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Nexperia USA Inc. BAS21VD,135

Part No.:
BAS21VD,135
Manufacturer:
Nexperia USA Inc.
Category:
Diode Arrays
Package:
SC-74, SOT-457
Datasheet:
AetrixBAS21VD,135.pdf
Description:
DIODE ARRAY GP 200V 200MA 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:44,177

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Product details

Overview

BAS21VD from Nexperia is a triple high-voltage switching diode array in a SOT457 (TSOP6) package, designed for fast-switching, low-capacitance, high-reliability applications requiring up to 200 V reverse voltage, ≤50 ns reverse recovery time, and ≤5 pF junction capacitance. It serves as a compact, AEC-Q101-qualified solution for high-voltage signal routing and protection in automotive and telecom front-end circuits.

For engineers reviewing the BAS21VD datasheet, BAS21VD pinout, BAS21VD application, or BAS21VD equivalent, key selection criteria include verified trr ≤ 50 ns at IF = 30 mA, VR = 200 V reverse blocking capability, Cd ≤ 5 pF at f = 1 MHz, and triple-diode configuration with independent anode/cathode terminals per diode - all validated for surface-mounted automotive-grade deployment.

Technical Context

The BAS21VD integrates three independent silicon switching diodes in a single TSOP6 package, each rated for repetitive peak reverse voltage (VRRM) of 250 V and forward surge current (IFSM) up to 16 A (tp = 10 µs). Its design targets high-speed transient suppression and signal path switching where low stored charge and minimal capacitive loading are critical.

Thermal performance is defined by Rth(j-a) = 500 K/W (FR4, standard footprint) and Rth(j-sp) = 140 K/W, supporting operation up to Tj = 150 °C. The device meets AEC-Q101 stress test requirements for discrete semiconductors, confirming suitability for under-hood automotive environments.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 250 V - Maximum repetitive reverse voltage per diode without breakdown
trr 16–50 ns - Verified reverse recovery time under IF = 30 mA / IR = 30 mA test conditions
Cd 0.6–5 pF - Junction capacitance at f = 1 MHz and VR = 0 V, enabling RF-friendly signal routing
IFRM 1 A - Repetitive peak forward current at δ ≤ 25 % duty cycle, supporting pulsed power handling
VF 1.25 V max at IF = 200 mA - Low forward drop ensures minimal conduction loss in switching paths
IR 100 nA typ at VR = 200 V / Tamb = 25 °C - Ultra-low leakage preserves signal integrity in high-impedance nodes

Pinout & Package

Package: SOT457 (TSOP6), 6-lead surface-mount plastic package with 1.3 mm height, 2.5 mm width, and 3.0 mm length; optimized for automated reflow assembly on FR4 PCBs.

Pin/Terminal Circuit Role Design Meaning
1 K1 Cathode of diode 1 - referenced ground node for first switching path
2 K2 Cathode of diode 2 - isolated cathode terminal enabling independent bias control
3 K3 Cathode of diode 3 - third independent cathode for multi-rail clamping or steering
4 A3 Anode of diode 3 - high-side input for third diode path
5 A2 Anode of diode 2 - second high-side input, electrically isolated from A1/A3
6 A1 Anode of diode 1 - primary high-side input, positioned opposite K1 for optimal layout symmetry

Key Features

Feature Design Value
Triple independent diodes Three fully isolated PN junctions in one TSOP6 footprint - reduces board area vs. discrete SOD-323 solutions
AEC-Q101 qualification Validated for automotive temperature range (−65 °C to +150 °C) and mechanical stress - enables direct use in ADAS and body control modules
Low trr (≤50 ns) Minimizes switching losses and ringing in 100 kHz–1 MHz DC-DC flyback snubbers and signal clamps
Low Cd (≤5 pF) Preserves bandwidth in RF detector, antenna switch, and high-frequency data line protection circuits
High VR (200 V) Supports 48 V automotive systems and PoE+ (IEEE 802.3at) interface protection without derating

Applications

Automotive Signal Clamping Telecom Line Protection

Use Scenario: Protecting CAN FD transceiver I/O pins against load-dump transients and ESD events in vehicle infotainment gateways.

IC Role / Device Role / Timing Role: Fast clamping diode array shunting overvoltage spikes to ground before IC damage occurs.

Use Value: 250 V VRRM and 16 ns typical trr ensure sub-100 ns response to 10/1000 µs transients per ISO 7637-2.

Use Scenario: Surge suppression on Ethernet PHY differential pairs in industrial switches operating in harsh EMI environments.

IC Role / Device Role / Timing Role: High-voltage bidirectional clamp limiting common-mode voltage excursions on MDI lines.

Use Value: 5 pF typical capacitance avoids signal integrity degradation at 1000BASE-T frequencies (125 MHz).

