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Nexperia USA Inc. BAS35,215
- Part No.:
- BAS35,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS35,215.pdf
- Description:
- DIODE ARR AVAL 90V 250MA TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,644
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Product details
Overview
BAS35,215 from Nexperia is a dual common-anode general-purpose controlled avalanche diode in SOT23 package, rated for 110 V repetitive peak reverse voltage, 600 mA repetitive peak forward current, and 50 ns reverse recovery time. It serves as a compact, high-speed switching element in surface-mounted power management and signal routing circuits.
For engineers reviewing the BAS35,215 datasheet, BAS35,215 pinout, BAS35,215 application, or BAS35,215 equivalent, key selection criteria include common-anode dual-diode topology, avalanche energy rating (5 mJ), thermal resistance (360 K/W junction-to-tie-point), and FR4 PCB derating behavior across ambient temperatures up to +150 °C.
Technical Context
The BAS35,215 integrates two planar-processed silicon diodes sharing a single anode terminal (Pin 3), enabling bidirectional clamping or dual-path switching from one node. Its controlled avalanche capability supports transient energy absorption without external snubbers in inductive load switching.
Designed for surface-mount assembly on FR4 boards, it operates with a maximum junction temperature of 150 °C and exhibits low capacitance (35 pF at 0 V) and tight forward voltage distribution (750–1250 mV at 10–400 mA), supporting stable timing and signal integrity in high-density layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 110 V - Maximum non-repetitive reverse voltage before breakdown; defines safe operating range in flyback or clamp circuits. |
| IFRM | 600 mA - Peak pulsed forward current per diode; supports short-duration surge handling in switching nodes. |
| trr | 50 ns - Measured reverse recovery time at 30 mA switch conditions; enables >1 MHz switching in DC-DC converters. |
| Cd | 35 pF - Diode capacitance at 0 V reverse bias; limits high-frequency signal coupling and EMI generation. |
| Ptot | 250 mW - Total power dissipation at 25 °C ambient; requires thermal derating above 25 °C per Fig.2 curve. |
| Rth j-tp | 360 K/W - Junction-to-tie-point thermal resistance; critical for estimating local temperature rise under PCB copper constraints. |
Pinout & Package
Package: SOT23 (TO-236AB), plastic surface-mounted, 3-lead outline per IEC/JEDEC standards; dimensions: 2.9 × 1.3 × 1.0 mm (L × W × H), lead pitch 1.9 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (K1) | Independent cathode path for first diode; used for discrete clamping or OR-ing functions. |
| 2 | Cathode (K2) | Independent cathode path for second diode; enables dual-output protection or differential sensing. |
| 3 | Common Anode (A) | Shared anode connection; simplifies layout for bidirectional current sourcing from one node. |
Key Features
| Feature | Design Value |
|---|---|
| Controlled avalanche capability | 5 mJ repetitive peak reverse energy rating at Tj = 25 °C; enables self-limiting overvoltage protection without external Zener networks. |
| Low reverse leakage | 100 nA at 90 V and 25 °C; ensures minimal standby power loss in battery-backed or low-power systems. |
| Thermal robustness | 150 °C maximum junction temperature; supports operation in automotive under-hood or industrial motor drive environments. |
| SMT-compatible footprint | SOT23 package with 1.9 mm lead pitch; compatible with standard reflow profiles and automated optical inspection (AOI). |
Applications
| Power Supply Clamp Circuit | Signal-Level OR Gate |
|---|---|
Use Scenario: Clamping inductive kickback from relay coils or solenoid drivers in 24 V industrial control modules. IC Role / Device Role / Timing Role: Dual-cathode configuration allows independent clamping of two separate inductive loads referenced to a shared supply rail. Use Value: Eliminates need for two discrete diodes and reduces PCB area by 35% versus SOD-323 alternatives while maintaining 110 V VRRM. | Use Scenario: Logic-level OR function for fault signaling from redundant sensors in HVAC controllers. IC Role / Device Role / Timing Role: Common-anode structure enables wired-OR output combining multiple open-collector sensor alerts into one microcontroller input. Use Value: Forward voltage matching (±30 mV at 10 mA) ensures consistent logic threshold detection across both paths. |
| ESD Protection Node | Dual-Rail Voltage Translation |
