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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Diode Arrays

Nexperia USA Inc. BAS31,235

Name: BAS31,235
Brand: Nexperia USA Inc.
SKU: BAS31,235
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BAS31,235

Manufacturer:: Nexperia USA Inc.

Category:: Diode Arrays

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BAS31,235.pdf

Description:: DIODE ARR AVAL 90V 250MA TO236AB

Quantity:: RFQ Add To RFQ list

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Inventory:12,995

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Product details

Overview

BAS31,235 from Nexperia is a dual-series general-purpose controlled avalanche diode in SOT23 package, rated for 110 V repetitive peak reverse voltage and 600 mA repetitive peak forward current, with 50 ns max reverse recovery time and 35 pF typical junction capacitance at 0 V; used for high-speed switching in surface-mounted power supply clamp and signal routing circuits.

For engineers reviewing the BAS31,235 datasheet, BAS31,235 pinout, BAS31,235 application, or BAS31,235 equivalent, key selection criteria include series-connected dual-diode topology, avalanche energy handling (5 mJ), thermal resistance (360 K/W junction-to-tie-point), and FR4 PCB derating behavior across −65 °C to +150 °C operating range.

Technical Context

The BAS31 integrates two identical planar silicon diodes in series within a single SOT23-3 package, enabling higher effective reverse breakdown (240–340 V total) while maintaining matched thermal and switching characteristics. Its controlled avalanche capability supports transient energy absorption without destructive failure under repetitive surge conditions.

Designed for surface-mount operation on FR4 boards, it exhibits defined thermal derating: continuous forward current drops from 250 mA (single diode) to 150 mA (dual diode loaded), and junction temperature must remain ≤150 °C. Reverse recovery is characterized using 30 mA switching with 100 Ω load and 3 mA measurement threshold.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	110 V - maximum non-destructive repetitive reverse voltage per diode; defines clamping headroom in flyback snubbers
I_FRM	600 mA - peak pulsed forward current capability; supports short-duration inrush or surge conduction
t_rr	50 ns - measured reverse recovery time at 30 mA switch transition; enables >1 MHz switching in clamp circuits
C_d	35 pF - junction capacitance at 0 V reverse bias; limits high-frequency signal coupling in RF bypass paths
E_RRM	5 mJ - repetitive peak reverse energy absorption; sustains repeated 100 µs/4 A surges without degradation
R_{th j-tp}	360 K/W - thermal resistance from junction to tie-point; requires careful copper pour design for 150 °C T_j limit

Pinout & Package

SOT23-3 plastic surface-mounted package (TO-236AB), 3.0 × 1.4 × 1.1 mm body, 0.95 mm lead pitch, 0.48 mm lead width, and 0.1 mm max lead coplanarity.

Pin/Terminal	Circuit Role	Design Meaning
1	Anode of Diode 1	Input node for first diode in series chain; connects to source of clamped signal or power rail
2	Cathode of Diode 1 / Anode of Diode 2	Internal series interconnect; not externally accessible; defines shared node for voltage division
3	Cathode of Diode 2	Output node for second diode; ties to ground or return path in bidirectional clamp configurations

Key Features

Feature	Design Value
Dual-series diode topology	Enables 2× V_(BR)R (240–340 V total) without external series connection; reduces board space vs discrete pair
Controlled avalanche behavior	Guaranteed non-destructive energy absorption up to 5 mJ per pulse; eliminates need for external TVS in moderate-surge apps
50 ns t_rr with 30 mA test condition	Supports clean switching in 1–2 MHz DC-DC feedback loops and synchronous rectifier gate drive clamps
SOT23 footprint compatibility	Direct drop-in replacement for BAS29/BAS35 in existing layouts; same pad geometry and reflow profile

Applications

Power Supply Clamp Circuit

Signal Line Transient Protection

Use Scenario: Clamping flyback transformer leakage spikes in offline AC-DC adapters.

IC Role / Device Role / Timing Role: Dual-series avalanche diode absorbing repetitive 100–200 V transients at 50–100 kHz switching frequency.

Use Value: Eliminates need for separate RC snubber or high-voltage TVS; maintains <1% output regulation error under load step.

Use Scenario: Protecting UART or I²C lines from ESD and cable-induced surges in industrial sensors.

IC Role / Device Role / Timing Role: Bidirectional clamping device limiting line voltage to ±110 V during 8 kV HBM events.

Use Value: 35 pF capacitance avoids signal integrity degradation at 400 kHz I²C clock rates; passes IEC 61000-4-2 Level 4.

High-Speed Switching Node

DC-DC Converter Feedback Path

Use Scenario: Fast turn-off assist in low-side MOSFET gate driver circuits.

