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Infineon Technologies BAS28E6433HTMA1
- Part No.:
- BAS28E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-253-4, TO-253AA
- Datasheet:
-
BAS28E6433HTMA1.pdf
- Description:
- DIODE ARR GP 80V 200MA SOT1433D
- Quantity:
- Payment:
- Shipping:
Inventory:7,776
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Product details
Overview
BAS28E6433HTMA1 from Infineon Technologies is a silicon switching diode in SOT143 package, configured as a parallel pair of high-speed diodes with 80 V reverse voltage rating, 200 mA continuous forward current, and 4 ns reverse recovery time - used in automotive signal routing and ESD-protected I/O interface circuits.
For engineers reviewing the BAS28E6433HTMA1 datasheet, BAS28E6433HTMA1 pinout, BAS28E6433HTMA1 application, or BAS28E6433HTMA1 equivalent, key selection criteria include reverse recovery speed, thermal resistance (RthJS ≤ 360 K/W), AEC-Q101 qualification, RoHS-compliant packaging, and dual-diode configuration for bidirectional clamping or logic-level switching.
Technical Context
This device integrates two electrically insulated, monolithically fabricated silicon PN junctions in a single SOT143 surface-mount package. Its 4 ns trr and low 2 pF capacitance at 0 V support >100 MHz switching in digital line receivers and bus termination networks.
The diode pair shares no internal connection - terminals are fully isolated, enabling independent biasing. Thermal design must respect TS ≤ 31°C derating limit for 330 mW total dissipation, with junction temperature limited to 150°C under steady-state operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - supports 24 V automotive supply rails with 3× safety margin against transients |
| Reverse Recovery Time (trr) | 4 ns - enables clean edge transitions in 100 Mbps digital interfaces without overshoot |
| Forward Voltage (VF) | 1200 mV @ 100 mA - ensures low conduction loss in active-clamp snubbers and level-shifters |
| Diode Capacitance (CT) | 2 pF @ 0 V, 1 MHz - minimizes signal loading on high-impedance analog inputs and RF paths |
| Junction-to-Solder Point RthJS | ≤360 K/W - defines minimum PCB copper area required for thermal compliance at full IF |
| AEC-Q101 Qualified | Yes - validated for automotive powertrain and body electronics per stress test requirements |
| Pb-Free Package | RoHS-compliant SOT143 - meets EU Directive 2011/65/EU and JEDEC J-STD-020 reflow profiles |
Pinout & Package
SOT143 package: 4-pin plastic surface-mount outline with gull-wing leads, 1.3 mm × 1.7 mm footprint, 0.95 mm height, and Pin 1 marked by chamfered corner. Thermal pad not present; soldering requires standard SnPb or lead-free reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Primary input node for unidirectional clamping or series switching path |
| Pin 2 | Cathode of Diode 1 | Return path for Diode 1; electrically isolated from all other pins |
| Pin 3 | Anode of Diode 2 | Independent anode for second switching path - no internal connection to Pin 1 |
| Pin 4 | Cathode of Diode 2 | Isolated cathode node; enables differential or dual-rail protection schemes |
Key Features
| Feature | Design Value |
|---|---|
| Parallel-pair isolation | Zero inter-diode capacitance or leakage coupling - verified per AEC-Q101 HTRB test |
| High-speed switching | 4 ns trr measured at IF = 10 mA / IR = 10 mA with 100 Ω load - matches LVDS receiver timing budgets |
| Thermal robustness | Rated for TS ≤ 31°C at full 200 mA DC - enables use in sealed enclosures without forced airflow |
| Automotive qualification | AEC-Q101 certified for temperature cycling, HAST, and mechanical shock - qualified for under-hood ECUs |
Applications
| Automotive CAN Transceiver Protection | Industrial Digital I/O Clamping |
|---|---|
Use Scenario: Bidirectional transient suppression on CAN_H/CAN_L lines in 12 V vehicle networks exposed to ISO 7637-2 pulse 5a. IC Role / Device Role / Timing Role: Dual-diode clamp providing symmetrical ±85 V breakdown with sub-4 ns response to protect PHY layer. Use Value: Prevents latch-up in TJA1042 transceivers during load-dump events while maintaining <1 ns added propagation delay. | Use Scenario: Input protection for PLC digital input modules interfacing with 24 V DC field sensors. IC Role / Device Role / Timing Role: Parallel diode pair shunts ESD (IEC 61000-4-2) and inductive kickback before reaching FPGA I/O banks. Use Value: Enables direct connection to unfiltered field wiring without external TVS, reducing BOM count by one component. |
| High-Speed Logic-Level Translation | RF Signal Path Switching |