DC-DC Converter Snubbing High-Voltage Logic Level Shifting

Use Scenario: RC snubber network across flyback transformer secondary in 48 V–12 V isolated converters for commercial vehicles.

IC Role / Device Role / Timing Role: Fast-recovery diode absorbing leakage inductance energy during MOSFET turn-off.

Use Value: 1 A IFRM and 16 A IFSM (10 µs) handle peak snubber currents without thermal runaway.

Use Scenario: Level translation between 3.3 V microcontroller GPIO and 24 V industrial sensor inputs using open-drain configuration.

IC Role / Device Role / Timing Role: High-voltage pull-up diode enabling logic-compatible voltage thresholds above 20 V.

Use Value: 200 V VR rating allows safe operation with 24 V supply rails plus 100 V transients per IEC 61000-4-4.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching diode array applications.

Alternative Part Technical Difference Application Difference Selection Advice
BAS21DW,115 Same triple-diode topology and SOT363 package; trr = 16–50 ns but Cd = 6 pF (vs. 5 pF max); VRRM = 250 V identical SOT363 has larger pad pitch (0.65 mm vs. TSOP6's 0.5 mm), easing hand-soldering but increasing PCB area Select when manual rework or legacy footprint compatibility outweighs 1 pF capacitance penalty
MBR0520L Single Schottky diode in SOD-123; VF = 0.33 V (lower), but VRRM = 20 V only and no triple configuration Not functionally equivalent - lacks multi-diode integration and high-voltage capability Only suitable for low-voltage (<24 V), low-loss forward conduction; not a replacement for BAS21VD's high-VR switching role

Compared with BAS21VD, BAS21DW,115 offers identical electrical specs in a more manufacturable package but trades 1 pF higher capacitance; MBR0520L provides lower VF but fails to meet the 200 V VR and triple-diode functional requirements entirely.

Availability

BAS21VD is available at Aetrix Electronics and suitable for automotive signal clamping, telecom line protection, and DC-DC converter snubbing requiring stable component supply, AEC-Q101 compliance, and SMT-compatible high-voltage switching performance.

Supply support for BAS21VD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors, with leadership in logic, discretes, and MOSFETs for automotive, industrial, and consumer markets.

The BAS21VD belongs to Nexperia's high-voltage switching diode product line, engineered specifically for AEC-Q101-compliant automotive signal conditioning and robust industrial interface protection where speed, voltage rating, and space efficiency are jointly critical.

FAQ

Is BAS21VD suitable for 48 V automotive battery rail protection?

Yes. With VRRM = 250 V and VR = 200 V, the BAS21VD supports full 48 V system operation including ISO 16750-2 load-dump transients (up to 60 V sustained + 100 V spikes). Its AEC-Q101 qualification confirms reliability under automotive thermal and vibration stress profiles.

Can BAS21VD replace three individual BAS21 diodes in a design?

No. While functionally equivalent per diode, the BAS21VD uses a non-standard pinout (K1/K2/K3/A3/A2/A1) that differs from the SOT23-3 BAS21. Layout redesign and netlist updates are required due to different terminal mapping and shared thermal path in the TSOP6 package.

What is the maximum continuous forward current per diode?

The datasheet specifies IF = 200 mA (pulsed, tp ≤ 300 µs, δ ≤ 0.02) and Ptot = 295 mW at Tamb ≤ 25 °C. Continuous DC current is limited by thermal dissipation; at 25 °C ambient, ~120 mA per diode is sustainable assuming one diode active and standard FR4 mounting.

Does BAS21VD support wave soldering?

Yes. Nexperia provides dedicated wave soldering footprints (Fig. 10) for TSOP6, specifying 1.45 mm solder land width, 0.45 mm resist opening, and preferred transport direction. Peak temperature must stay below 260 °C for ≤5 s to avoid package delamination or bond wire damage.

BAS21VD,135 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
3 Independent
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
200 V
Current - Average Rectified (Io) (per Diode):
200mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 200 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
100 nA @ 200 V
Operating Temperature - Junction:
150°C (Max)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

BAS21VD,135 FAQ

1.How can I place an order for BAS21VD,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS21VD,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS21VD,135 reliable?

The price and inventory of BAS21VD,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21VD,135 is usually 5 days.

3.What payment methods are accepted for BAS21VD,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21VD,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS21VD,135?

BAS21VD,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS21VD,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS21VD,135?

For technical support, including BAS21VD,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21VD,135 requirements.

6.How does Aetrix verify that BAS21VD,135 is sourced from the original manufacturer or authorized distributors?

All BAS21VD,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21VD,135 meets industry standards.

7.What is the process for return or replacement of BAS21VD,135?

All BAS21VD,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAS21VD,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS21VD,135 part is unused and in its original packaging.

Return procedure for BAS21VD,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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