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Taiwan Semiconductor Corporation BAS21W RVG
- Part No.:
- BAS21W RVG
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS21W RVG.pdf
- Description:
- DIODE GEN PURP 250V 200MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:45,000
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Product details
Overview
BAS21W RVG from Taiwan Semiconductor is a surface-mount small-signal switching diode in SOT-323 package, rated for 250 V peak repetitive reverse voltage, 200 mA average rectified current, and 625 mW power dissipation, used in general-purpose DC blocking and high-speed switching applications such as signal routing in consumer power supplies.
For engineers reviewing the BAS21W RVG datasheet, BAS21W RVG pinout, BAS21W RVG application, or BAS21W RVG equivalent, key selection criteria include reverse recovery time (trr = 50 ns), forward voltage at 30 mA (VF = 1.25 V), junction-to-ambient thermal resistance (RθJA = 200 °C/W), moisture sensitivity level (MSL 1), and RoHS-compliant green compound construction.
Technical Context
The BAS21W RVG operates as a unidirectional silicon switching diode with fast recovery characteristics enabled by optimized doping and junction design. It supports DC blocking and signal-level switching up to 100 MHz due to low diode capacitance (CD = 4 pF at VR = 0 V) and controlled minority-carrier lifetime.
Its thermal performance is defined by a 200 °C/W junction-to-ambient thermal resistance under standard PCB mounting conditions, and it maintains stable operation across –55°C to +150°C junction temperature range, with MSL 1 handling enabling reflow compatibility without dry-pack requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 250 V - Maximum repetitive reverse voltage before breakdown; defines safe DC blocking margin in power supply snubbers. |
| IO(AV) | 200 mA - Average forward current rating; sets continuous switching capability in low-power signal paths. |
| trr | 50 ns - Reverse recovery time at IF = IR = 30 mA, Irr = 0.1×IR; enables use in 1–5 MHz switching circuits. |
| VF @ 30 mA | 1.25 V - Forward voltage drop; determines conduction loss and self-heating in series-switched logic interfaces. |
| RθJA | 200 °C/W - Thermal resistance; requires ≥ 25 mm² copper pad for full 625 mW derating at TA = 25°C. |
| CD @ 0 V | 4 pF - Junction capacitance at zero bias; limits high-frequency signal coupling in RF detector and mixer bias networks. |
Pinout & Package
SOT-323 package: 3-pin plastic surface-mount case with gull-wing leads; dimensions per JEDEC TO-236AB (2.2 × 1.35 × 0.9 mm); moisture sensitivity level 1; weight ≈ 5 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to higher-potential node in series-switching configuration; polarity-sensitive for DC blocking. |
| Cathode (Pin 2) | Forward current exit / reverse voltage terminal | Marked with cathode band on package; ties to ground or lower-potential rail in clamp and protection circuits. |
| Case / Pin 3 | Non-connected internal die attach pad | Electrically isolated; serves mechanical anchoring only-no circuit connection required or recommended. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | 50 ns reverse recovery time enables clean edge transitions in 1–5 MHz clock distribution and pulse shaping. |
| Pb-free & RoHS compliant | Green compound construction meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260°C/10s. |
| MSL 1 rating | No dry-pack or bake-out required prior to assembly; supports unlimited floor life under standard humidity conditions. |
| Low junction capacitance | 4 pF at 0 V allows minimal signal distortion in RF detector inputs and high-frequency sample-and-hold bias paths. |
Applications
| Power Supply Snubber Circuit | Signal-Level Polarity Protection |
|---|---|
Use Scenario: Suppresses voltage spikes across switching MOSFETs in offline AC-DC flyback converters operating at 65–130 kHz. IC Role / Device Role: Fast-recovery clamping diode in RCD snubber network. Use Value: 250 V VRRM withstands reflected primary-side transients; 50 ns trr ensures minimal energy loss during each switching cycle. | Use Scenario: Prevents damage from reversed battery insertion in portable USB-C peripherals and IoT sensor nodes. IC Role / Device Role: Series-blocking diode on VBUS line upstream of LDO or charging IC. Use Value: 200 mA IO(AV) supports typical 100–150 mA load currents; 1.25 V VF minimizes dropout in low-voltage 3.3 V systems. |
| RF Detector Bias Network | Digital Logic Level Shifting |
Use Scenario: Provides DC bias isolation in 900 MHz ISM-band envelope detector front-ends using Schottky diodes. IC Role / Device Role: Low-capacitance blocking element between RF path and bias supply rail. Use Value: 4 pF CD prevents RF leakage into bias source; MSL 1 simplifies automated placement in high-volume RF module assembly. | Use Scenario: Isolates 5 V microcontroller GPIO from 3.3 V peripheral I/O in industrial HMI panels with mixed-voltage domains. IC Role / Device Role: Unidirectional level translator via passive diode drop. Use Value: Consistent 1.25 V VF enables predictable 1.7 V logic-high threshold; SOT-323 footprint fits tight 0.5 mm pitch layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS1C200MZ4T1G | VRRM = 200 V (lower), trr = 4 ns (faster), VF = 1.1 V @ 100 mA | Better for <5 MHz high-efficiency DC-DC sync rectification; insufficient for 250 V snubbers | Select when speed > voltage rating; verify layout clearance for 200 V max. |
| Diodes Incorporated BAV21W-7-F | VRRM = 250 V (same), trr = 50 ns (same), VF = 1.25 V @ 30 mA (same), RθJA = 225 °C/W (worse) | Same functional envelope but higher thermal resistance limits power handling on minimal copper | Acceptable for low-duty-cycle signal switching; avoid in sustained 200 mA applications without enhanced cooling. |
Compared with NSS1C200MZ4T1G and BAV21W-7-F, the BAS21W RVG uniquely balances 250 V robustness, 50 ns recovery, and MSL 1 manufacturability-making it optimal for cost-sensitive, medium-frequency power and signal switching where voltage margin and assembly simplicity are prioritized over ultrafast timing.
