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Vishay General Semiconductor - Diodes Division BAS40-00-E3-18

Part No.:
BAS40-00-E3-18
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS40-00-E3-18.pdf
Description:
DIODE SCHOTTKY 40V 200MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,967

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Product details

Overview

BAS40-00-E3-18 from Vishay Semiconductors is a single silicon Schottky diode in SOT-23 package, rated for 40 V repetitive peak reverse voltage, 200 mA forward current, and 5 ns reverse recovery time. It delivers low forward voltage (380 mV at 1 mA) and ultra-low leakage (≤100 nA at 30 V), enabling efficient signal clamping and high-speed switching in portable power management circuits.

For engineers reviewing the BAS40-00-E3-18 datasheet, BAS40-00-E3-18 pinout, BAS40-00-E3-18 application, or BAS40-00-E3-18 equivalent, key selection criteria include its 40 V VRRM, 5 ns trr, SOT-23 footprint compatibility, RoHS-compliant commercial-grade qualification, and verified performance in 1 MHz RF detector and battery protection paths.

Technical Context

This Schottky diode operates with a metal–semiconductor junction to achieve fast switching and low forward voltage drop, distinguishing it from standard PN-junction diodes. Its guardring-protected structure enhances ESD robustness without compromising speed or leakage.

The device is characterized under standard test conditions (Tamb = 25 °C) with pulse-tested parameters including 40 mA forward voltage (1.0 V max) and 4–5 pF junction capacitance at 0 V bias, supporting stable RF and high-frequency sampling applications.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum reverse blocking capability for use in 3.3 V/5 V rail clamping and 24 V auxiliary supply protection
IF200 mA continuous - Supports moderate-current signal routing and logic-level translation without thermal derating on FR-4
trr5 ns - Enables reliable operation in >100 MHz switching nodes and RF envelope detection
VF @ 1 mA380 mV typ. - Minimizes voltage loss in low-power sensor biasing and precision reference steering
CD @ 0 V4–5 pF - Low junction capacitance preserves signal integrity in 1 MHz–100 MHz small-signal AC coupling paths
IR @ 30 V≤100 nA max. - Ensures negligible leakage in high-impedance sample-and-hold and battery monitoring circuits

Pinout & Package

Package: SOT-23 (JEDEC TO-236AB), 3-terminal surface-mount plastic case, 8.8 mg weight, 2.8 mm × 2.35 mm footprint with 0.95 mm lead pitch.

Pin/TerminalCircuit RoleDesign Meaning
1AnodeMain current entry point; connects to higher-potential node in forward conduction path
2CathodeMain current exit point; ties to lower-potential node or ground reference in clamp/detector configurations
3Not connected (NC)Internal die pad with no electrical connection; serves mechanical anchoring only

Key Features

FeatureDesign Value
Low VF at low current380 mV typ. at 1 mA enables accurate DC biasing in micropower analog front-ends
Fast trr5 ns allows clean edge preservation in digital signal routing and RF demodulation
Guardring protectionIntegrated PN junction guardring suppresses ESD-induced failure without external TVS
SOT-23 footprintStandardized 3-pin package supports automated placement and reflow compatibility across industrial PCB lines

Applications

RF Signal DetectorBattery Protection Circuit

Use Scenario: Demodulating AM signals or detecting RF envelope in ISM-band transceivers (e.g., 315 MHz, 433 MHz).

IC Role / Device Role / Timing Role: Schottky detector diode converting RF AC to DC baseband voltage.

Use Value: 5 ns trr and 4–5 pF CD ensure minimal phase distortion and high detection efficiency at 1–100 MHz.

Use Scenario: Reverse-polarity and overvoltage protection in Li-ion battery-powered IoT sensors.

IC Role / Device Role / Timing Role: Low-VF series blocking diode preventing backfeed during charging or fault conditions.

Use Value: 380 mV VF at 1 mA minimizes standby power loss while maintaining 40 V isolation margin.

Logic-Level TranslatorClamp Diode in ADC Input

Use Scenario: Level-shifting between 1.8 V microcontroller I/O and 3.3 V peripheral interfaces.

IC Role / Device Role / Timing Role: Passive bidirectional voltage translator using forward-conduction threshold.

Use Value: Consistent 380 mV turn-on ensures predictable crossing point and avoids metastability in mixed-voltage domains.

Use Scenario: Protecting SAR ADC input pins from transient overvoltage during sensor hot-plug events.

IC Role / Device Role / Timing Role: Fast-acting clamp limiting input to VDD + 0.4 V and GND − 0.3 V.

