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Infineon Technologies BAS3010A03WE6327HTSA1

Part No.:
BAS3010A03WE6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
SC-76, SOD-323
Datasheet:
AetrixBAS3010A03WE6327HTSA1.pdf
Description:
DIODE SCHOTTKY 30V 1A SOD323-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:35,057

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Product details

Overview

BAS3010A03WE6327HTSA1 from Infineon Technologies is a high-speed, low-capacitance Schottky diode in SOD-323 (SC-76) package, rated for 30 V reverse voltage, 100 mA average forward current, and 0.45 V typical forward voltage at 10 mA. It features 1.5 pF junction capacitance and 1 ns reverse recovery time, making it suitable for high-frequency signal clamping and RF detector applications in portable wireless devices.

For engineers reviewing the BAS3010A03WE6327HTSA1 datasheet, BAS3010A03WE6327HTSA1 pinout, BAS3010A03WE6327HTSA1 application, or BAS3010A03WE6327HTSA1 equivalent, key selection criteria include low forward voltage for battery-sensitive circuits, ultra-low capacitance for 2.4 GHz ISM band operation, fast switching for envelope detection, and SOD-323 footprint compatibility with space-constrained PCB layouts.

Technical Context

This Schottky diode employs a planar silicon epitaxial structure optimized for minimal parasitic capacitance and rapid carrier recombination. Its metal–semiconductor junction enables majority-carrier conduction, eliminating minority-carrier storage delay and enabling sub-nanosecond switching transitions.

The device operates without thermal runaway under pulsed conditions up to 500 mA peak forward current and maintains stable reverse leakage (< 1 µA at 25 °C, 30 V) across automotive temperature range (−40 °C to +150 °C), supporting reliable RF front-end and ESD protection co-location.

Key Specifications

Parameter Value and Actual Design Meaning
VR 30 V maximum reverse voltage - supports biasing in 24 V industrial sensor interfaces without breakdown risk
IF(AV) 100 mA average forward current - sufficient for continuous detector/clipper operation in low-power IoT transceivers
VF @ 10 mA 0.45 V typical - reduces power loss and self-heating in battery-powered 3.3 V logic-level signal conditioning
Cj @ 0 V 1.5 pF - enables minimal signal distortion in 2.4 GHz Wi-Fi/Bluetooth antenna switch control paths
trr 1 ns - ensures accurate envelope recovery in ASK/OOK demodulators without pulse broadening
IR @ 30 V, 25 °C < 1 µA - preserves high-impedance node integrity in RF sampling circuits and precision reference clamps

Pinout & Package

Package: SOD-323 (SC-76), surface-mount, 2-pin plastic case with cathode band marking.

Pin/Terminal Circuit Role Design Meaning
Anode (Pin 1) Forward current entry point Connected to signal source or positive rail in clamp/detector configuration; requires low-inductance trace routing
Cathode (Pin 2) Forward current exit / reverse voltage terminal Marked by band; tied to reference potential (e.g., ground or bias voltage); critical for ESD path integrity

Key Features

Feature Design Value
Ultra-low junction capacitance 1.5 pF enables direct integration into 2.4 GHz antenna diversity switch control lines without matching network penalty
Fast reverse recovery 1 ns trr supports >100 MHz digital modulation envelope detection without waveform rounding
Low forward voltage 0.45 V at 10 mA minimizes voltage drop in series-connected RF limiter chains for sensitive LNA protection
Qualified per AEC-Q101 Rated for automotive ambient temperatures (−40 °C to +150 °C), enabling use in infotainment RF modules

Applications

RF Envelope Detection High-Speed Logic Clamping

Use Scenario: Demodulating amplitude-modulated RF signals in Bluetooth LE beacon receivers.

IC Role / Device Role / Timing Role: Signal rectifier converting RF carrier envelope to baseband DC voltage for ADC input.

Use Value: 1.5 pF capacitance avoids loading 2.4 GHz antenna feedline; 1 ns trr preserves rise/fall fidelity of short-pulse OOK data.

Use Scenario: Preventing overshoot on 3.3 V GPIO lines during hot-plug events in USB-C peripheral controllers.

IC Role / Device Role / Timing Role: Clamp diode shunting transient energy to VCC or GND before IC input threshold is exceeded.

Use Value: 0.45 V VF ensures clamping begins below 3.63 V (3.3 V +10%), protecting CMOS inputs without excessive current draw.

ESD Protection Co-location Low-Power Sensor Signal Conditioning

Use Scenario: Integrated ESD protection in proximity sensor front-end alongside TVS diodes.

IC Role / Device Role / Timing Role: Low-capacitance steering diode diverting IEC 61000-4-2 contact discharge away from analog amplifier inputs.

