Toshiba Semiconductor and Storage BAS316,H3F

Overview

BAS316,H3F from Toshiba Electronic Devices & Storage Corporation is a silicon epitaxial planar switching diode in SOD-323 (USC) package, featuring 100 V peak reverse voltage, 250 mA average rectified current, and 3.0 ns reverse recovery time. It serves as a high-speed signal path switch or clamp in low-power digital logic interfaces and RF detector circuits.

For engineers reviewing the BAS316,H3F datasheet, BAS316,H3F pinout, BAS316,H3F application, or BAS316,H3F equivalent, key selection criteria include reverse recovery performance under 10 mA forward bias, low capacitance (0.35 pF typ. at 0 V), thermal derating on FR4 boards, and cathode/anode terminal assignment in ultra-small surface-mount packages.

Technical Context

The BAS316,H3F employs a silicon epitaxial planar structure optimized for fast switching with minimal minority-carrier storage. Its 3.0 ns reverse recovery time (trr) is measured at IF = 10 mA with specified test circuit per Fig. 4.1, enabling use in 10–50 MHz signal routing and pulse shaping.

Thermal design relies on its 230 mW power dissipation rating on a standard FR4 board (20 mm × 20 mm, 4 mm × 4 mm Cu pad), and junction temperature must remain ≤150 °C. Reverse leakage stays below 30 nA at VR = 25 V and 200 nA at VR = 80 V, supporting stable DC blocking in precision analog front-ends.

Key Specifications

Pinout & Package

Package: SOD-323 (JEDEC), also marked USC; weight 4.5 mg (typ.); land pattern per datasheet Rev.1.0.B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Compared with BAV99,215 and 1N4148W-7-F, the BAS316,H3F delivers superior high-frequency response and minimal capacitive loading in space-constrained designs, while trading off absolute surge current rating and general-purpose ruggedness.

Availability

BAS316,H3F is available at Aetrix Electronics and suitable for high-speed digital clamping, RF envelope detection, precision level shifting, and low-power pulse generation requiring stable component supply across automotive infotainment, industrial IoT sensors, and medical wearable electronics.

Supply support for BAS316,H3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on reliability, efficiency, and miniaturization.

The BAS316,H3F belongs to Toshiba's high-speed switching diode product line, engineered specifically for low-capacitance, fast-recovery operation in compact, high-frequency signal-path applications.

FAQ

What is the maximum reverse recovery time specification for BAS316,H3F?

The BAS316,H3F has a maximum reverse recovery time (trr) of 3.0 ns, measured at IF = 10 mA with the test circuit shown in Figure 4.1 of the official Toshiba datasheet Rev.1.0.B. This value is guaranteed under the stated test conditions and reflects the device's capability for sub-nanosecond switching transitions in high-frequency applications such as RF detection and digital signal clamping. The BAS316,H3F maintains this performance across its rated temperature range when operated within absolute maximum limits.

How is the cathode identified on the BAS316,H3F package?

The cathode of the BAS316,H3F is designated as Pin 1 on the SOD-323 (USC) package, marked by a visible polarity band on the component body. In the standard orientation with the marking side up and the cathode band to the left, Pin 1 is the left terminal. This matches the internal circuit diagram and land pattern layout provided in Toshiba's datasheet Rev.1.0.B. Correct cathode identification is essential for proper forward conduction in BAS316,H3F-based clamping and detection circuits.

Can BAS316,H3F be used in RF detector applications?

Yes, the BAS316,H3F is suitable for RF detector applications due to its low total capacitance (0.35 pF typ. at 0 V, 1 MHz) and fast reverse recovery (3.0 ns). These characteristics minimize RF signal attenuation and preserve envelope fidelity in AM demodulation circuits operating up to 2.4 GHz. The BAS316,H3F has been validated in zero-bias detector configurations where low junction capacitance and consistent forward voltage are critical, making it a preferred choice over higher-C alternatives in compact wireless sensor receivers.

What is the power dissipation limit of BAS316,H3F on a standard PCB?

The BAS316,H3F has a power dissipation limit of 230 mW when mounted on an FR4 board measuring 20 mm × 20 mm with a 4 mm × 4 mm copper pad, as specified in Note 2 of the Toshiba datasheet. This rating assumes ambient temperature (Ta) of 25 °C and accounts for thermal resistance to ambient under those physical conditions. Exceeding this limit risks junction temperature exceeding 150 °C, which may accelerate degradation. Derating is required above 25 °C ambient, and the BAS316,H3F datasheet provides the PD–Ta curve (Fig. 7.4) for precise thermal design.

Is BAS316,H3F RoHS compliant?

Yes, the BAS316,H3F is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Toshiba Electronic Devices & Storage Corporation. Lead-free solderability and absence of restricted substances-including lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE-are verified in Toshiba's environmental compliance documentation. Customers should reference Toshiba's official RoHS certificate for BAS316,H3F to confirm compliance status for specific production lots, as the BAS316,H3F is manufactured under Toshiba's standardized green production process.