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Nexperia USA Inc. BAS21QBZ
- Part No.:
- BAS21QBZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAS21QBZ.pdf
- Description:
- DIODE GP 200V 250MA DFN1110D-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,955
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Product details
Overview
BAS21QBZ from Nexperia is a high-voltage switching diode in a DFN1110D-3 (SOT8015) leadless SMD package, rated for 250 V repetitive peak reverse voltage (VRRM), 250 mA forward current (IF), and 50 ns reverse recovery time (trr). It serves as a fast, low-leakage clamping or polarity protection device in automotive power management and industrial DC-DC converter front-ends.
For engineers reviewing the BAS21QBZ datasheet, BAS21QBZ pinout, BAS21QBZ application, or BAS21QBZ equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, side-wettable flank package details, thermal resistance data, and real-world switching use cases - all grounded in Nexperia's official 2020 product data sheet.
Technical Context
The BAS21QBZ is a silicon planar epitaxial high-voltage switching diode optimized for rapid turn-off with trr ≤ 50 ns under IF = IR = 30 mA, RL = 100 Ω test conditions. Its low 5 pF capacitance at 0 V and 1 MHz enables minimal signal distortion in high-frequency clamp circuits.
Designed for automotive-grade reliability, it meets AEC-Q101 stress test requirements and operates across –55 °C to +150 °C ambient, with junction temperature limited to 150 °C. Thermal resistance from junction-to-ambient is 295 K/W on standard FR4 PCB (70 µm Cu).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 250 V - supports clamping transients up to 250 V peak without breakdown |
| IF | 250 mA continuous - suitable for moderate-current switching paths in power supplies |
| trr | 50 ns - enables operation in >1 MHz switching topologies with minimal tail current loss |
| IR @ 200 V | 100 nA at 25 °C - ensures negligible leakage in high-impedance bias or sensing nodes |
| Cd | 5 pF at 0 V, 1 MHz - minimizes capacitive loading on high-speed signal lines or gate drivers |
| VF @ 200 mA | 1.25 V - limits conduction loss to ~250 mW at rated forward current |
| Rth(j-a) | 295 K/W - defines thermal rise of ~74 °C at 250 mA on standard FR4 layout |
Pinout & Package
DFN1110D-3 (SOT8015) is a 3-terminal, leadless, ultra-thin (0.48 mm body height) plastic package with side-wettable flanks for automated optical inspection (AOI) and reliable reflow soldering. Dimensions: 1.1 mm × 1.0 mm × 0.48 mm, 0.65 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (A) | Forward current entry point; connects to higher-potential node in rectifier/clamp configuration |
| 2 | Not Connected (n.c.) | Internally isolated terminal; must remain unconnected on PCB to avoid parasitic coupling |
| 3 | Cathode (K) | Forward current exit; ties to reference or return path; primary heat-sinking pad in layout |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive power modules, engine control units, and ADAS subsystems requiring discrete reliability |
| Side-wettable flanks | Enables AOI-compatible solder joint inspection without X-ray; improves process yield in high-volume SMT lines |
| 0.5 mm max package height | Supports ultra-low-profile designs in space-constrained modules such as battery management ICs and USB-C PD adapters |
| Low IR (100 nA @ 200 V) | Maintains signal integrity in precision voltage monitor circuits where leakage would skew threshold detection |
| 1.25 V VF @ 200 mA | Reduces forward conduction loss versus standard 1N4148 (VF ≈ 1.5 V), improving efficiency in flyback snubbers |
Applications
| Automotive Power Rail Protection | High-Frequency DC-DC Clamp |
|---|---|
Use Scenario: Reverse polarity protection on 12 V/24 V vehicle battery inputs to ECUs and infotainment systems. IC Role / Device Role / Timing Role: Standby-blocking diode placed between battery connector and main regulator input. Use Value: Withstands load dump spikes up to 250 V peak and maintains <100 nA leakage at cold-cranking temperatures (–40 °C), preventing standby drain. |
Use Scenario: Snubber diode across MOSFET drains in 500 kHz–1 MHz synchronous buck converters. IC Role / Device Role / Timing Role: Fast-recovery clamp limiting voltage overshoot during switch turn-off. Use Value: 50 ns trr and 5 pF capacitance minimize energy dissipation and ringing, enabling stable operation without added RC damping. |
| Voltage Clamping in Industrial PLC I/O | General-Purpose Signal-Level Switching |
Use Scenario: Transient voltage suppression on 24 V digital input channels exposed to inductive kickback from solenoids and relays. IC Role / Device Role / Timing Role: Bidirectional clamping element referenced to supply rail and ground. Use Value: 250 V VRRM rating safely absorbs 2 kV EFT bursts per IEC 61000-4-4, while low VF avoids false triggering of input comparators. |