Availability
BAS21W RVG is available at Aetrix Electronics and suitable for power supply snubbers, battery polarity protection circuits, RF detector bias networks, and digital level-shifting interfaces requiring stable component supply and consistent SOT-323 form factor.
Supply support for BAS21W RVG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in high-reliability small-signal devices and power components.
The BAS19W/20W/21W family targets general-purpose switching applications demanding proven reliability, tight parameter consistency, and seamless SMT integration-especially in cost-optimized consumer, industrial, and computing power subsystems.
FAQ
What is the maximum junction temperature rating for the BAS21W RVG?
The BAS21W RVG has a maximum junction temperature (TJ) rating of +150°C, verified per DS_S1405006 Rev B14. This allows reliable operation in enclosed power supply enclosures and automotive under-hood ambient environments up to +105°C, provided thermal design maintains junction temperature below this limit. Derating begins at +25°C ambient per the 625 mW → 0 mW linear curve in Figure 3.
Does the BAS21W RVG have a specified reverse recovery time, and under what test conditions?
Yes, the BAS21W RVG specifies a reverse recovery time (trr) of 50 ns, measured at IF = IR = 30 mA with Irr = 0.1 × IR, per DS_S1405006. This value is confirmed for the entire BAS19W/20W/21W family and applies directly to BAS21W RVG. It reflects performance under standardized switching conditions relevant to 1–5 MHz applications.
Is the BAS21W RVG pin-compatible with other diodes in the BAS19W/20W/21W series?
Yes, the BAS21W RVG shares identical SOT-323 pinout, mechanical outline, and terminal configuration with BAS19W and BAS20W. All three variants use Anode–Cathode–Case pin assignment and identical package dimensions, enabling direct substitution in existing layouts when voltage and current ratings align with design requirements.
What does the "RVG" suffix indicate in BAS21W RVG?
The "RVG" suffix in BAS21W RVG denotes Taiwan Semiconductor's standard marking code: "RV" identifies the manufacturing site and process control, while "G" confirms green (Pb-free, RoHS-compliant) compound material. This matches ordering information in DS_S1405006 and confirms compliance with environmental directives without requiring special handling.
Can the BAS21W RVG be used in high-frequency RF applications above 100 MHz?
The BAS21W RVG exhibits 4 pF junction capacitance at 0 V, supporting limited use up to ~100 MHz in low-power RF detector and mixer bias networks. However, its 50 ns trr and lack of specified S-parameters beyond 10 MHz mean it is not characterized or recommended for fundamental RF switching above 100 MHz-designers should verify impedance matching and transient response empirically for such cases.
BAS21W RVG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 250 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 250 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
- Operating Temperature - Junction:
- -55°C ~ 150°C
BAS21W RVG FAQ
1.How can I place an order for BAS21W RVG through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS21W RVG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS21W RVG reliable?
The price and inventory of BAS21W RVG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS21W RVG is usually 5 days.
3.What payment methods are accepted for BAS21W RVG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS21W RVG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS21W RVG?
BAS21W RVG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS21W RVG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS21W RVG?
For technical support, including BAS21W RVG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS21W RVG requirements.
6.How does Aetrix verify that BAS21W RVG is sourced from the original manufacturer or authorized distributors?
All BAS21W RVG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS21W RVG meets industry standards.
7.What is the process for return or replacement of BAS21W RVG?
All BAS21W RVG units undergo pre-shipment inspection (PSI). If there is an issue with BAS21W RVG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS21W RVG part is unused and in its original packaging.
Return procedure for BAS21W RVG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS21W RVG Tags
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