Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BAS4004E6433HTMA1

Part No.:
BAS4004E6433HTMA1
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS4004E6433HTMA1.pdf
Description:
DIODE ARR SCHOTT 40V 120MA SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:28,121

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS4004E6433HTMA1 from Vishay is a silicon Schottky diode in SOT23 package configured as a common-anode dual diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW power dissipation at TS ≤ 56 °C, used for high-speed switching and voltage clamping in automotive signal conditioning circuits.

For engineers reviewing the BAS4004E6433HTMA1 datasheet, BAS4004E6433HTMA1 pinout, BAS4004E6433HTMA1 application, or BAS4004E6433HTMA1 equivalent, key selection criteria include VF matching (≤20 mV), low CT (3 pF typ. @ 0 V), fast trr (≤100 ps), and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This dual common-anode Schottky diode enables independent anode referencing with shared cathode connection, supporting bidirectional clamping or dual-path signal routing. Its low forward voltage (310–720 mV across 1–40 mA) and minimal junction capacitance (3 pF typ.) support high-frequency operation up to several hundred MHz.

The device exhibits fast recovery (trr ≤ 100 ps) and low differential forward resistance (RF = 10 Ω typ. @ 10 kHz), making it suitable for RF detector/mixer stages and transient suppression where minimal signal distortion and insertion loss are critical.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)40 V - Supports clamping of 3.3 V/5 V/12 V logic and supply rails without breakdown.
Forward Current (IF)120 mA - Sustains continuous DC current in signal path protection and level-shifting applications.
Forward Voltage (VF)310 mV @ 10 mA - Enables low-loss signal rectification and detection in battery-powered RF modules.
Junction Capacitance (CT)3 pF @ 0 V, 1 MHz - Minimizes capacitive loading on high-impedance RF nodes (e.g., antenna switch control lines).
Reverse Recovery Time (trr)≤100 ps - Ensures clean switching in >100 MHz clock/data paths and mixer LO injection circuits.
Thermal Resistance (RthJS)375 K/W - Limits junction temperature rise to safe levels under 120 mA DC load in SOT23 footprint.
ESD RatingHBM Class 2 (≥2 kV) - Meets IEC 61000-4-2 Level 2 for board-level ESD robustness in automotive ECUs.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with gull-wing leads, 2.9 mm × 1.3 mm footprint, 1.1 mm height, RoHS-compliant matte tin lead finish.

Pin/TerminalCircuit RoleDesign Meaning
Anode 1 (Pin 1)Input node for first diode pathAccepts positive-going transients or RF signals requiring clamping to common cathode.
Cathode (Pin 2)Shared cathode nodeProvides common reference point for dual-diode configuration; connects to system ground or bias rail.
Anode 2 (Pin 3)Input node for second diode pathEnables independent clamping or mixing of second signal channel without cross-coupling.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, body electronics, and ADAS sensor interfaces.
VF matching (ΔVF)≤20 mV between diodes - Ensures balanced performance in differential signal paths and dual-channel detectors.
Low leakage (IR)≤1 µA @ 30 V - Preserves signal integrity in high-impedance sampling circuits and battery monitoring.
Fast switching speedtrr ≤ 100 ps - Reduces timing skew and harmonic distortion in GHz-range RF front-end designs.
Pb-free & RoHS compliantMeets EU Directive 2011/65/EU - Supports lead-free reflow assembly and environmental compliance reporting.

Applications

Automotive CAN Transceiver ProtectionRF Signal Detector Stage

Use Scenario: Clamping transient voltages on CAN_H/CAN_L lines during load dump or ESD events in vehicle networks.

IC Role / Device Role / Timing Role: Dual common-anode Schottky clamp protecting transceiver I/O pins against ±30 V surges while preserving signal edge fidelity.

Use Value: Prevents latch-up and damage without adding propagation delay or distorting 1 Mbps CAN waveforms due to low CT and fast trr.

Use Scenario: Demodulating AM/FM RF carriers in telematics antenna modules using envelope detection.

IC Role / Device Role / Timing Role: Low-VF Schottky pair acting as synchronous detector with matched conduction characteristics.

Use Value: Delivers >40 dB dynamic range and <1% THD at 100 MHz due to tight ΔVF and sub-10 Ω RF.

USB 2.0 Data Line ClampHigh-Speed Logic Level Shifter

Use Scenario: Protecting USB D+/D− lines from ESD and overvoltage in infotainment head units.

IC Role / Device Role / Timing Role: Bidirectional clamping diode pair referenced to 3.3 V rail, limiting excursion to VDD + 0.3 V and GND − 0.3 V.

