Nexperia USA Inc. BAS316-QZ

Overview

BAS316-Q from Nexperia is a high-speed switching diode in SOD323 (SC-76) package, designed for fast signal routing and voltage clamping in automotive-grade circuits. It delivers trr ≤ 4 ns reverse recovery time, VR = 100 V maximum reverse voltage, and IF = 250 mA continuous forward current, enabling reliable operation in engine control units and infotainment power rails.

For engineers reviewing the BAS316-Q datasheet, BAS316-Q pinout, BAS316-Q application, or BAS316-Q equivalent, key selection criteria include its AEC-Q101 qualification, low 1.5 pF capacitance at 0 V, sub-1 V forward voltage at 10 mA, and cathode/anode terminal assignment in ultra-compact 1.7 mm × 1.25 mm footprint.

Technical Context

The BAS316-Q employs a planar epitaxial silicon structure optimized for minimal minority-carrier storage, enabling nanosecond-scale switching transitions. Its junction design achieves trr ≤ 4 ns under standardized IF/IR = 10 mA test conditions with 100 Ω load and 1 mA measurement threshold.

Thermal performance is defined by Rth(j-sp) = 150 K/W to cathode solder point, supporting continuous operation up to Tj = 150 °C. The device operates across –65 °C to +150 °C ambient range and maintains IR ≤ 0.5 µA at VR = 80 V and Tamb = 25 °C.

Key Specifications

Pinout & Package

Encapsulated in SOD323 (SC-76) surface-mount plastic package: 1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, two-terminal configuration with exposed cathode tab for thermal and electrical anchoring.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with NSVRBAS316WT1G and VS-3BAS316-M3/84A, the BAS316-Q offers optimal balance of automotive qualification, ultra-low capacitance, and consistent 855 mV VF-making it preferred for new SMT-based automotive electronics where board space and EMI control are critical.

Availability

BAS316-Q is available at Aetrix Electronics and suitable for automotive engine control units, USB 2.0 interface protection, high-frequency DC-DC converters, and RF envelope detection circuits requiring stable component supply and full traceability.

Supply support for BAS316-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.

The BAS316-Q belongs to Nexperia's AEC-Q101-qualified high-speed diode product line, engineered specifically for robust switching in automotive power management, signal routing, and ESD protection applications.

FAQ

Is BAS316-Q suitable for 48 V automotive systems?

Yes. With VRRM = 100 V and AEC-Q101 qualification, the BAS316-Q supports 48 V nominal systems including transient overvoltage events up to ±100 V. Its 0.5 µA IR at 80 V ensures minimal leakage in always-on gateway modules operating across –40 °C to +125 °C.

What is the maximum continuous forward current rating?

The rated continuous forward current (IF) is 250 mA at Tamb ≤ 90 °C on FR4 PCB with single-side copper and standard SOD323 footprint. Derating applies above 90 °C ambient; at 125 °C, max IF drops to approximately 150 mA based on thermal resistance and junction temperature limits.

Does BAS316-Q have a built-in ESD protection structure?

No. The BAS316-Q is a basic high-speed switching diode without integrated ESD clamp structures. For I/O line protection, it must be used in conjunction with external TVS diodes or as part of a discrete ESD protection network-its low Cd and fast trr make it ideal for such hybrid configurations.

Can BAS316-Q replace Schottky diodes in low-voltage applications?

Only where VF tolerance permits. At 10 mA, BAS316-Q VF = 855 mV versus typical Schottky VF of 300–500 mV. It is viable in 3.3 V or 5 V logic clamping where 0.85 V drop is acceptable, but not recommended for 1.8 V rail protection or high-efficiency synchronous rectification where lower VF is mandatory.