Nexperia USA Inc. BAS316-QF

Overview

BAS316-Q from Nexperia is a high-speed switching diode in SOD323 (SC-76) package, rated for 100 V repetitive peak reverse voltage (VRRM), 4 ns reverse recovery time (trr), and 250 mA continuous forward current (IF). It serves as a fast-turn-off unidirectional switch in automotive signal routing and power rail clamping circuits.

For engineers reviewing the BAS316-Q datasheet, BAS316-Q pinout, BAS316-Q application, or BAS316-Q equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (Rth(j-sp) = 150 K/W), and real-world switching performance under IF = 10 mA / IR = 10 mA conditions.

Technical Context

The BAS316-Q employs a planar epitaxial silicon structure optimized for low charge storage and minimal minority carrier lifetime, enabling trr ≤ 4 ns at IF = 10 mA, IR = 10 mA, and RL = 100 Ω. Its junction capacitance is tightly controlled at Cd = 1.5 pF (VR = 0 V, f = 1 MHz).

Designed for automotive-grade reliability, it meets AEC-Q101 stress test requirements including temperature cycling, HTRB, and ESD (HBM ≥ 8 kV). The cathode-tab thermal path provides Rth(j-sp) = 150 K/W to solder point, supporting stable operation up to Tj = 150 °C.

Key Specifications

Pinout & Package

Encapsulated in a 2-pin SOD323 (SC-76) surface-mount plastic package measuring 1.7 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch. Cathode tab serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with NSR0230P2T5G and ES1JHM3/84A, the BAS316-Q uniquely balances 100 V rating, 4 ns speed, and AEC-Q101 compliance in a 1.7 mm × 1.25 mm footprint-making it optimal for automotive signal integrity and compact power management where both voltage margin and timing fidelity matter.

Availability

BAS316-Q is available at Aetrix Electronics and suitable for automotive door modules, USB-C port protection circuits, engine control unit (ECU) sensor bias networks, and ADAS camera power sequencing requiring stable component supply across extended temperature ranges.

Supply support for BAS316-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

The BAS316-Q belongs to Nexperia's AEC-Q101-qualified high-speed diode product line, engineered specifically for automotive signal integrity, ESD protection, and power rail switching where fast recovery, low leakage, and thermal robustness are mandatory.

FAQ

Is BAS316-Q suitable for CAN FD bus protection?

Yes. With 1.5 pF junction capacitance and 4 ns trr, the BAS316-Q introduces negligible signal distortion on CAN FD differential pairs operating up to 5 Mbps. Its 100 V VRRM withstands automotive load-dump transients, and AEC-Q101 qualification ensures reliability in vehicle networking environments.

What is the maximum allowable PCB copper area for thermal relief on the cathode pad?

The cathode tab is designed for direct thermal connection to PCB copper. For optimal Rth(j-sp) = 150 K/W, use ≥ 25 mm² of 1 oz copper connected via ≥ 4 thermal vias (0.3 mm diameter, filled) to internal ground planes. Larger copper areas further reduce junction temperature but do not improve the specified Rth(j-sp) metric.

Does BAS316-Q support wave soldering?

Yes. Nexperia provides dedicated wave soldering footprints (Fig. 9) with 2.75 mm × 1.2 mm solder lands and preferred transport direction alignment. Peak temperature must not exceed 260 °C for ≤ 5 seconds, and preheat ramp rate should stay within 1–3 °C/s to avoid package cracking or delamination.

How does BAS316-Q perform at 150 °C junction temperature?

At Tj = 150 °C, reverse leakage rises to 50 µA at VR = 80 V (per Table 7), while VF increases by ~120 mV versus 25 °C. trr remains stable at ≤ 4 ns due to minimized minority carrier lifetime. Derating of IF to 120 mA is recommended for continuous operation at this temperature.