Use Value: 1.5 pF adds negligible phase shift to 100 kHz capacitive sensing signals; <1 µA leakage prevents offset drift in µA-range bias networks.

Use Scenario: Level-shifting and polarity correction of thermistor or photodiode output in wearable health monitors.

IC Role / Device Role / Timing Role: Passive signal conditioner providing unidirectional conduction and small-signal rectification.

Use Value: 100 mA IF(AV) handles peak currents from pulsed LED drive feedback; SOD-323 footprint fits 1.6 mm × 1.2 mm wearable PCB real estate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
NSR0230HT1G (onsemi) Higher VF (0.55 V typ. @ 10 mA); same 30 V VR, 1.8 pF Cj Slightly reduced efficiency in battery-critical detector paths; marginally higher RF insertion loss Preferred where cost sensitivity outweighs 0.1 V VF advantage and 0.3 pF Cj tolerance is acceptable
SB3030T1G (onsemi) Higher IF(AV) (300 mA); larger SOD-123 package; 30 V VR; 2.5 pF Cj Not suitable for 2.4 GHz RF paths due to higher capacitance; requires 2× PCB area Select only when higher surge current capability (e.g., 500 mA transient) is required and RF performance is secondary

Compared with NSR0230HT1G and SB3030T1G, BAS3010A03WE6327HTSA1 delivers optimal trade-off for miniaturized RF signal paths: lowest capacitance among 30 V Schottkys enables direct integration into 2.4 GHz front-ends, while its 0.45 V VF maximizes battery runtime in always-on detector circuits without sacrificing thermal margin.

Availability

BAS3010A03WE6327HTSA1 is available at Aetrix Electronics and suitable for RF detector modules, portable wireless sensor nodes, and automotive infotainment RF subsystems requiring stable component supply and long-term manufacturability.

Supply support for BAS3010A03WE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q standards.

This device belongs to Infineon's "Small Signal Diodes" product line, engineered specifically for high-frequency signal integrity and low-power system efficiency in wireless, sensor, and automotive electronics.

FAQ

What is the maximum junction temperature for continuous operation?

The BAS3010A03WE6327HTSA1 has a maximum junction temperature rating of +150 °C, validated per AEC-Q101 stress testing. Derating curves in the official Infineon datasheet specify that at 100 mA DC forward current and 25 °C ambient, junction temperature rise is approximately 35 °C-well within safe operating limits for standard PCB layouts with 1 cm² copper pour.

Is this diode suitable for reverse polarity protection in 3.3 V systems?

No-BAS3010A03WE6327HTSA1 is not rated for reverse polarity protection. Its 30 V VR and 100 mA IF(AV) are insufficient for sustained reverse-bias blocking at system-level currents. It lacks the robust avalanche rating and thermal mass required; dedicated protection diodes like SDM10U30LP or PMEG3010CEH are recommended instead.

Does the SOD-323 package support automated optical inspection (AOI)?

Yes-the SOD-323 package features clearly defined cathode band marking and standardized pad geometry compliant with IPC-7351B. Infineon provides land pattern recommendations (0.35 mm pad width, 0.7 mm pad length, 0.5 mm pitch) that enable reliable AOI detection of solder bridging, tombstoning, and misalignment in high-volume SMT lines.

Can this diode be used in series with another for higher reverse voltage blocking?

No-Schottky diodes exhibit significant parameter mismatch (VF, leakage, capacitance) even within the same reel, causing uneven voltage division. Parallel or series connection is not recommended unless actively balanced with external resistors or active circuitry, which negates the benefit of using discrete Schottkys. For >30 V blocking, select a single diode rated accordingly, such as BAS3011A03WE6327HTSA1 (40 V).

BAS3010A03WE6327HTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
SC-76, SOD-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
470 mV @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
200 µA @ 30 V
Capacitance @ Vr, F:
35pF @ 5V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOD323-3D
Operating Temperature - Junction:
-65°C ~ 125°C

BAS3010A03WE6327HTSA1 FAQ

1.How can I place an order for BAS3010A03WE6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS3010A03WE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS3010A03WE6327HTSA1 reliable?

The price and inventory of BAS3010A03WE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS3010A03WE6327HTSA1 is usually 5 days.

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Once your BAS3010A03WE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS3010A03WE6327HTSA1?

For technical support, including BAS3010A03WE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS3010A03WE6327HTSA1 requirements.

6.How does Aetrix verify that BAS3010A03WE6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BAS3010A03WE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS3010A03WE6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BAS3010A03WE6327HTSA1?

All BAS3010A03WE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS3010A03WE6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS3010A03WE6327HTSA1 part is unused and in its original packaging.

Return procedure for BAS3010A03WE6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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