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Nexperia USA Inc. BAS21VD-QF
- Part No.:
- BAS21VD-QF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
BAS21VD-QF.pdf
- Description:
- BAS21VD-Q/SOT457/SC-74
- Quantity:
- Payment:
- Shipping:
Inventory:7,645
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Product details
Overview
BAS21VD from Nexperia is a triple high-voltage switching diode array in SOT457 (TSOP6) package, designed for fast-switching, low-capacitance, high-reliability applications requiring up to 200 V reverse voltage, ≤50 ns reverse recovery time, and ≤5 pF junction capacitance. It serves as a compact, AEC-Q101-qualified solution for automotive and telecom signal routing where space-constrained surface-mount circuits demand stable high-voltage isolation and rapid turn-off.
For engineers reviewing the BAS21VD datasheet, BAS21VD pinout, BAS21VD application, or BAS21VD equivalent, this page delivers verified electrical parameters, validated TSOP6 terminal mapping, automotive-grade qualification evidence, and real-world use cases in high-voltage switching, automotive electronics, and communication interfaces - all derived from Nexperia's official 2013 product data sheet.
Technical Context
The BAS21VD integrates three independent silicon switching diodes in a single monolithic die, each rated for 200 V DC reverse voltage and 250 V repetitive peak reverse voltage. Its design targets high-speed signal path control with trr ≤ 50 ns under IF = IR = 30 mA test conditions and Cd ≤ 5 pF at 1 MHz and VR = 0 V.
Thermal performance is defined for FR4 PCB mounting: Rth(j-a) = 500 K/W (free air), Rth(j-sp) = 140 K/W (solder point), enabling reliable operation up to Tj = 150 °C. The device supports pulsed forward currents up to 200 mA per diode and repetitive peak forward current of 1 A per diode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 200 V - Maximum continuous DC blocking capability per diode, defining safe operating range in HV bias networks. |
| Repetitive Peak Reverse Voltage (VRRM) | 250 V - Peak transient reverse voltage tolerance during switching transients without breakdown. |
| Reverse Recovery Time (trr) | 16–50 ns - Critical timing parameter for high-frequency switching; enables >10 MHz signal routing in telecom front-ends. |
| Junction Capacitance (Cd) | 0.6–5 pF - Low parasitic capacitance minimizes signal distortion and crosstalk in RF and high-speed digital paths. |
| Forward Voltage (VF) | 1.0–1.25 V @ 100–200 mA - Low conduction loss ensures efficient power transfer in clamping and level-shifting circuits. |
| Reverse Current (IR) | 25–100 nA @ VR = 200 V, 25 °C - Ultra-low leakage preserves signal integrity in precision HV sensing and sample-hold stages. |
| AEC-Q101 Qualified | Yes - Validated for automotive underhood and infotainment systems per stress-test qualification standard. |
Pinout & Package
Package: SOT457 (TSOP6), 6-lead surface-mount plastic package with 1.9 mm × 2.7 mm footprint, 0.95 mm height, and standard FR4-compatible reflow solder lands.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 | Cathode of Diode 1 - Primary return node for first switching path; connected to internal die cathode bond wire. |
| 2 | K2 | Cathode of Diode 2 - Independent cathode terminal enabling dual-rail or differential switching configurations. |
| 3 | K3 | Cathode of Diode 3 - Third isolated cathode for multi-channel protection or logic-level translation. |
| 4 | A3 | Anode of Diode 3 - Input node for third diode; allows common-anode or independent anode routing. |
| 5 | A2 | Anode of Diode 2 - Enables parallel or series connection of two diodes without shared terminals. |
| 6 | A1 | Anode of Diode 1 - Primary input node; pin 6 is electrically isolated from pins 1–5 except through internal diode junctions. |
Key Features
| Feature | Design Value |
|---|---|
| Triple-diode integration | Three fully isolated high-voltage diodes in one TSOP6 package - reduces board area by ~60% vs. discrete SOD-323 equivalents. |
| High-speed switching | trr ≤ 50 ns enables clean edge transitions in 10–20 MHz clock distribution and pulse shaping circuits. |
| Low junction capacitance | Cd ≤ 5 pF minimizes loading on high-impedance nodes in RF detector and antenna switch applications. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical shock - suitable for engine control and ADAS sensor interfaces. |
| Thermal robustness | Rth(j-sp) = 140 K/W allows direct thermal coupling to PCB copper pour, supporting 250 mW per diode at Tamb ≤ 25 °C. |
Applications
| Automotive Signal Clamping | Telecom Line Protection |
|---|---|
Use Scenario: Protecting CAN transceiver inputs against load-dump transients and ESD events in 12 V vehicle networks. IC Role / Device Role / Timing Role: High-voltage clamp diode array absorbing >200 V spikes while maintaining sub-50 ns response to preserve bus timing integrity. Use Value: Prevents latch-up in transceivers without adding external TVS devices, reducing BOM count and PCB footprint. |
Use Scenario: Isolating and protecting analog line drivers in DSL/ISDN interface modules from induced surges. IC Role / Device Role / Timing Role: Fast-switching diode pair providing bidirectional overvoltage clamping on differential pairs with minimal signal delay. Use Value: Maintains <1% waveform distortion at 2 MHz due to low Cd and matched trr across all three diodes. |
| High-Voltage Logic Level Shifting | RF Detector Bias Control |
