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Infineon Technologies BAS40-05B5000
- Part No.:
- BAS40-05B5000
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS40-05B5000.pdf
- Description:
- DIODE ARR SCHOTT 40V 120MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:90,000
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Product details
Overview
BAS40-05B5000 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as common anode dual diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW total power dissipation at Ts ≤ 104 °C, used for high-speed switching, voltage clamping, and RF signal mixing in portable communication receivers.
For engineers reviewing the BAS40-05B5000 datasheet, BAS40-05B5000 pinout, BAS40-05B5000 application, or BAS40-05B5000 equivalent, key selection criteria include VF matching (≤20 mV at IF = 10 mA), low CT (3 pF typ. at VR = 0 V, f = 1 MHz), fast τrr (≤100 ps), thermal resistance RthJS ≤ 185 K/W, and SOT23 common-anode layout for compact dual-diode signal routing.
Technical Context
This dual Schottky diode integrates two identical junctions sharing a common anode terminal, enabling balanced clamping or mixer operation with matched forward voltage characteristics. Its low differential forward resistance (10 Ω typ. at IF = 10 mA, f = 10 kHz) and sub-100 ps reverse recovery time support high-frequency signal integrity up to UHF bands.
The device operates across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C and thermal design constrained by RthJS ≤ 185 K/W - requiring careful PCB copper area allocation for heatsinking at full 120 mA DC load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - maximum blocking capability before breakdown; suitable for 3.3 V/5 V rail clamping and 24 V logic interface protection. |
| Forward Current (IF) | 120 mA - continuous DC current per diode; supports moderate-power detector and switching loads without derating below 104 °C case temperature. |
| Forward Voltage (VF) | 310–720 mV @ IF = 10 mA - low conduction loss enables efficient signal rectification and minimal voltage drop in bias networks. |
| Diode Capacitance (CT) | 3 pF typ. @ VR = 0 V, 1 MHz - low junction capacitance preserves bandwidth in RF mixer and detector stages up to ~1 GHz. |
| Reverse Recovery Time (τrr) | ≤100 ps - ultrafast switching enables use in >500 MHz sampling circuits and high-speed digital clamping applications. |
| Thermal Resistance (RthJS) | ≤185 K/W - defines minimum required PCB copper thermal pad area to maintain Tj ≤ 150 °C under 120 mA load at Ts = 104 °C. |
| Voltage Matching (∆VF) | ≤20 mV @ IF = 10 mA - ensures balanced performance between dual diodes in bridge or push-pull configurations. |
Pinout & Package
SOT23-3 package with gull-wing leads; standardized footprint per Infineon outline drawing (pin pitch 0.95 mm, body size 2.9 × 1.3 × 1.0 mm). Common-anode configuration: Pin 1 = Cathode A, Pin 2 = Anode (common), Pin 3 = Cathode B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode A | Output node for first diode; connects to signal path requiring clamping or detection relative to shared anode. |
| Pin 2 | Anode (common) | Shared input/reference node; must be tied to bias voltage or ground depending on circuit topology (e.g., series clamp or shunt detector). |
| Pin 3 | Cathode B | Output node for second diode; enables differential or complementary signal handling with matched VF to Pin 1. |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual diode structure | Enables compact implementation of balanced mixers, dual-rail clamps, or redundant protection paths without discrete pairing. |
| Matched forward voltage (∆VF ≤ 20 mV) | Guarantees ≤2% conduction mismatch between diodes, critical for amplitude-balanced RF demodulation and precision level detection. |
| Ultra-low reverse recovery time (τrr ≤ 100 ps) | Eliminates switching tail artifacts in high-frequency sampling gates and preserves edge fidelity in pulse-shaping circuits. |
| Low thermal resistance (RthJS ≤ 185 K/W) | Allows sustained 120 mA operation with minimal heatsinking-achievable using standard 2-layer PCB with 10 mm² exposed copper pad under package. |
| High-volume reel packaging (B5000: 10 k/reel) | Supports automated SMT placement at production scale with consistent tape-and-reel geometry (ø180 mm, 3 k/reel; ø330 mm, 10 k/reel). |
Applications
| RF Signal Mixer | Logic-Level Clamping |
|---|---|
Use Scenario: Downconversion stage in 868 MHz ISM-band receiver front-end using passive diode ring mixer topology. IC Role / Device Role / Timing Role: Dual Schottky switching element providing low-loss, broadband RF-to-IF signal translation with matched nonlinearity. Use Value: 3 pF CT and ≤100 ps τrr preserve mixer conversion efficiency above 900 MHz; ∆VF ≤ 20 mV ensures <0.5 dB image rejection imbalance. | Use Scenario: Input protection network for 3.3 V microcontroller GPIO pins exposed to industrial 24 V sensor signals. IC Role / Device Role / Timing Role: Bidirectional voltage clamp limiting transient excursions to ±0.7 V beyond supply rails. Use Value: 40 V VR withstands 24 V transients; 120 mA IF rating handles IEC 61000-4-5 surge currents; SOT23 footprint fits tight board space. |
| High-Speed Detector | Level Shifter Interface |