Use Value: 5 ns trr and ≤100 nA leakage preserve acquisition accuracy and prevent hold capacitor discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR0230HT1GSame SOT-23 package; 30 V VRRM, 200 mA IF, 0.45 V VF @ 10 mA - lower voltage rating, higher VFNot suitable for 36 V auxiliary rails or 40 V surge protection; acceptable for 3.3 V logic clamping onlySelect when system max reverse voltage ≤30 V and cost sensitivity outweighs 40 V margin
1N5711DO-35 glass package; 70 V VRRM, 150 mA IF, 1.0 V VF @ 10 mA - higher voltage, larger size, slower trr (~10 ns)Requires through-hole layout; unsuitable for high-density RF layouts due to parasitic inductance and capacitanceChoose only for legacy through-hole designs needing >40 V rating and where board space permits

Compared with NSR0230HT1G and 1N5711, the BAS40-00-E3-18 uniquely balances 40 V rating, 5 ns speed, SOT-23 scalability, and sub-400 mV low-current VF-making it optimal for modern compact, high-frequency, and battery-sensitive designs where voltage margin, speed, and footprint are jointly constrained.

Availability

BAS40-00-E3-18 is available at Aetrix Electronics and suitable for RF detector modules, battery management subsystems, and logic-level translation circuits requiring stable component supply, consistent parametric performance across production lots, and long-term commercial-grade availability.

Supply support for BAS40-00-E3-18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, passive elements, and sensors, with leadership in reliability-critical power and signal conditioning devices.

The BAS40 family was designed specifically for high-speed, low-loss signal routing and protection in space-constrained consumer, industrial, and communications equipment-emphasizing fast recovery, low leakage, and standardized SOT-23 integration.

FAQ

What is the maximum reverse voltage rating for BAS40-00-E3-18?

The BAS40-00-E3-18 has a repetitive peak reverse voltage (VRRM) rating of 40 V, verified per Vishay's datasheet Rev. 2.2 (Document Number: 85701). This rating applies under standard ambient conditions and defines the maximum sustained reverse bias the BAS40-00-E3-18 can block without breakdown. Exceeding this value risks irreversible junction damage.

Is BAS40-00-E3-18 RoHS-compliant and what does the "E3" suffix indicate?

Yes, BAS40-00-E3-18 is RoHS-compliant. The "E3" suffix denotes Vishay's standard commercial-grade packaging: lead (Pb)-free terminations, halogen-free molding compound, and compliance with EU Directive 2011/65/EU. It is not AEC-Q101 qualified-that requires the "HE3" suffix variant.

What is the typical forward voltage of BAS40-00-E3-18 at 1 mA forward current?

The typical forward voltage (VF) of BAS40-00-E3-18 is 380 mV at 1 mA and 25 °C, as specified in the Electrical Characteristics table of the official datasheet. This low VF enables precise biasing in micropower analog stages and improves efficiency in low-current signal-path applications involving the BAS40-00-E3-18.

Does BAS40-00-E3-18 have a built-in ESD protection structure?

Yes, the BAS40-00-E3-18 incorporates a PN junction guardring that provides inherent protection against electrostatic discharge events. This feature is explicitly documented in the Features section of the Vishay datasheet and eliminates the need for external ESD components in many low-energy signal-path applications using the BAS40-00-E3-18.

What is the reverse recovery time (trr) of BAS40-00-E3-18 and how is it measured?

The reverse recovery time (trr) of BAS40-00-E3-18 is 5 ns, measured under the condition: IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω. This value reflects the diode's ability to transition rapidly from conduction to blocking state, critical for high-frequency rectification and detection tasks where the BAS40-00-E3-18 is deployed.

BAS40-00-E3-18 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
200mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 50 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
100 nA @ 30 V
Capacitance @ Vr, F:
5pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Operating Temperature - Junction:
125°C (Max)

BAS40-00-E3-18 FAQ

1.How can I place an order for BAS40-00-E3-18 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS40-00-E3-18 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS40-00-E3-18 reliable?

The price and inventory of BAS40-00-E3-18 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-00-E3-18 is usually 5 days.

3.What payment methods are accepted for BAS40-00-E3-18?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-00-E3-18 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS40-00-E3-18?

BAS40-00-E3-18 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS40-00-E3-18 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS40-00-E3-18?

For technical support, including BAS40-00-E3-18 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-00-E3-18 requirements.

6.How does Aetrix verify that BAS40-00-E3-18 is sourced from the original manufacturer or authorized distributors?

All BAS40-00-E3-18 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-00-E3-18 meets industry standards.

7.What is the process for return or replacement of BAS40-00-E3-18?

All BAS40-00-E3-18 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-00-E3-18, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS40-00-E3-18 part is unused and in its original packaging.

Return procedure for BAS40-00-E3-18:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS40-00-E3-18 Tags

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