Infineon Technologies BAS3005S-02LRHE6327

Overview

BAS3005S-02LRHE6327 from Infineon Technologies is a low-forward-voltage Schottky diode in TSLP-2-17 package, rated for 30 V reverse voltage and 0.5 A continuous forward current, with VF = 450 mV at IF = 500 mA and CT = 10–15 pF at VR = 5 V / 1 MHz, optimized for mobile phone battery charger circuits.

For engineers reviewing the BAS3005S-02LRHE6327 datasheet, BAS3005S-02LRHE6327 pinout, BAS3005S-02LRHE6327 application, or BAS3005S-02LRHE6327 equivalent, key selection criteria include ultra-low VF at high current, minimal footprint (1.0 × 0.6 mm), thermal resistance ≤60 K/W, RoHS-compliant Pb-free construction, and junction temperature up to 150 °C.

Technical Context

This Schottky diode uses a planar silicon structure with metal–semiconductor junction to achieve fast switching (no minority-carrier storage) and low conduction loss. Its TSLP-2-17 package features asymmetric lead pitch and cathode marking for unambiguous PCB orientation.

The device operates across –55 °C to +150 °C ambient, with derated VR and IF above 25 °C; thermal design must account for RthJS ≤60 K/W and board-level RthJA ≈160 K/W per Infineon's thermal application note.

Key Specifications

Pinout & Package

TSLP-2-17 is a 2-terminal surface-mount package with asymmetrical lead geometry (0.65 mm pitch), cathode marked by laser on top surface, and exposed copper pad for thermal dissipation. Footprint requires 0.35 mm stencil aperture and 0.76 mm pad length per terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB521S-30T2R and NSR0530HT1G, BAS3005S-02LRHE6327 uniquely combines 0.5 A rating, 450 mV VF ceiling, and 1.0 × 0.6 mm size-enabling higher power density in space-constrained mobile power stages where both current and footprint are limiting.

Availability

BAS3005S-02LRHE6327 is available at Aetrix Electronics and suitable for USB PD adapters, smartphone battery charging circuits, and wireless power receiver modules requiring stable component supply, consistent parametric performance, and RoHS-compliant manufacturing.

Supply support for BAS3005S-02LRHE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

The BAS3005S-02LRHE6327 belongs to Infineon's Trench Schottky diode product line, engineered specifically for ultra-compact, high-efficiency power conversion in portable consumer electronics.

FAQ

What is the maximum allowable soldering temperature for BAS3005S-02LRHE6327?

The device is qualified for standard lead-free reflow profiles with peak temperature up to 260 °C for ≤10 seconds, per JEDEC J-STD-020. The TSLP-2-17 package uses NiPdAu-plated terminals compatible with SnAgCu solder alloys and standard PCB assembly processes.

Does BAS3005S-02LRHE6327 have a specified reverse recovery time (trr)?

No trr value is specified because this is a majority-carrier Schottky diode with no minority-carrier storage delay. Its switching is limited only by junction capacitance (CT = 10–15 pF) and package inductance, enabling effective operation at frequencies beyond 100 MHz in RF detector or high-speed rectifier roles.

Can BAS3005S-02LRHE6327 be used in reverse polarity protection circuits?

Yes-it is commonly deployed as a series anode-cathode blocking diode in input power rails. With 30 V VR and 0.5 A IF, it protects downstream circuitry from accidental reverse battery connection or adapter miswiring in portable equipment.

How does the TSLP-2-17 package affect thermal performance compared to SOD-523?

TSLP-2-17 achieves RthJS ≤60 K/W due to its exposed copper thermal pad and optimized internal metallization, whereas SOD-523 typically delivers RthJS ≈90–110 K/W. This 35–45% improvement allows sustained 0.5 A operation on thinner PCBs without thermal vias.