Infineon Technologies BAS4005E6433HTMA1

Overview

BAS4005E6433HTMA1 from Vishay is a silicon Schottky diode in SOT23 package, configured as a single high-speed switching diode with 40 V reverse voltage rating, 120 mA forward current, and 3–5 pF capacitance at 0 V/1 MHz. It serves in voltage clamping and high-level signal detection circuits for automotive infotainment power rails.

For engineers reviewing the BAS4005E6433HTMA1 datasheet, BAS4005E6433HTMA1 pinout, BAS4005E6433HTMA1 application, or BAS4005E6433HTMA1 equivalent, key selection criteria include low forward voltage (310–720 mV at 1–40 mA), fast recovery time (≤100 ps), AEC-Q101 qualification, thermal resistance (R_thJS ≤ 275 K/W), and RoHS-compliant lead-free packaging.

Technical Context

This Schottky diode uses a planar epitaxial construction to achieve low forward voltage drop and minimal charge carrier lifetime (τ_rr ≤ 100 ps), enabling operation in high-frequency switching and signal mixing applications up to ~1 GHz. Its low junction capacitance (typ. 3 pF) and differential forward resistance (typ. 10 Ω at 10 kHz) support stable RF detector and clamp performance.

The device is rated for continuous operation from –55 °C to +150 °C, with junction temperature limited to 150 °C and thermal resistance from junction to soldering point ≤275 K/W (SOT23 package). Reverse leakage remains ≤1 µA at 30 V and 25 °C, ensuring reliable voltage clamping in noisy automotive environments.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount plastic package with gull-wing leads, footprint compatible with JEDEC TO-236AB, suitable for automated placement and reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and SD103ATW-7-F, BAS4005E6433HTMA1 offers optimal balance of 40 V standoff, ultra-low V_F (310 mV min), and sub-5 pF capacitance-making it uniquely suited for low-voltage, high-bandwidth clamping where both voltage margin and signal fidelity are constrained.

Availability

BAS4005E6433HTMA1 is available at Aetrix Electronics and suitable for automotive infotainment, USB interface protection, and RF signal detection applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101 compliance.

Supply support for BAS4005E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with design and manufacturing facilities across Asia, Europe, and the Americas.

This device belongs to Vishay's BAS40 family of high-speed Schottky diodes, engineered specifically for automotive-grade signal conditioning, ESD protection, and RF detection where low capacitance, fast recovery, and AEC-Q101 reliability are mandatory.

FAQ

Is BAS4005E6433HTMA1 pin-compatible with BAS40-05 or BAS40-05W?

Yes - all three share the SOT23 package and single-diode anode-cathode configuration with identical pin 1 (anode), pin 2 (cathode), and pin 3 (NC). BAS40-05 has lower thermal capability (T_S ≤ 31 °C), while BAS40-05W improves thermal resistance (T_S ≤ 98 °C); BAS4005E6433HTMA1 matches the standard BAS40-05 thermal profile and marking convention.

What is the maximum allowable junction temperature during pulsed operation?

The absolute maximum junction temperature remains 150 °C regardless of pulse duration. For repetitive pulses, derating follows the R_thJS vs. t_p curves in Vishay's Application Note AN077 - at 100 µs pulse width with 1% duty cycle, junction temperature rise is limited to ~27 °C above ambient for 120 mA peak current.

Does BAS4005E6433HTMA1 support bidirectional ESD protection?

No - it is a unidirectional Schottky diode. For bidirectional ESD protection, two devices must be connected in series opposition (anode-to-anode or cathode-to-cathode), or a dedicated TVS array like Vishay's ESD9X5.0ST5G should be used instead.

How does its forward voltage compare across temperature?

V_F decreases by approximately –1.5 mV/°C from 25 °C to 125 °C at fixed I_F = 10 mA. At 125 °C, V_F is ~295 mV (vs. 310 mV at 25 °C), improving efficiency in high-temp automotive environments without compromising clamping threshold stability.