for logic-level signal routing, low-power clamp networks, and auxiliary bias paths. |
| Reverse Recovery Time (trr) | 50 ns - enables reliable operation in 1–2 MHz switching converters and high-edge-rate digital interface protection. |
| Junction Capacitance (Cd) | 5 pF at 0 V - minimizes loading on high-impedance nodes in RF detector circuits and clock line clamps. |
| Forward Voltage (VF) | 1.0 V at 100 mA - ensures low conduction loss in low-duty-cycle pulse applications without thermal runaway risk. |
| Thermal Resistance (Rth(j-a)) | 330 K/W - defines maximum power dissipation (375 mW at Tamb ≤25 °C) for board-level thermal design on standard FR4. |
Pinout & Package
The BAS21H,115 is housed in a compact SOD123F plastic SMD package (3.6 mm × 2.7 mm × 1.2 mm), featuring flat leads for low-profile mounting and reflow-compatible footprint per Nexperia's recommended land pattern (Fig 7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Marked with bar on top surface; connects to higher-potential node during reverse bias; primary path for reverse leakage and recovery current. |
| 2 | Anode | Unmarked terminal; connects to lower-potential node during conduction; carries full forward current and surge pulses. |
Key Features
| Feature | Design Value |
|---|---|
| High-Voltage Blocking | 250 V repetitive peak reverse voltage (VRRM) allows margin above 200 V VR rating for transient headroom in industrial power rails. |
| Fast Switching Speed | 50 ns trr enables use in >1 MHz flyback snubbers and digital signal edge shaping without tail current artifacts. |
| Low Junction Capacitance | 5 pF at 0 V reduces capacitive coupling in high-frequency sampling circuits and preserves signal integrity in test equipment front-ends. |
| Reflow-Only Soldering | Qualified only for reflow (not wave or hand soldering); ensures mechanical reliability and avoids lead-frame delamination in automated assembly. |
Applications
| Power Supply Snubber Network | Digital Signal Clamping |
|---|---|
Use Scenario: Placed across MOSFET drain-source in offline flyback converters to absorb turn-off voltage spikes. IC Role / Device Role / Timing Role: Fast-recovery diode absorbing inductive energy during switch transition; operates in <100 ns windows. Use Value: 50 ns trr and 200 V VR prevent secondary breakdown while 5 pF Cd avoids resonant ringing with transformer leakage inductance. |
Use Scenario: Connected between microcontroller GPIO and external sensor line to limit overvoltage during ESD events. IC Role / Device Role / Timing Role: Clamp diode shunting transient current to rail; activated within nanoseconds of voltage excursion beyond VF. Use Value: 100 nA IR at 200 V ensures negligible standby leakage; 1.0 V VF at 100 mA provides predictable clamping threshold for 3.3 V logic. |
| RF Detector Input Protection | High-Speed Logic-Level Translation |
Use Scenario: Mounted at input of logarithmic amplifier in spectrum analyzer front-end to protect against antenna-coupled surges. IC Role / Device Role / Timing Role: High-impedance protection element with minimal parasitic capacitance; conducts only during overvoltage excursions. Use Value: 5 pF Cd prevents bandwidth degradation above 100 MHz; 200 V VR withstands induced transients from nearby RF sources. |
Use Scenario: Used in level-shifting circuit between 5 V microcontroller and 12 V actuator driver to isolate control signals. IC Role / Device Role / Timing Role: Unidirectional signal path enabling safe bidirectional voltage translation via open-drain configuration. Use Value: 200 mA IF rating supports drive capability for optocoupler LEDs; 330 K/W Rth(j-a) permits sustained operation at 50% duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBD2102LT1G | 200 V VR, 250 mA IF, 50 ns trr, but 6 pF Cd and 1.1 V VF at 100 mA. | Slightly higher capacitance limits use in >500 MHz RF paths; higher VF increases conduction loss in battery-powered clamps. | Select when higher surge current rating (IFSM = 2 A) is required and 1 pF extra capacitance is acceptable. |
| BAS16H,115 | 100 V VR, 200 mA IF, 4 ns trr, 2 pF Cd - faster but lower voltage rating. | Not suitable for 170 VAC-derived rails; ideal for 5–24 V logic-level clamping where speed dominates voltage margin. | Choose for sub-10 ns timing-critical interfaces (e.g., LVDS termination) where 100 V VR suffices. |
Compared with MMBD2102LT1G and BAS16H,115, the BAS21H,115 uniquely balances 200 V blocking, 50 ns recovery, and 5 pF capacitance-making it optimal for 100–250 V industrial snubbers and mid-frequency RF protection where both voltage headroom and speed matter.
