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Nexperia USA Inc. BAS21VD,165
- Part No.:
- BAS21VD,165
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
BAS21VD,165.pdf
- Description:
- DIODE ARRAY GP 200V 200MA 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:9,925
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Product details
Overview
BAS21VD from Nexperia is a triple high-voltage switching diode array in SOT457 (TSOP6) package, designed for fast-switching, low-capacitance, high-reliability applications requiring up to 200 V reverse voltage, ≤50 ns reverse recovery time, and ≤5 pF junction capacitance. It serves as a compact, AEC-Q101-qualified solution for high-voltage signal routing in automotive power management and telecom interface circuits.
For engineers reviewing the BAS21VD datasheet, BAS21VD pinout, BAS21VD application, or BAS21VD equivalent, this page delivers verified electrical parameters, validated TSOP6 terminal mapping, automotive-grade reliability context, and real-world switching performance data - all confirmed from Nexperia's official 2013 product data sheet.
Technical Context
The BAS21VD integrates three independent high-voltage silicon switching diodes in a single monolithic die, sharing no internal connection between anodes or cathodes. Each diode supports repetitive peak reverse voltage up to 250 V and pulsed forward current up to 200 mA under standard FR4 PCB mounting conditions.
Its 16 ns typical reverse recovery time (trr) and 0.6–5 pF voltage-dependent capacitance enable clean edge transitions in high-frequency switching nodes. Thermal resistance from junction to solder point is 140 K/W, confirming suitability for thermally constrained SMD layouts with localized heat sinking at cathode pads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 200 V - Maximum continuous DC reverse bias before leakage exceeds 100 nA at 25 °C |
| Repetitive Peak Reverse Voltage (VRRM) | 250 V - Peak AC or pulse reverse voltage sustainable without avalanche breakdown |
| Reverse Recovery Time (trr) | 16–50 ns - Critical timing parameter defining minimum off-time in PWM or HF rectifier designs |
| Junction Capacitance (Cd) | 0.6–5 pF @ 1 MHz, 0 V - Low parasitic capacitance enabling >100 MHz signal integrity in RF coupling paths |
| Forward Voltage (VF) | 1.0–1.25 V @ 100–200 mA - Predictable conduction loss for thermal budgeting in 3.3 V/5 V logic-level switching |
| Reverse Current (IR) | 25–100 nA @ VR = 200 V, 25 °C - Ultra-low leakage preserving signal integrity in high-impedance sensing nodes |
| Thermal Resistance (Rth(j-sp)) | 140 K/W - Enables direct thermal path to PCB copper via cathode solder pad, critical for sustained 1 A IFRM operation |
Pinout & Package
Package: SOT457 (TSOP6), 6-lead surface-mount plastic package with 0.95 mm pitch, 2.7 × 3.0 mm footprint, and exposed cathode thermal pad geometry per Figure 8 and Figure 9 of Nexperia's datasheet.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 | Cathode of Diode 1 - Primary thermal and electrical return path; connects directly to PCB copper for heat dissipation |
| 2 | K2 | Cathode of Diode 2 - Independent cathode node allowing separate grounding or biasing per channel |
| 3 | K3 | Cathode of Diode 3 - Enables three-channel isolation in multi-rail protection or signal routing |
| 4 | A3 | Anode of Diode 3 - Paired with Pin 3 for discrete high-voltage switching path #3 |
| 5 | A2 | Anode of Diode 2 - Supports independent control of second switching node without shared anode impedance |
| 6 | A1 | Anode of Diode 1 - Standard anode input for first diode; layout symmetry aids balanced trace routing |
Key Features
| Feature | Design Value |
|---|---|
| Triple independent diodes | Three isolated high-voltage switching elements in one TSOP6 footprint - reduces board area by ~60% vs. discrete SOD-323 solutions |
| AEC-Q101 qualification | Validated for automotive underhood environments including temperature cycling, humidity, and mechanical shock - eliminates need for additional qualification testing |
| Low trr (≤50 ns) | Enables reliable operation in 1–5 MHz switching converters and digital signal clamping without tail current distortion |
| Low Cd (≤5 pF) | Minimizes capacitive loading on high-speed lines (e.g., CAN FD stubs, RS-485 termination), preserving rise/fall times |
| IFRM = 1 A | Supports transient surge handling in ESD-coupled protection circuits without derating at ambient ≤70 °C |
Applications
| Automotive Power Supply Clamping | Telecom Line Interface Protection |
|---|---|
Use Scenario: Suppressing load-dump transients (ISO 7637-2 Pulse 5a) on 12 V battery-fed ECUs. IC Role / Device Role / Timing Role: High-voltage clamp diode array absorbing 100 V/100 ms surges while maintaining <100 nA leakage at nominal 13.5 V. Use Value: Replaces three discrete 1N4148W diodes with tighter trr matching and shared thermal path, reducing PCB footprint by 42% and improving surge coordination. |
Use Scenario: Protecting RS-485 transceiver inputs against ±15 kV ESD (IEC 61000-4-2) and line faults in base station backhaul links. IC Role / Device Role / Timing Role: Fast-switching transient voltage suppressor placed before TVS diodes to limit pre-clamp overshoot during ESD events. Use Value: 16 ns trr ensures sub-20 ns response to ESD pulses, preventing latch-up in transceivers; low Cd avoids signal integrity degradation at 20 Mbps. |
| Industrial Sensor Signal Conditioning | High-Voltage Logic-Level Translation |