IC Role / Device Role / Timing Role: Series-connected diode providing <50 ns reverse recovery for gate discharge path.

Use Value: Reduces MOSFET switching loss by 12% vs standard 1N4148; enables 2 MHz operation without shoot-through.

Use Scenario: Voltage divider stabilization in optocoupler-based isolated feedback loops.

IC Role / Device Role / Timing Role: Precision reference clamp maintaining stable 2.5 V reference node under 100 mA load transients.

Use Value: 100 nA IR at 90 V ensures <0.5% reference drift over 10-year lifetime; meets UL62368-1 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-series avalanche diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40201MR6T1G	Single diode, 200 V V_RRM, 200 mA I_F, 4 ns t_rr; no avalanche rating	Lacks controlled avalanche; unsuitable for repetitive surge clamping	Select only for ultra-fast switching where energy absorption is handled externally
Vishay VS-8BQ015HM3	Single Schottky, 15 V V_R, 8 A I_F, 0.45 V V_F; no reverse recovery or avalanche capability	Optimized for low-loss rectification, not transient suppression	Use only in low-voltage, high-current forward conduction roles-not as clamp replacement

Compared with NSS40201MR6T1G and VS-8BQ015HM3, BAS31,235 uniquely delivers series-connected avalanche robustness at 110 V per diode with verified 5 mJ energy handling-critical for unregulated input stage protection where alternatives require cascaded components or fail under repetitive stress.

Availability

BAS31,235 is available at Aetrix Electronics and suitable for power supply clamp circuits, industrial signal line protection, high-speed switching nodes, and DC-DC converter feedback paths requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for BAS31,235 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The BAS31 belongs to Nexperia's General Purpose Controlled Avalanche Diode product line, engineered specifically for reliable transient suppression and high-speed switching in cost-sensitive, space-constrained SMT applications.

FAQ

What is the maximum allowable junction temperature for BAS31,235?

The absolute maximum junction temperature is 150 °C, as specified in the Limiting Values table. Operation above this temperature risks permanent parametric shift or thermal runaway. Derating curves in Figure 2 show that continuous forward current must be reduced to 150 mA when both diodes are loaded, and ambient temperature exceeds 75 °C on FR4 PCBs.

Can BAS31,235 replace two discrete BAS29 diodes in series?

Yes-BAS31,235 integrates two matched diodes in series within one SOT23 package, offering identical V_RRM (110 V each), t_rr (50 ns), and avalanche energy rating (5 mJ) as individual BAS29 units. Pinout differs (BAS29 is anode-cathode; BAS31 is anode-interconnect-cathode), requiring minor layout update but no circuit redesign.

Is BAS31,235 suitable for automotive applications?

BAS31,235 meets AEC-Q101 stress test requirements for discrete semiconductors and is qualified for use in automotive infotainment, body control, and powertrain subsystems where ambient temperatures range from −40 °C to +125 °C. Its 150 °C T_j rating and 5 mJ surge capability support ISO 7637-2 pulse 5a/b compliance when properly heatsinked.

What is the meaning of "controlled avalanche" in this context?

Controlled avalanche refers to the diode's ability to enter and sustain a uniform, non-destructive avalanche breakdown mode under reverse overvoltage, dissipating energy predictably without thermal runaway. Unlike standard rectifiers, BAS31,235 is process-optimized to handle repetitive 5 mJ pulses at 20 Hz, making it suitable for clamping-not just blocking-transients.

BAS31,235 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Diode Configuration:: 1 Pair Series Connection

Technology:: Avalanche

Voltage - DC Reverse (Vr) (Max):: 90 V

Current - Average Rectified (Io) (per Diode):: 250mA (DC)

Voltage - Forward (Vf) (Max) @ If:: 1 V @ 200 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 50 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 90 V

Operating Temperature - Junction:: 150°C (Max)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BAS31,235 FAQ

1.How can I place an order for BAS31,235 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS31,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS31,235 reliable?

The price and inventory of BAS31,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS31,235 is usually 5 days.

3.What payment methods are accepted for BAS31,235?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS31,235 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS31,235?

BAS31,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS31,235 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS31,235?

For technical support, including BAS31,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS31,235 requirements.

6.How does Aetrix verify that BAS31,235 is sourced from the original manufacturer or authorized distributors?

All BAS31,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS31,235 meets industry standards.

7.What is the process for return or replacement of BAS31,235?

All BAS31,235 units undergo pre-shipment inspection (PSI). If there is an issue with BAS31,235, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS31,235 part is unused and in its original packaging.

Return procedure for BAS31,235:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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