Availability
BAS21H,115 is available at Aetrix Electronics and suitable for power supply snubber networks, digital signal clamping, RF detector input protection, and high-speed logic-level translation requiring stable component supply and consistent parametric performance across production batches.
Supply support for BAS21H,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.
The BAS21H,115 belongs to Nexperia's high-voltage switching diode product line, engineered for robust performance in industrial power conversion, signal integrity protection, and ESD-hardened interface circuits.
FAQ
Is BAS21H,115 suitable for reflow soldering only?
Yes. Nexperia explicitly specifies reflow soldering as the sole qualified method for BAS21H,115. Wave and hand soldering are not validated and risk internal delamination or solder joint voiding due to thermal stress on the SOD123F leadframe. Reflow profiles must follow JEDEC J-STD-020, with peak temperature ≤260 °C and time above 217 °C limited to 60–150 seconds.
What does the 'B2' marking indicate on BAS21H,115?
The 'B2' marking identifies the device as BAS21H per Nexperia's coding system (Table 4). The cathode is denoted by a bar adjacent to pin 1, visible as a dark band on the top surface of the SOD123F package. This marking aligns with IPC-7351 standards and is confirmed in Figure 2 of the official datasheet Rev. 02.
Can BAS21H,115 replace BAS21 in existing designs?
Yes, with verification of thermal layout. BAS21H,115 uses the same SOD123F package as BAS21 but features improved thermal resistance (Rth(j-sp) = 70 K/W vs. BAS21's 80 K/W) and tighter trr distribution. Layouts designed for BAS21 will accommodate BAS21H,115, though junction temperature should be recalculated using the updated Rth(j-a) = 330 K/W value.
How is reverse recovery time (trr) measured for BAS21H,115?
trr is measured per Figure 5 in the datasheet: switching from IF = 30 mA to IR = 30 mA into RL = 100 Ω, with IR sampled at 3 mA. Input uses a square-wave generator with RS = 50 Ω; output is captured on a sampling oscilloscope. The 50 ns value is the typical result under these defined conditions-not a guaranteed minimum or maximum.
BAS21H,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOD-123F
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 200 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123F
- Operating Temperature - Junction:
- 150°C (Max)
BAS21H,115 FAQ
1.How can I place an order for BAS21H,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS21H,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS21H,115 reliable?
The price and inventory of BAS21H,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21H,115 is usually 5 days.
3.What payment methods are accepted for BAS21H,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21H,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS21H,115?
BAS21H,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS21H,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS21H,115?
For technical support, including BAS21H,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21H,115 requirements.
6.How does Aetrix verify that BAS21H,115 is sourced from the original manufacturer or authorized distributors?
All BAS21H,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21H,115 meets industry standards.
7.What is the process for return or replacement of BAS21H,115?
All BAS21H,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS21H,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS21H,115 part is unused and in its original packaging.
Return procedure for BAS21H,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS21H,115 Tags
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1N4448X-TP
Micro Commercial Co
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1N4148WX-TP
Micro Commercial Co
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1N4148TR
onsemi
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MMSD4148T1G
onsemi
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MMBD914LT3G
onsemi
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BAS16HT1G
onsemi
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1N914BWT
onsemi
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BAS21LT1G
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LL4148
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BAS16LT1G
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MMSD914T1G
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BAV21W-7-F
Diodes Incorporated
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