Nexperia USA Inc. BAS316/DG/B4F

Overview

BAS316/DG/B4F from Nexperia is a high-speed switching diode in SOD323 (SC-76) surface-mount package, configured as a single discrete silicon diode with cathode-anode polarity. It delivers trr ≤ 4 ns reverse recovery time, VR = 100 V maximum reverse voltage, and IR ≤ 0.5 µA at VR = 80 V, enabling use in fast-switching DC-DC converter flyback snubbers and signal routing circuits.

For engineers reviewing the BAS316/DG/B4F datasheet, BAS316/DG/B4F pinout, BAS316/DG/B4F application, or BAS316/DG/B4F equivalent, key selection criteria include verified 4 ns trr performance, low 1.5 pF capacitance at 0 V, AEC-Q101 qualification for automotive environments, and compatibility with reflow soldering per JEDEC J-STD-020.

Technical Context

This diode employs planar epitaxial construction optimized for rapid carrier recombination, achieving sub-4 ns reverse recovery under IF = 10 mA / IR = 10 mA test conditions with 100 Ω load. Its junction design minimizes minority-carrier storage, directly supporting high-frequency (>100 MHz) switching in power management and RF signal path isolation.

The SOD323 package provides thermal resistance Rth(j-sp) = 55 K/W to solder point and supports 250 mA continuous forward current (IF), with peak surge capability of 500 mA (IFRM) and 4 A (IFSM) for transient overload handling in compact PCB layouts.

Key Specifications

Pinout & Package

SOD323 (SC-76) plastic surface-mounted package; 2-terminal leaded device with cathode marked by bar on top surface. Dimensions: 1.7 mm × 1.3 mm × 0.9 mm (L × W × H); standard footprint per Fig. 15 and Fig. 28 in Nexperia BAS16_SER Rev. 6.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with BAS316/DG/B4F, BAS16J offers identical electrical specs in an equivalently qualified package, while BAS516 trades slightly higher assembly complexity for 0.5 pF lower capacitance and 120 K/W lower thermal resistance-critical for mmWave detector designs.

Availability

BAS316/DG/B4F is available at Aetrix Electronics and suitable for automotive signal clamping, DC-DC converter snubbing, and RF detector circuits requiring stable component supply across production lifecycles.

Supply support for BAS316/DG/B4F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete, logic, and MOSFET solutions.

The BAS16 series targets high-speed switching applications in automotive, industrial, and communications systems, emphasizing AEC-Q101 qualification, low trr, and miniature SMD packaging for space- and performance-critical designs.

FAQ

What is the maximum junction temperature for BAS316/DG/B4F?

The absolute maximum junction temperature (Tj) is 150 °C, validated per IEC 60134 limiting values. At Tamb = 25 °C with standard FR4 PCB mounting, the device sustains 250 mA continuous forward current without exceeding this limit, supported by Rth(j-sp) = 55 K/W thermal resistance to solder point.

Is BAS316/DG/B4F suitable for reflow soldering?

Yes-BAS316/DG/B4F is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature rating of 260 °C for 30 seconds. The recommended footprint matches Nexperia's SOD323 reflow pattern (Fig. 28), using 0.5 mm × 0.6 mm solder pads with 0.6 mm spacing.

How does the 4 ns trr value impact circuit performance?

A 4 ns trr enables clean switching in circuits operating up to 200 MHz, minimizing reverse recovery charge (Qrr ≈ 40 pC) that causes shoot-through in half-bridge configurations and ringing in snubber networks. This value is measured under standardized IF = 10 mA / IR = 10 mA / RL = 100 Ω conditions.

What marking code identifies BAS316/DG/B4F on the device body?

The marking code is "A6", laser-etched on the top surface adjacent to the cathode bar. This matches Table 5 of the Nexperia BAS16_SER Rev. 6 datasheet and distinguishes it from BAS16 (also "A6*") and BAS16J ("AR") variants in the same SOD323 family.