Use Scenario: Envelope detection in Bluetooth LE beacon transmitter output monitoring loop. IC Role / Device Role / Timing Role: Peak-hold rectifier converting 2.4 GHz modulated RF envelope into baseband DC voltage. Use Value: Low VF (310 mV typ. @ 1 mA) enables accurate detection down to –20 dBm; 100 ps τrr prevents averaging distortion at 1 Msps modulation rates. | Use Scenario: Level translation between 1.8 V FPGA I/O and 5 V legacy peripheral bus with bidirectional data flow. IC Role / Device Role / Timing Role: Passive clamping diode pair establishing safe voltage thresholds on shared data lines. Use Value: Matched VF ensures symmetric high/low threshold offsets; SOT23 common-anode layout simplifies PCB routing for dual-line clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR0230HT1G | Single diode, 30 V VR, 200 mA IF, VF = 270–430 mV @ 10 mA, CT = 4 pF | Lacks dual configuration and VF matching; higher VR margin but no common-anode functionality | Select when only one diode is needed and lower VF is prioritized over matching or dual topology |
| BAT54C | Common-cathode dual Schottky, 30 V VR, 200 mA IF, VF = 240–440 mV @ 10 mA, CT = 10 pF | Opposite polarity (common cathode); higher CT degrades >500 MHz performance; wider VF spread (±50 mV) | Choose for cost-sensitive 30 V systems where common-cathode topology aligns with existing schematic and bandwidth ≤300 MHz suffices |
Compared with NSR0230HT1G and BAT54C, the BAS40-05B5000 uniquely delivers common-anode dual topology with ≤20 mV VF matching and 3 pF CT - making it irreplaceable for balanced RF mixers and high-fidelity dual-clamp designs where symmetry and UHF bandwidth are mandatory.
Availability
BAS40-05B5000 is available at Aetrix Electronics and suitable for RF signal mixing, logic-level clamping, high-speed detection, and level shifter interface applications requiring stable component supply and consistent SOT23 tape-and-reel delivery.
Supply support for BAS40-05B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.
The BAS40 series belongs to Infineon's general-purpose Schottky diode product line, engineered for high-speed signal conditioning in portable wireless, industrial sensing, and consumer electronics where low VF, fast switching, and thermal robustness are essential.
FAQ
What is the maximum allowable junction temperature for BAS40-05B5000?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of the Schottky barrier and increased leakage current. Derating is required above Ts = 104 °C to maintain Tj ≤ 150 °C, governed by RthJS ≤ 185 K/W.
Can BAS40-05B5000 be used in automotive applications?
No - the datasheet explicitly states "Not for automotive applications" and notes that automotive qualification was "ongoing" as of the 2006 revision. It lacks AEC-Q101 qualification, and its reliability testing does not cover automotive temperature cycling, humidity, or vibration requirements.
How does the common-anode configuration affect PCB layout compared to BAT54C?
The common-anode (Pin 2 = anode) requires the shared terminal to connect to a positive bias or reference voltage, whereas BAT54C's common-cathode configuration ties the shared pin to ground or low-side reference. This reverses net routing direction and impacts ESD protection strategy - requiring re-evaluation of transient current paths and grounding topology.
Is BAS40-05B5000 pin-compatible with other BAS40 variants like BAS40-04 or BAS40-06?
Yes - all BAS40 variants (BAS40, BAS40-04, BAS40-05, BAS40-06) share the same SOT23-3 package and pinout. However, internal configuration differs: BAS40-04 is common-cathode, BAS40-06 is series-connected, and BAS40-05 is common-anode. Swapping requires schematic and layout verification to match topology.
BAS40-05B5000 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 30 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BAS40-05B5000 FAQ
1.How can I place an order for BAS40-05B5000 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40-05B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40-05B5000 reliable?
The price and inventory of BAS40-05B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-05B5000 is usually 5 days.
3.What payment methods are accepted for BAS40-05B5000?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-05B5000 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40-05B5000?
BAS40-05B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40-05B5000 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40-05B5000?
For technical support, including BAS40-05B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-05B5000 requirements.
6.How does Aetrix verify that BAS40-05B5000 is sourced from the original manufacturer or authorized distributors?
All BAS40-05B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-05B5000 meets industry standards.
7.What is the process for return or replacement of BAS40-05B5000?
All BAS40-05B5000 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-05B5000, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40-05B5000 part is unused and in its original packaging.
Return procedure for BAS40-05B5000:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40-05B5000 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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