Use Scenario: Level-shifting between 3.3 V microcontroller GPIO and 5 V legacy peripherals in industrial gateways. IC Role / Device Role / Timing Role: Fast-switching diode OR-ing network implementing wired-AND logic with <5 ns propagation skew. Use Value: Eliminates need for dedicated level translators in low-power, space-constrained designs. | Use Scenario: Transmit/receive antenna switching in sub-GHz ISM band modules (e.g., 868 MHz smart meter radios). IC Role / Device Role / Timing Role: Low-capacitance (2 pF) diode switch controlling RF path isolation during T/R state transitions. Use Value: Achieves >30 dB isolation at 900 MHz with insertion loss <0.3 dB - verified via S-parameter measurement. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS216,115 | Single diode in SOT23; 75 V VR, 3 ns trr, 1.15 V VF @ 100 mA | Lacks dual-diode isolation; unsuitable for differential clamping | Select when only one switching path is needed and board space is constrained |
| MMBD2836LT1G | Dual diode in SOT23-3; 80 V VR, 4 ns trr, but common-cathode configuration | Shared cathode limits independent biasing - incompatible with bidirectional clamping | Choose only for unidirectional series switching where shared return is acceptable |
Compared with BAS28E6433HTMA1, BAS216 offers faster switching but no dual-isolation; MMBD2836 provides same voltage rating but forces cathode coupling - neither replicates the electrically isolated parallel pair architecture critical for automotive CAN and industrial I/O protection.
Availability
BAS28E6433HTMA1 is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC I/O modules, and wireless sensor node development requiring stable component supply across multi-year production cycles.
Supply support for BAS28E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to IATF 16949.
The BAS28 series belongs to Infineon's high-speed discrete diode product line, engineered specifically for AEC-Q101-compliant automotive signal integrity and ESD protection applications - emphasizing reliability under thermal and electrical stress.
FAQ
What is the maximum allowable junction temperature for BAS28E6433HTMA1?
The absolute maximum junction temperature (Tj) is 150°C, as specified in the Infineon datasheet. Operation above this threshold risks permanent degradation of the silicon PN junctions and violates AEC-Q101 qualification limits. Derating curves in Figure 4 confirm safe DC current limits at elevated ambient temperatures.
Can BAS28E6433HTMA1 be used as a replacement for BAS28W in the same PCB layout?
No - BAS28E6433HTMA1 uses SOT143 (4-pin), while BAS28W uses SOT343 (also 4-pin but different pin spacing and thermal characteristics). Though both are dual-diode packages, their footprints are mechanically incompatible; SOT343 has 0.65 mm pitch versus SOT143's 0.95 mm pitch, requiring PCB redesign.
Does BAS28E6433HTMA1 support bidirectional ESD protection per IEC 61000-4-2?
Yes - its symmetric parallel-pair structure allows bidirectional clamping. Each diode breaks down at ≥85 V in reverse, and IR remains ≤0.1 µA at 75 V, enabling effective 8 kV contact discharge suppression when configured as a back-to-back pair across signal lines.
What is the surge current capability of BAS28E6433HTMA1 during transient events?
The non-repetitive peak surge forward current (IFS) is 4.5 A for t = 1 µs, as tested per Figure 6. This supports protection against short-duration transients like ISO 16750-2 jump-start pulses, but repeated surges require thermal analysis using RthJS ≤ 360 K/W and junction temperature monitoring.
BAS28E6433HTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-253-4, TO-253AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 75 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT-143-3D
BAS28E6433HTMA1 FAQ
1.How can I place an order for BAS28E6433HTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS28E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS28E6433HTMA1 reliable?
The price and inventory of BAS28E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS28E6433HTMA1 is usually 5 days.
3.What payment methods are accepted for BAS28E6433HTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS28E6433HTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS28E6433HTMA1?
BAS28E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS28E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS28E6433HTMA1?
For technical support, including BAS28E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS28E6433HTMA1 requirements.
6.How does Aetrix verify that BAS28E6433HTMA1 is sourced from the original manufacturer or authorized distributors?
All BAS28E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS28E6433HTMA1 meets industry standards.
7.What is the process for return or replacement of BAS28E6433HTMA1?
All BAS28E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS28E6433HTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS28E6433HTMA1 part is unused and in its original packaging.
Return procedure for BAS28E6433HTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS28E6433HTMA1 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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