Use Scenario: Logic-level signal steering in FPGA or microcontroller GPIO multiplexing networks. IC Role / Device Role / Timing Role: Unidirectional level translator or isolation diode in open-drain bus configurations. Use Value: 1.25 V VF and sub-50 ns switching enable clean edge propagation in 10–50 MHz clock/data routing with no measurable duty-cycle distortion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F20HT1G | VRRM = 200 V (vs. 250 V); trr = 35 ns; VF = 1.1 V @ 200 mA; same DFN1110D-3 package | Limited to lower-voltage clamping; superior speed but reduced transient margin | Select when priority is minimum trr and system transients stay below 200 V |
| Vishay ES1JHM3/84A | DO-214AC (SMA) package; VRRM = 600 V; trr = 35 ns; VF = 1.7 V @ 1 A; not AEC-Q101 qualified | Higher voltage capability but larger footprint and no automotive qualification | Choose for non-automotive 600 V surge suppression where board space is less constrained |
Compared with NSR20F20HT1G and ES1JHM3/84A, the BAS21QBZ uniquely balances 250 V robustness, AEC-Q101 compliance, and ultra-small DFN packaging - making it optimal for space-limited automotive modules requiring validated reliability and moderate voltage headroom.
Availability
BAS21QBZ is available at Aetrix Electronics and suitable for automotive ECU protection, industrial PLC I/O conditioning, and high-frequency DC-DC snubbing requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for BAS21QBZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors - high-performance diodes, MOSFETs, bipolar transistors, ESD protection, and logic devices - with manufacturing rooted in process expertise and scalable capacity.
The BAS21QBZ belongs to Nexperia's AEC-Q101-qualified high-voltage switching diode family, engineered specifically for automotive and industrial power management applications demanding fast recovery, low leakage, and compact packaging.
FAQ
Is BAS21QBZ pin-compatible with BAS21 series diodes in SOT23 packages?
No. BAS21QBZ uses the DFN1110D-3 (SOT8015) 3-terminal leadless package with pins 1 (anode), 2 (n.c.), and 3 (cathode). Standard BAS21 variants in SOT23 have different pinout (anode-cathode-anode), incompatible footprint, and no side-wettable flanks. PCB layout and stencil design must be specific to SOT8015.
What is the maximum allowable soldering temperature profile for BAS21QBZ?
Nexperia specifies peak reflow temperature of 260 °C for 30 seconds maximum, per J-STD-020. The DFN1110D-3 package requires controlled ramp rates (≤3 °C/s), preheat (150–200 °C), and soak (180–200 °C for 60–120 s) to ensure void-free solder joints on side-wettable flanks without delamination.
Does BAS21QBZ support bidirectional transient protection?
No. BAS21QBZ is a unidirectional silicon switching diode. It conducts only from anode to cathode and blocks reverse current up to 250 V. For bidirectional ESD or surge protection, a dedicated TVS diode (e.g., PESD5V0S1BA) or back-to-back diode configuration is required.
How does thermal performance change when using enhanced copper pads?
With a 1 cm² cathode-side copper pad (per datasheet condition [2]), Rth(j-a) improves from 295 K/W to 165 K/W - reducing junction temperature rise by ~44 % at 250 mA. This allows sustained operation near maximum ratings without derating, provided the pad is thermally isolated from other hot components.
BAS21QBZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 200 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN1110D-3
- Operating Temperature - Junction:
- 150°C
BAS21QBZ FAQ
1.How can I place an order for BAS21QBZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS21QBZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS21QBZ reliable?
The price and inventory of BAS21QBZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21QBZ is usually 5 days.
3.What payment methods are accepted for BAS21QBZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21QBZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS21QBZ?
BAS21QBZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS21QBZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS21QBZ?
For technical support, including BAS21QBZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21QBZ requirements.
6.How does Aetrix verify that BAS21QBZ is sourced from the original manufacturer or authorized distributors?
All BAS21QBZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21QBZ meets industry standards.
7.What is the process for return or replacement of BAS21QBZ?
All BAS21QBZ units undergo pre-shipment inspection (PSI). If there is an issue with BAS21QBZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS21QBZ part is unused and in its original packaging.
Return procedure for BAS21QBZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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