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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Nexperia USA Inc. BAS29,215

Name: BAS29,215
Brand: Nexperia USA Inc.
SKU: BAS29,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAS29,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Diodes

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAS29,215.pdf

Description:: DIODE AVAL 90V 250MA TO236AB

Quantity:: RFQ Add To RFQ list

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Inventory:2,241

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Product details

Overview

BAS29,215 from Nexperia is a single general-purpose controlled avalanche switching diode in SOT23 package, rated for 90 V continuous reverse voltage, 600 mA repetitive peak forward current, and 50 ns reverse recovery time. It serves as a fast-switching protection or signal routing element in surface-mounted power management and interface circuits.

For engineers reviewing the BAS29,215 datasheet, BAS29,215 pinout, BAS29,215 application, or BAS29,215 equivalent, key selection criteria include its 120–170 V reverse avalanche breakdown, 35 pF junction capacitance at 0 V, low 750 mV forward voltage at 10 mA, and thermal resistance of 500 K/W on FR4 PCB.

Technical Context

The BAS29,215 is a planar-processed silicon switching diode optimized for controlled avalanche operation, enabling robust transient energy handling without external clamping. Its 120–170 V reverse breakdown range (at 1 mA) and 5 mJ repetitive peak reverse energy rating support reliable overvoltage suppression in compact DC/DC feedback paths and signal line protection.

Designed for SMT assembly in space-constrained applications, it operates with junction temperatures up to 150 °C and maintains stable leakage (<100 nA at 90 V, 25 °C) while delivering sub-50 ns switching performance under 30 mA IF→IR transition conditions with 100 Ω load.

Key Specifications

Parameter	Value and Actual Design Meaning
V_R	90 V continuous reverse voltage - sets maximum steady-state blocking capability in bias or clamp configurations
V_RRM	110 V repetitive peak reverse voltage - defines safe transient reverse surge limit per IEC 60134
I_FRM	600 mA repetitive peak forward current - supports pulsed switching in logic-level or sensor interface drivers
t_rr	50 ns max reverse recovery time - enables use in <10 MHz switching nodes without excessive switching loss
V_(BR)R	120–170 V reverse avalanche breakdown - provides predictable, non-destructive clamping above rated V_R
C_d	35 pF diode capacitance at 0 V - limits high-frequency loading in RF-coupled or clock distribution paths
R_{th j-a}	500 K/W thermal resistance on FR4 - determines temperature rise under 250 mW total dissipation at 25 °C ambient

Pinout & Package

Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead package with standard footprint and soldering profile per JEDEC MO-203.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode	Forward current entry point; connects to higher-potential node in rectification or clamping path
2	Not connected	No internal bond wire; electrically isolated - must remain unconnected in PCB layout
3	Cathode	Forward current exit and reverse voltage reference terminal; ties to system ground or return rail

Key Features

Feature	Design Value
Controlled avalanche operation	Guaranteed 120–170 V reverse breakdown at 1 mA enables repeatable overvoltage clamping without Zener-style tolerance drift
Fast 50 ns recovery	Enables efficient switching in 5–10 MHz digital signal routing, sample-and-hold, and PWM timing circuits
SOT23 footprint compatibility	Standardized 2.8 × 1.4 mm outline allows drop-in replacement in legacy designs using BAS16, BAV99, or MMBD4148
Low 750 mV V_F @ 10 mA	Minimizes forward conduction loss in low-current bias networks and precision reference paths

Applications

Power Supply Clamp

Digital Signal Protection

Use Scenario: Clamping flyback voltage spikes across relay coils or inductive loads in 24 V industrial control modules.

IC Role / Device Role / Timing Role: Avalanche diode providing passive overvoltage suppression during switch-off transients.

Use Value: Absorbs up to 5 mJ repetitive reverse energy without degradation, extending MOSFET lifetime in solenoid drivers.

Use Scenario: Protecting GPIO pins of microcontrollers against ESD and signal overshoot in USB peripheral interfaces.

IC Role / Device Role / Timing Role: Fast-switching shunt diode limiting input voltage to safe levels during transient events.

Use Value: 50 ns t_rr ensures minimal signal distortion during 10 MHz data bursts while maintaining <100 nA leakage at 3.3 V bias.

DC/DC Feedback Snubber

High-Speed Logic Level Shifting

Use Scenario: Damping ringing in optocoupler feedback loops of isolated 5 V/12 V buck converters.

IC Role / Device Role / Timing Role: Controlled-avalanche diode absorbing high-frequency oscillation energy at secondary-side error amplifier output.

