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Infineon Technologies BAS 40-05 B5003
- Part No.:
- BAS 40-05 B5003
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS 40-05 B5003.pdf
- Description:
- DIODE ARR SCHOTT 40V 120MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:4,218
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Product details
Overview
BAS40-05 from Nexperia is a silicon Schottky diode in SOT23 package configured as a single high-speed switching diode with 40 V reverse voltage rating, 120 mA forward current capability, and low 380–500 mV forward voltage at 10 mA - used for voltage clamping and high-level signal detection in compact DC-DC converter feedback paths and RF detector circuits.
For engineers reviewing the BAS40-05 datasheet, BAS40-05 pinout, BAS40-05 application, or BAS40-05 equivalent, key selection criteria include thermal resistance (RthJS = 475 K/W), reverse leakage (<1 µA at 30 V), junction capacitance (3–5 pF), fast recovery time (<100 ps), and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This Schottky diode operates with zero minority-carrier storage, enabling sub-100 ps reverse recovery and minimal switching loss in high-frequency (>10 MHz) signal routing and clamping applications. Its low forward voltage drop and tight VF matching (≤20 mV at 10 mA) support precision analog detection and rail-to-rail signal conditioning.
The device is rated for continuous operation from −55 °C to +150 °C, with thermal derating defined by package-specific junction-to-solder-point resistance: 475 K/W for BAS40-05 reflects its SOT23 mounting constraint and limited copper pad area, requiring careful PCB thermal design for sustained 120 mA loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - supports clamping in 3.3 V/5 V/12 V logic and power rails without breakdown. |
| Forward Current (IF) | 120 mA continuous - sufficient for signal-level rectification and bias network current sourcing. |
| Forward Voltage (VF) | 380–500 mV at 10 mA - enables low-loss detection in RF envelope and battery-monitoring circuits. |
| Reverse Leakage (IR) | <1 µA at 30 V - ensures minimal standby current in high-impedance sensing nodes. |
| Junction Capacitance (CT) | 3–5 pF at 0 V, 1 MHz - preserves bandwidth in >100 MHz mixer and limiter stages. |
| Reverse Recovery Time (τrr) | <100 ps - eliminates switching tail distortion in fast digital edge clamping. |
| Thermal Resistance (RthJS) | 475 K/W - requires ≥25 mm² 1-oz copper pour under pad for safe 120 mA operation at 85 °C ambient. |
Pinout & Package
Package: SOT23 - surface-mount plastic package with gull-wing leads, 1.3 mm × 2.9 mm footprint, 1.1 mm height, suitable for automated placement and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Current entry point under forward bias | Connected to higher-potential node in clamping or detection path; polarity-sensitive for unidirectional conduction. |
| Cathode (Pin 2) | Current exit point under forward bias | Typically tied to reference (GND or bias rail); forms low-impedance return for detected signals. |
| NC / Heat Sink (Pin 3) | No internal connection | Exposed metal tab is not electrically connected; serves only mechanical anchoring and minor thermal relief. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | Sub-100 ps reverse recovery enables clean edge clamping in >100 MHz clock and data lines. |
| AEC-Q101 qualified | Validated for automotive under-hood applications including body control modules and sensor interfaces. |
| Low forward voltage | 380 mV typ. at 10 mA improves efficiency in low-voltage detector and OR-ing circuits. |
| Pb-free & RoHS compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles up to 260 °C peak. |
| Tight VF matching | ≤20 mV max spread across devices supports matched-pair use in differential detectors. |
Applications
| RF Signal Detection | Power Rail Clamping |
|---|---|
Use Scenario: Demodulating AM envelope in 2.4 GHz ISM-band receiver front-ends. IC Role / Device Role / Timing Role: Schottky detector diode converting RF amplitude to baseband DC voltage. Use Value: 3–5 pF capacitance and <100 ps τrr preserve modulation fidelity above 100 MHz. |
Use Scenario: Protecting 3.3 V microcontroller I/O pins from ESD transients during hot-plug USB enumeration. IC Role / Device Role / Timing Role: Fast-clamp element shunting transient energy to ground before IC damage threshold. Use Value: 40 V VR withstands system-level surge tests; <1 µA IR avoids loading sensitive input buffers. |
| DC-DC Feedback Sensing | High-Speed Logic Level Translation |
Use Scenario: Sampling output voltage of a 1.2 V synchronous buck converter for closed-loop regulation. IC Role / Device Role / Timing Role: Low-VF series diode isolating feedback divider from switching node noise. Use Value: 380 mV VF minimizes offset error in precision voltage sensing networks. |