Use Scenario: Bidirectional I/O line protection on USB 2.0 data lines in portable medical devices. IC Role / Device Role / Timing Role: Each cathode connects to a separate data line (D+, D−), with common anode tied to VCC for low-clamp conduction. Use Value: 35 pF capacitance minimizes signal distortion at 480 Mbps; 100 nA leakage preserves bus idle state integrity. | Use Scenario: Level shifting between 3.3 V MCU GPIO and 5 V peripheral interface in test equipment. IC Role / Device Role / Timing Role: One diode conducts during high-to-low transition; other handles low-to-high, enabling bidirectional translation without active circuitry. Use Value: 50 ns trr supports clean edge transitions up to 10 MHz; VF consistency ensures symmetric rise/fall delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual common-anode diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,215 | Same SOT23 package; lower VRRM (100 V), faster trr (4 ns), higher leakage (1 µA at 90 V). | Better for high-frequency RF switching; less suitable for 110 V industrial transients. | Select when speed dominates over voltage margin and leakage is tolerable. |
| BAS21,215 | Single-diode SOT23; 250 V VRRM, 250 mA IF, no dual topology. | Requires two devices for dual-path use; occupies more board space but offers higher voltage headroom. | Select when system requires >110 V standoff and discrete layout flexibility outweighs integration benefit. |
Compared with BAV99,215 and BAS21,215, the BAS35,215 uniquely balances 110 V ruggedness, dual common-anode integration, and 50 ns recovery-making it optimal for space-constrained industrial clamping where moderate speed and high transient immunity are jointly required.
Availability
BAS35,215 is available at Aetrix Electronics and suitable for industrial control modules, automotive body electronics, and consumer power adapters requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for BAS35,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with manufacturing and R&D centers across Asia, Europe, and the Americas.
The BAS35 belongs to Nexperia's General Purpose Diodes product line, engineered specifically for high-reliability surface-mounted switching in cost-sensitive, high-volume industrial and automotive applications where controlled avalanche behavior and SMT scalability are essential.
FAQ
What is the maximum continuous forward current per diode in the BAS35,215 at 25 °C ambient?
At 25 °C ambient temperature on an FR4 PCB, the maximum continuous forward current per diode is 150 mA when both diodes are simultaneously loaded, as specified in the Limiting Values table. This derates linearly to zero at +150 °C ambient per Fig.2, reflecting thermal coupling between the dual die in the SOT23 package.
Does the BAS35,215 support bidirectional clamping?
No - the BAS35,215 has a common anode configuration (Pin 3), so both diodes conduct only from anode to their respective cathodes (Pins 1 and 2). For true bidirectional clamping, a dual-common-cathode device like BAS31 or back-to-back discrete diodes would be required.
Can the BAS35,215 replace the BAS29 or BAS31 in existing designs?
Not directly - BAS29 is a single diode, BAS31 is dual-series, and BAS35 is dual-common-anode. Pinout and internal topology differ: BAS35 uses Pins 1/K1, 2/K2, 3/A; BAS31 uses Pins 1/A, 2/K, 3/K. Substitution requires schematic and layout revision to accommodate the common-anode connection scheme.
What is the significance of the 'controlled avalanche' specification?
Controlled avalanche means the diode is characterized to safely absorb repetitive reverse-energy transients (up to 5 mJ) without degradation, unlike standard rectifiers. This enables use as a self-protecting clamp in inductive switching circuits - eliminating external TVS diodes in many 24–48 V industrial applications.
BAS35,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Avalanche
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 90 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAS35,215 FAQ
1.How can I place an order for BAS35,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS35,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS35,215 reliable?
The price and inventory of BAS35,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS35,215 is usually 5 days.
3.What payment methods are accepted for BAS35,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS35,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS35,215?
BAS35,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS35,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS35,215?
For technical support, including BAS35,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS35,215 requirements.
6.How does Aetrix verify that BAS35,215 is sourced from the original manufacturer or authorized distributors?
All BAS35,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS35,215 meets industry standards.
7.What is the process for return or replacement of BAS35,215?
All BAS35,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAS35,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS35,215 part is unused and in its original packaging.
Return procedure for BAS35,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS35,215 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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