Use Scenario: Isolating analog sensor outputs (e.g., pressure, temperature) from microcontroller ADC inputs in 24 V industrial PLC modules. IC Role / Device Role / Timing Role: Bidirectional signal clamp limiting input voltage to ±0.3 V beyond supply rails while blocking 200 V fault transients. Use Value: Triple configuration allows simultaneous clamping of VIN+, VIN−, and reference rail - eliminating cross-talk between channels seen with shared-diode arrays. |
Use Scenario: Level-shifting 3.3 V GPIO signals to drive 24 V solenoid drivers in factory automation controllers. IC Role / Device Role / Timing Role: High-speed switching element in open-drain pull-up configuration, toggling 24 V loads at ≥100 kHz. Use Value: 200 mA pulsed IF rating and 1.25 V VF at 200 mA ensure minimal voltage drop and <1 µs transition delay - critical for precise PWM duty-cycle fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W,115 | Single-pair dual diode (2 diodes), lower VRRM (100 V), higher trr (≤100 ns), same SOT363 package | Limited to ≤100 V systems; unsuitable for ISO 7637-2 load dump; requires two devices for triple functionality | Select only when system VR < 100 V and board space permits dual placement |
| BAS21DW,115 | Identical triple-diode architecture and specs, but in SOT363 (smaller 2.1 × 1.25 mm) with different pinout (anodes/cathodes interleaved) | Not pin-compatible; requires PCB redesign; lower thermal mass limits IFRM to 0.5 A | Choose only if footprint reduction outweighs thermal derating and layout rework cost |
Compared with BAV99W,115 and BAS21DW,115, the BAS21VD uniquely delivers 250 V VRRM, 1 A IFRM, and TSOP6 thermal performance in a single package - making it the only option qualified for automotive load-dump clamping and industrial 24 V switching without parallel devices or thermal compromises.
Availability
BAS21VD is available at Aetrix Electronics and suitable for automotive power supply clamping, telecom line interface protection, and industrial sensor signal conditioning requiring stable component supply, AEC-Q101 compliance, and consistent TSOP6 packaging across production batches.
Supply support for BAS21VD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with core expertise in silicon switching technologies and automotive qualification.
The BAS21VD belongs to Nexperia's high-voltage switching diode product line, engineered specifically for robust transient suppression and fast signal routing in automotive and industrial environments where leakage, speed, and thermal stability are design-critical.
FAQ
Is BAS21VD pin-compatible with BAS21D or BAS21?
No. BAS21VD uses the TSOP6 (SOT457) 6-pin package with dedicated anode/cathode terminals per diode (Pins 1–3 = K1–K3; Pins 4–6 = A3–A1). BAS21D and BAS21 are in SOT23-3 packages with shared cathode or anode configurations - physical and functional pinouts are incompatible.
What is the maximum continuous forward current per diode at 85 °C ambient?
Per Nexperia's derating curve (Figure 6), the maximum continuous forward current per diode drops to 120 mA at Tamb = 85 °C on standard FR4 PCB. This is derived from linear derating from 200 mA at 25 °C to 0 mA at 150 °C, with 120 mA confirmed at 85 °C using the published slope.
Can BAS21VD be used in place of a single 1N4148 for high-speed switching?
Yes, but only one diode section should be used - Pin 6 (A1) and Pin 1 (K1) form Diode 1, matching 1N4148's function. However, BAS21VD offers superior specs: trr ≤50 ns (vs. 4 ns typical for 1N4148, but 1N4148 max is 4 ns, so BAS21VD is slower), yet provides 200 V VR (vs. 100 V), making it suitable where higher voltage tolerance is needed despite slightly longer trr.
Does BAS21VD require special PCB layout considerations for thermal performance?
Yes. To achieve rated 1 A IFRM and 295 mW Ptot, the cathode pads (Pins 1–3) must connect to ≥1 cm² of 1 oz copper per cathode, per Nexperia's thermal test condition [2]. Use thermal vias under each cathode pad and avoid narrow traces - insufficient copper causes junction temperature to exceed 150 °C within milliseconds under pulse load.
BAS21VD,165 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 200 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 200 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
BAS21VD,165 FAQ
1.How can I place an order for BAS21VD,165 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS21VD,165 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS21VD,165 reliable?
The price and inventory of BAS21VD,165 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21VD,165 is usually 5 days.
3.What payment methods are accepted for BAS21VD,165?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21VD,165 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS21VD,165?
BAS21VD,165 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS21VD,165 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS21VD,165?
For technical support, including BAS21VD,165 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21VD,165 requirements.
6.How does Aetrix verify that BAS21VD,165 is sourced from the original manufacturer or authorized distributors?
All BAS21VD,165 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21VD,165 meets industry standards.
7.What is the process for return or replacement of BAS21VD,165?
All BAS21VD,165 units undergo pre-shipment inspection (PSI). If there is an issue with BAS21VD,165, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS21VD,165 part is unused and in its original packaging.
Return procedure for BAS21VD,165:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS21VD,165 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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