Use Scenario: Bidirectional level shifting between 1.8 V FPGA I/O and 3.3 V peripheral UART lines. IC Role / Device Role / Timing Role: Passive clamp diode limiting voltage excursion beyond supply rails. Use Value: Sub-100 ps recovery prevents data corruption during 50 Mbps signal transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230HT1G | 30 V VR, 200 mA IF, RthJS = 350 K/W, same SOT23 package | Lower voltage rating limits use in 12 V systems; higher current supports higher-power sensing. | Select when higher IF and lower thermal resistance are prioritized over 40 V margin. |
| Vishay SD103A-TP | 40 V VR, 200 mA IF, CT = 10 pF, VF = 450 mV @ 10 mA | Higher capacitance degrades >50 MHz performance; better current handling for power monitoring. | Prefer for DC-biased power rail monitoring where speed is secondary to robustness. |
Compared with BAS40-05, NSR0230HT1G trades 10 V reverse margin for 67% higher current and 26% lower thermal resistance, while SD103A-TP retains 40 V rating but sacrifices high-frequency response due to doubled capacitance - making BAS40-05 optimal for RF-critical, thermally constrained, and automotive-qualified designs.
Availability
BAS40-05 is available at Aetrix Electronics and suitable for RF detection, power rail clamping, DC-DC feedback sensing, and high-speed logic level translation requiring stable component supply across automotive, industrial, and wireless infrastructure programs.
Supply support for BAS40-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BAS40 series belongs to Nexperia's general-purpose Schottky diode product line, engineered for high-speed switching, low-loss detection, and robust AEC-Q101-compliant operation in space-constrained, thermally demanding environments.
FAQ
Is BAS40-05 AEC-Q101 qualified?
Yes, BAS40-05 is qualified per AEC-Q101 Rev D for stress testing including HTSL, TCT, and ESD. This certification applies specifically to the SOT23-packaged BAS40-05 variant, confirming suitability for automotive under-hood and cabin applications up to 150 °C junction temperature.
What is the maximum continuous forward current at 85 °C ambient?
At 85 °C ambient, the maximum continuous forward current is derated to approximately 75 mA, based on its 475 K/W junction-to-solder-point thermal resistance and 150 °C maximum junction temperature limit. This assumes a standard 2-layer PCB with 25 mm² 1-oz copper pad beneath the SOT23 package.
Can BAS40-05 replace BAS40-05W in a design?
No - BAS40-05W uses SOT323 packaging with RthJS = 205 K/W and different thermal derating curves. Swapping packages changes thermal performance, board layout requirements, and mechanical fit. The "W" suffix denotes a distinct package variant, not a functional revision.
Does BAS40-05 exhibit significant VF variation over temperature?
Yes - VF decreases by ~1.5 mV/°C over −55 °C to +150 °C, dropping from ~550 mV at −40 °C to ~320 mV at +150 °C at 10 mA. This negative TC must be accounted for in precision voltage reference or detector circuits operating across wide temperature ranges.
BAS 40-05 B5003 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 1 µA @ 30 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
BAS 40-05 B5003 FAQ
1.How can I place an order for BAS 40-05 B5003 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS 40-05 B5003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS 40-05 B5003 reliable?
The price and inventory of BAS 40-05 B5003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS 40-05 B5003 is usually 5 days.
3.What payment methods are accepted for BAS 40-05 B5003?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS 40-05 B5003 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS 40-05 B5003?
BAS 40-05 B5003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS 40-05 B5003 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS 40-05 B5003?
For technical support, including BAS 40-05 B5003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS 40-05 B5003 requirements.
6.How does Aetrix verify that BAS 40-05 B5003 is sourced from the original manufacturer or authorized distributors?
All BAS 40-05 B5003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS 40-05 B5003 meets industry standards.
7.What is the process for return or replacement of BAS 40-05 B5003?
All BAS 40-05 B5003 units undergo pre-shipment inspection (PSI). If there is an issue with BAS 40-05 B5003, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS 40-05 B5003 part is unused and in its original packaging.
Return procedure for BAS 40-05 B5003:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS 40-05 B5003 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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