Use Value: Maintains 480 Mbps data integrity by limiting parasitic capacitance to 3 pF and avoiding signal reflection.

Use Scenario: Translating 1.8 V logic outputs to 3.3 V inputs in camera interface circuits.

IC Role / Device Role / Timing Role: Passive level shifter using forward-biased Schottky diodes with series resistors to set threshold.

Use Value: Achieves <2 ns propagation delay and supports >100 MHz toggle rates with no active components or supply dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual common-anode Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR20F40NXT5GSingle diode, 40 V VR, 200 mA IF, SOD-123FL package - lacks dual configuration and VF matching spec.Requires two devices for dual-path use; higher mounting area and thermal resistance (RthJS = 420 K/W).Use only when dual-diode integration is unnecessary and board space allows discrete placement.
RB520S-40T1GCommon-cathode dual Schottky, 40 V VR, 200 mA IF, SOT-23 - opposite polarity configuration.Suitable for cathode-referenced clamping; incompatible for anode-referenced topologies without circuit redesign.Select only if system grounding scheme aligns with common-cathode architecture and VF matching is not required.

Compared with NSR20F40NXT5G and RB520S-40T1G, BAS4004E6433HTMA1 uniquely delivers AEC-Q101-qualified dual common-anode topology with guaranteed VF matching and optimized RthJS for SOT23 thermal constraints-critical for compact automotive signal conditioning.

Availability

BAS4004E6433HTMA1 is available at Aetrix Electronics and suitable for automotive ECU design, RF module prototyping, and industrial sensor interface development requiring stable component supply and long-term lifecycle assurance.

Supply support for BAS4004E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with ISO/TS 16949-certified automotive production facilities.

BAS4004E6433HTMA1 belongs to Vishay's automotive-grade Schottky diode product line, designed specifically for high-reliability signal integrity and transient protection in harsh-environment electronic control units.

FAQ

Is BAS4004E6433HTMA1 qualified to AEC-Q101?

Yes. BAS4004E6433HTMA1 is explicitly qualified per AEC-Q101 Rev D for stress testing including HTGB, HTRB, TCT, and ESD-HBM ≥2 kV. Qualification applies to the SOT23 packaged variant with marking "44s" and lot codes meeting Vishay's automotive traceability requirements.

What is the maximum junction temperature and how is it enforced?

The absolute maximum junction temperature is 150 °C. This limit is enforced via derating curves in the datasheet: at ambient 85 °C, maximum continuous IF drops to ~60 mA for BAS40-04/BAS40-06 variants due to RthJS = 375 K/W and TS ≤ 56 °C thermal constraint.

Can BAS4004E6433HTMA1 be used in RF matching networks?

No. While its 3 pF capacitance and low RF resistance support RF detection and clamping, BAS4004E6433HTMA1 is not characterized for impedance matching or power handling in RF transmission paths. It lacks S-parameter data, power rating above 250 mW, and VSWR specifications required for matching network use.

How does the common-anode configuration affect PCB layout?

The common-anode configuration requires separate anode traces routed to distinct signal sources, with the shared cathode connected directly to a low-inductance ground or bias rail. Layout must minimize loop area between cathode pad and ground plane to preserve trr performance and avoid ringing during fast transients.

BAS4004E6433HTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Series Connection
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
120mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 40 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
100 ps
Current - Reverse Leakage @ Vr:
1 µA @ 30 V
Operating Temperature - Junction:
150°C (Max)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BAS4004E6433HTMA1 FAQ

1.How can I place an order for BAS4004E6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS4004E6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS4004E6433HTMA1 reliable?

The price and inventory of BAS4004E6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS4004E6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BAS4004E6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS4004E6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS4004E6433HTMA1?

BAS4004E6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS4004E6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS4004E6433HTMA1?

For technical support, including BAS4004E6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS4004E6433HTMA1 requirements.

6.How does Aetrix verify that BAS4004E6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BAS4004E6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS4004E6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BAS4004E6433HTMA1?

All BAS4004E6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS4004E6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS4004E6433HTMA1 part is unused and in its original packaging.

Return procedure for BAS4004E6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS4004E6433HTMA1 Tags

  • BAS4004E6433HTMA1
  • BAS4004E6433HTMA1 PDF
  • BAS4004E6433HTMA1 Datasheet
  • BAS4004E6433HTMA1 Specifications
  • BAS4004E6433HTMA1 Images
  • Infineon Technologies
  • Infineon Technologies BAS4004E6433HTMA1
  • Buy BAS4004E6433HTMA1
  • BAS4004E6433HTMA1 Price
  • BAS4004E6433HTMA1 Distributor
  • BAS4004E6433HTMA1 Supplier
  • BAS4004E6433HTMA1 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER