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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

NXP Semiconductors BAS21/MI,235

Name: BAS21/MI,235
Brand: NXP Semiconductors
SKU: BAS21/MI,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAS21/MI,235

Manufacturer:: NXP Semiconductors

Category:: Single Diodes

Package:: -

Datasheet:: BAS21/MI,235.pdf

Description:: BAS21 - HIGH-VOLTAGE SWITCHING D

Quantity:: RFQ Add To RFQ list

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Inventory:160,000

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Product details

Overview

BAS21/MI,235 from NXP Semiconductors is a general-purpose silicon switching diode in SOT23 package, rated for 250 V repetitive peak reverse voltage (V_RRM), 200 mA continuous forward current (I_F), and 50 ns reverse recovery time (t_rr). It serves as a fast-switching rectifier in surface-mounted power management and signal routing circuits.

For engineers reviewing the BAS21/MI,235 datasheet, BAS21/MI,235 pinout, BAS21/MI,235 application, or BAS21/MI,235 equivalent, key selection criteria include its 250 V V_RRM, 50 ns t_rr, SOT23 footprint compatibility, and low 100 nA reverse leakage at 200 V.

Technical Context

The BAS21/MI,235 is fabricated using planar epitaxial technology to achieve stable junction characteristics and fast minority-carrier recombination. Its 50 ns reverse recovery time enables reliable operation in high-frequency switching up to several MHz in clamping, protection, and logic-level translation circuits.

Thermal performance is defined by R_{th j-a} = 500 K/W on FR4 PCB, with maximum junction temperature of 150 °C and total power dissipation limited to 250 mW at 25 °C ambient. The device features a non-connected pin (Pin 2), simplifying layout while maintaining mechanical robustness in SMT assembly.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	250 V - supports input surge suppression in 12–48 V DC systems without breakdown
I_F	200 mA continuous - suitable for low-power signal routing and bias network rectification
t_rr	50 ns - enables clean switching in PWM control feedback paths and digital logic interfaces
V_F @ 100 mA	1.0 V - low forward drop minimizes conduction loss in series protection configurations
I_R @ 200 V	100 nA - ensures negligible leakage in high-impedance sensing or sample-hold circuits
C_d	5 pF @ 0 V - limits capacitive loading in RF detector and high-speed data line clamping
R_{th j-a}	500 K/W - requires thermal-aware PCB copper pour for sustained 200 mA operation above 50 °C ambient

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead package per JEDEC standard; dimensions: 2.9 × 1.3 × 1.0 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
1	Anode	Forward current entry point; connects to higher-potential node in rectification path
2	Not connected	Internally unconnected; no electrical function - must remain floating or grounded per layout rules
3	Cathode	Forward current exit point; ties to lower-potential node or ground reference

Key Features

Feature	Design Value
Fast switching speed	50 ns t_rr enables use in >1 MHz signal routing without tail current distortion
High reverse voltage rating	250 V V_RRM allows direct integration into 24 V industrial bus protection without derating
Low leakage current	100 nA I_R at 200 V supports precision analog front-end isolation
SOT23 footprint	Standardized 3-pin SMD package ensures compatibility with automated pick-and-place and reflow processes

Applications

Industrial Power Supply Protection	Digital Logic Level Translation
Use Scenario: Clamping transient spikes on 24 V DC input rails in PLC I/O modules. IC Role / Device Role / Timing Role: Fast-recovery diode providing bidirectional overvoltage protection and flyback energy recirculation. Use Value: 250 V V_RRM withstands line surges; 50 ns t_rr prevents latch-up during rapid polarity reversal.	Use Scenario: Isolating 3.3 V microcontroller GPIO from 5 V peripheral logic lines. IC Role / Device Role / Timing Role: Passive level-shifting diode in open-drain pull-up configuration. Use Value: 1.0 V V_F ensures minimal voltage offset; 5 pF C_d avoids signal edge degradation at 10 MHz clock rates.
Automotive Sensor Signal Conditioning	Consumer Device ESD Clamp
Use Scenario: Protecting Hall-effect sensor outputs against load-dump transients in 12 V automotive subsystems. IC Role / Device Role / Timing Role: Reverse-biased clamp diode shunting induced voltage spikes to ground. Use Value: 100 nA I_R preserves sensor bias accuracy; 150 °C T_j rating supports under-hood deployment.	Use Scenario: Secondary ESD protection on USB D+/D− lines in portable audio devices. IC Role / Device Role / Timing Role: Low-capacitance steering diode diverting ±8 kV HBM events to V_CC/GND rails. Use Value: 5 pF C_d maintains USB 2.0 signal integrity; SOT23 footprint fits tight board space constraints.

Industrial Power Supply Protection

Digital Logic Level Translation

Use Scenario: Clamping transient spikes on 24 V DC input rails in PLC I/O modules.

IC Role / Device Role / Timing Role: Fast-recovery diode providing bidirectional overvoltage protection and flyback energy recirculation.

Use Value: 250 V V_RRM withstands line surges; 50 ns t_rr prevents latch-up during rapid polarity reversal.

Use Scenario: Isolating 3.3 V microcontroller GPIO from 5 V peripheral logic lines.

IC Role / Device Role / Timing Role: Passive level-shifting diode in open-drain pull-up configuration.

Use Value: 1.0 V V_F ensures minimal voltage offset; 5 pF C_d avoids signal edge degradation at 10 MHz clock rates.

Automotive Sensor Signal Conditioning

Consumer Device ESD Clamp

Use Scenario: Protecting Hall-effect sensor outputs against load-dump transients in 12 V automotive subsystems.