Use Value: 35 pF capacitance avoids phase shift in 100 kHz–1 MHz compensation networks while sustaining 90 V reverse hold.

Use Scenario: Bidirectional level translation between 1.8 V FPGA I/O and 3.3 V sensor interface lines.

IC Role / Device Role / Timing Role: Low-V_F, low-C_d switching diode enabling sub-ns edge preservation in push-pull configurations.

Use Value: 750 mV V_F at 10 mA and 35 pF C_d minimize propagation delay skew and capacitive loading on high-speed data lanes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar general-purpose switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBD4148-7-F	Lower V_RRM (100 V), faster t_rr (4 ns), no controlled avalanche rating	Not suitable for repetitive clamping; better for pure high-speed signal steering	Select when avalanche energy absorption is unnecessary and nanosecond switching dominates design priority
BAS16,215	Same SOT23 package; lower V_RRM (80 V), higher leakage (1 µA @ 75 V)	Limited to lower-voltage rails; less robust under sustained reverse stress	Choose for cost-sensitive 5–12 V logic applications where 90 V blocking is not required

Compared with MMBD4148-7-F and BAS16,215, the BAS29,215 uniquely combines 90 V continuous blocking, controlled 120–170 V avalanche behavior, and 5 mJ energy rating-making it the only option among the three qualified for repetitive transient suppression in 24 V industrial power stages.

Availability

BAS29,215 is available at Aetrix Electronics and suitable for industrial control systems, automotive body electronics, and consumer power adapters requiring stable component supply and long-term obsolescence management.

Supply support for BAS29,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.

The BAS29 belongs to Nexperia's General Purpose Switching Diodes product line, engineered for robust SMT deployment in cost-sensitive, space-constrained applications demanding predictable avalanche behavior and stable parametric performance across temperature.

FAQ

Is BAS29,215 pin-compatible with BAS16,215?

Yes - both use identical SOT23 package with anode on pin 1, no-connect on pin 2, and cathode on pin 3. However, BAS29,215 offers higher 90 V continuous reverse voltage versus BAS16,215's 80 V rating, and its controlled avalanche behavior is not present in BAS16,215. Layout reuse is possible, but electrical validation is required for 80–90 V operating margins.

What does "controlled avalanche" mean for BAS29,215?

Controlled avalanche means the diode is process-tuned to enter uniform, non-destructive reverse breakdown at 120–170 V (measured at 1 mA), dissipating up to 5 mJ per pulse without parameter shift. Unlike uncontrolled breakdown, this behavior is repeatable, specified, and qualified for repetitive use in clamping applications - not just one-time surge protection.

Can BAS29,215 replace BAV99 in dual-diode configurations?

No - BAS29,215 is a single-diode device; BAV99 integrates two series-connected diodes in one SOT363 package. For dual-diode functionality, Nexperia's BAS31,215 (two diodes in series) or BAS35,215 (common-anode dual) are direct functional alternatives, sharing the same SOT23 footprint and avalanche characteristics.

What is the maximum allowable PCB trace width for 600 mA peak current?

At 600 mA peak with 100 µs pulse width and 25 °C ambient, the junction temperature rise is limited by R_{th j-a} = 500 K/W and P_tot = 250 mW. A minimum 0.5 mm wide, 35 µm thick copper trace (1 oz/ft²) on external layer meets IPC-2221 guidelines for 600 mA short pulses. For continuous 250 mA, increase to ≥0.8 mm width with thermal relief to inner ground planes.

BAS29,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Avalanche

Voltage - DC Reverse (Vr) (Max):: 90 V

Current - Average Rectified (Io):: 250mA

Voltage - Forward (Vf) (Max) @ If:: 1 V @ 200 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 50 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 90 V

Capacitance @ Vr, F:: 35pF @ 0V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

Operating Temperature - Junction:: 150°C (Max)

BAS29,215 FAQ

1.How can I place an order for BAS29,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS29,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS29,215 reliable?

The price and inventory of BAS29,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS29,215 is usually 5 days.

3.What payment methods are accepted for BAS29,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS29,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS29,215?

BAS29,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS29,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS29,215?

For technical support, including BAS29,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS29,215 requirements.

6.How does Aetrix verify that BAS29,215 is sourced from the original manufacturer or authorized distributors?

All BAS29,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS29,215 meets industry standards.

7.What is the process for return or replacement of BAS29,215?

All BAS29,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAS29,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS29,215 part is unused and in its original packaging.

Return procedure for BAS29,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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