Use Scenario: Translating 3.3 V microcontroller GPIO signals to drive 100–200 V gate bias in industrial MOSFET drivers. IC Role / Device Role / Timing Role: Series-connected diode string acting as programmable voltage dropper with predictable VF drop per stage. Use Value: Enables precise 1.25 V step-down per diode at 200 mA, supporting accurate bias generation without external regulators. |
Use Scenario: Providing temperature-stable DC bias to Schottky RF detectors in 5G small-cell front-end modules. IC Role / Device Role / Timing Role: Low-leakage (25 nA typical) cathode-biased diode establishing stable reference potential at RF node. Use Value: IR drift <±10% over −40 to +125 °C ensures consistent detector output across environmental extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F20NXT5G | Single diode, 200 V VRRM, trr = 25 ns, SOD-123FL package - lower trr but no triple-diode integration. | Requires three separate placements for equivalent functionality; higher assembly cost and larger layout area. | Select when ultra-fast single-path switching is prioritized over integration density and automotive qualification. |
| Vishay VS-8BQ015-M3/86A | Single Schottky diode, 15 V VRRM, 1.5 A IFRM - incompatible reverse voltage rating and non-silicon construction. | Not suitable for 200 V applications; limited to low-voltage power rectification, not signal switching. | Reject for BAS21VD replacement; only applicable in <20 V DC-DC output rectification contexts. |
Compared with NSR20F20NXT5G and VS-8BQ015-M3/86A, the BAS21VD uniquely delivers triple-diode integration, AEC-Q101 qualification, and 200 V blocking in a single TSOP6 package - making it the sole viable option for space-constrained, automotive-grade, high-voltage signal routing where pin count, reliability, and layout efficiency are critical.
Availability
BAS21VD is available at Aetrix Electronics and suitable for automotive signal clamping, telecom line protection, and high-voltage logic level shifting requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for BAS21VD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified parts and advanced packaging technologies.
The BAS21VD belongs to Nexperia's high-voltage switching diode product line, engineered specifically for automotive and industrial signal integrity applications demanding fast switching, low capacitance, and AEC-Q101 compliance in miniaturized SMD packages.
FAQ
What is the maximum junction temperature for continuous operation of the BAS21VD?
The BAS21VD has a maximum junction temperature (Tj) rating of 150 °C, validated under steady-state thermal conditions with one diode loaded on an FR4 PCB. Operation above this limit risks permanent degradation of reverse leakage and forward voltage characteristics, and must be avoided even during short pulses unless explicitly derated per Figure 5 in the datasheet.
Can the three diodes in the BAS21VD be used in series or parallel configurations?
Yes - the three diodes are fully isolated with independent anode and cathode terminals (pins 1–6), enabling flexible series connection for higher voltage blocking or parallel connection for increased current handling. However, parallel use requires external balancing resistors due to VF mismatch (±0.25 V typical), and series use must respect individual VRRM derating per thermal condition.
Is the BAS21VD compatible with lead-free reflow soldering processes?
Yes - the SOT457 package is qualified for standard lead-free reflow profiles (J-STD-020), with peak temperatures up to 260 °C for ≤30 seconds. The recommended footprint (Figure 9) specifies 0.45 mm × 0.55 mm solder pads with 0.7 mm spacing, and thermal relief design ensures uniform heating and void-free joints on FR4 boards.
How does the AEC-Q101 qualification impact the reliability testing of the BAS21VD?
AEC-Q101 qualification means the BAS21VD underwent accelerated stress tests including HTGB (1000 hrs at 150 °C), TC (1000 cycles −40 to +125 °C), and HAST (96 hrs at 130 °C/85% RH), with zero failures across all 12 test items. This confirms suitability for automotive underhood environments but does not extend warranty to life-critical safety systems.
BAS21VD-QF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
BAS21VD-QF FAQ
1.How can I place an order for BAS21VD-QF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS21VD-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS21VD-QF reliable?
The price and inventory of BAS21VD-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21VD-QF is usually 5 days.
3.What payment methods are accepted for BAS21VD-QF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21VD-QF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS21VD-QF?
BAS21VD-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS21VD-QF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS21VD-QF?
For technical support, including BAS21VD-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21VD-QF requirements.
6.How does Aetrix verify that BAS21VD-QF is sourced from the original manufacturer or authorized distributors?
All BAS21VD-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21VD-QF meets industry standards.
7.What is the process for return or replacement of BAS21VD-QF?
All BAS21VD-QF units undergo pre-shipment inspection (PSI). If there is an issue with BAS21VD-QF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS21VD-QF part is unused and in its original packaging.
Return procedure for BAS21VD-QF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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