IC Role / Device Role / Timing Role: Reverse-biased clamp diode shunting induced voltage spikes to ground.

Use Value: 100 nA I_R preserves sensor bias accuracy; 150 °C T_j rating supports under-hood deployment.

Use Scenario: Secondary ESD protection on USB D+/D− lines in portable audio devices.

IC Role / Device Role / Timing Role: Low-capacitance steering diode diverting ±8 kV HBM events to V_CC/GND rails.

Use Value: 5 pF C_d maintains USB 2.0 signal integrity; SOT23 footprint fits tight board space constraints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar general-purpose switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS1C200LT1G	V_RRM = 200 V (vs. 250 V); t_rr = 50 ns; same SOT23-3 package	Limited to ≤24 V systems requiring <200 V standoff; identical thermal profile	Select when 200 V rating suffices and second-source qualification is required
Diodes Incorporated BAV21W-7-F	V_RRM = 250 V; t_rr = 50 ns; SOD-123 package (larger footprint)	Requires PCB layout change due to different package; higher I_FSM (2 A vs. 1.7 A)	Choose for higher surge robustness where SOD-123 mounting is acceptable

Compared with NSS1C200LT1G and BAV21W-7-F, the BAS21/MI,235 uniquely combines 250 V V_RRM, 50 ns t_rr, and SOT23-3 compatibility - enabling drop-in replacement in space-constrained 24–48 V industrial designs without thermal or layout compromise.

Availability

BAS21/MI,235 is available at Aetrix Electronics and suitable for industrial power supply protection, digital logic level translation, automotive sensor signal conditioning, and consumer device ESD clamp applications requiring stable component supply and long-term manufacturing continuity.

Supply support for BAS21/MI,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The BAS21/MI,235 belongs to NXP's general-purpose discrete diode product line, engineered for cost-effective, high-reliability switching in surface-mounted power and signal conditioning circuits across industrial and automotive environments.

FAQ

What is the maximum continuous forward current rating for BAS21/MI,235?

The BAS21/MI,235 has a maximum continuous forward current (I_F) of 200 mA at 25 °C ambient temperature, derating linearly to zero at 150 °C junction temperature. This rating assumes mounting on an FR4 PCB with standard copper land patterns. Exceeding this current without thermal mitigation risks exceeding the 150 °C maximum junction temperature and accelerated degradation. The BAS21/MI,235 datasheet specifies this limit in the "Limiting Values" table on page 3.

Does BAS21/MI,235 have a pin 2 connection?

No, pin 2 of the BAS21/MI,235 is internally not connected (n.c.). As confirmed in the "PINNING" section of the NXP datasheet (page 2), pin 2 serves only a mechanical role in the SOT23 package and must remain electrically floating or tied to ground per PCB design rules - it carries no circuit function. This distinguishes the BAS21/MI,235 from dual-diode or transistor variants sharing the same outline.

What is the reverse recovery time (t_rr) specification for BAS21/MI,235?

The BAS21/MI,235 has a maximum reverse recovery time (t_rr) of 50 ns, measured under standardized conditions: switched from I_F = 30 mA to I_R = 30 mA with R_L = 100 Ω and detection at I_R = 3 mA (per Figure 8 test circuit). This value is consistent across the BAS19/BAS20/BAS21 family and is specified in the "Electrical Characteristics" table on page 4 of the NXP datasheet.

Can BAS21/MI,235 be used in automotive under-hood applications?

Yes, the BAS21/MI,235 supports automotive under-hood use with its 150 °C maximum junction temperature (T_j) and guaranteed 100 nA reverse leakage at 200 V and 150 °C (per page 4, "Electrical Characteristics"). Its planar construction and SOT23 package meet AEC-Q200 stress requirements when qualified per NXP's automotive-grade variants. Always verify qualification status via NXP's official part search before deployment.

What is the thermal resistance from junction to ambient (R_{th j-a}) for BAS21/MI,235?

The thermal resistance from junction to ambient (R_{th j-a}) for BAS21/MI,235 is 500 K/W when mounted on a standard FR4 printed-circuit board, as stated in the "Thermal Characteristics" table on page 4 of the NXP datasheet. This value assumes no additional copper pour or thermal vias; adding 1-inch² of 2-oz copper on the component side reduces R_{th j-a} significantly and improves sustained current capability.

BAS21/MI,235 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Technology:: -

Voltage - DC Reverse (Vr) (Max):: -

Current - Average Rectified (Io):: -

Voltage - Forward (Vf) (Max) @ If:: -

Speed:: -

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: -

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

Operating Temperature - Junction:: -

BAS21/MI,235 FAQ

1.How can I place an order for BAS21/MI,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS21/MI,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS21/MI,235 reliable?

The price and inventory of BAS21/MI,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21/MI,235 is usually 5 days.

3.What payment methods are accepted for BAS21/MI,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21/MI,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS21/MI,235?

BAS21/MI,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS21/MI,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS21/MI,235?

For technical support, including BAS21/MI,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21/MI,235 requirements.

6.How does Aetrix verify that BAS21/MI,235 is sourced from the original manufacturer or authorized distributors?

All BAS21/MI,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21/MI,235 meets industry standards.

7.What is the process for return or replacement of BAS21/MI,235?

All BAS21/MI,235 units undergo pre-shipment inspection (PSI). If there is an issue with BAS21/MI,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS21/MI,235 part is unused and in its original packaging.

Return procedure for BAS21/MI,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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