Diodes Incorporated BAS40-05Q-7-F

Overview

BAS40-05Q-7-F from Diodes Incorporated is a 40 V, 200 mA surface-mount Schottky barrier diode in SOT23 package, featuring 380 mV forward voltage at 1 mA, 5.0 ns reverse recovery time, and PN junction guard ring for transient/ESD protection-used in automotive power rail clamping and low-loss DC-DC converter freewheeling paths.

For engineers reviewing the BAS40-05Q-7-F datasheet, BAS40-05Q-7-F pinout, BAS40-05Q-7-F application, or BAS40-05Q-7-F equivalent, key selection criteria include reverse breakdown voltage (40 V), low VF at light load (380 mV @ 1 mA), ultrafast trr (5.0 ns), AEC-Q101 qualification, and SOT23 thermal resistance (357 °C/W).

Technical Context

This Schottky diode uses a platinum-silicide or similar low-barrier metal-semiconductor junction to achieve sub-400 mV forward drop at 1 mA while maintaining 40 V reverse blocking capability. Its guard ring structure isolates the active junction from surface contamination and edge breakdown, enabling stable operation under ESD stress per IEC 61000-4-2.

The device operates across –55 °C to +125 °C with 350 mW power dissipation on FR-4 board and exhibits 4.0–5.0 pF junction capacitance at 0 V bias-critical for high-frequency rectification and RF detector applications where capacitive loading must remain below 5 pF.

Key Specifications

Pinout & Package

Package: SOT23 (Standard), 3-terminal surface-mount plastic package with matte tin-plated alloy 42 leadframe; moisture sensitivity level 1 per J-STD-020; weight ≈ 0.008 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with SBAT54LT1G and NSR0230HT1G, BAS40-05Q-7-F uniquely combines AEC-Q101 qualification, 40 V rating with 380 mV low-light-load VF, and integrated guard ring-making it optimal for automotive clamping and precision low-current rectification where reliability and parametric consistency are critical.

Availability

BAS40-05Q-7-F is available at Aetrix Electronics and suitable for automotive power rail clamping, USB port ESD protection, and low-power DC-DC freewheeling requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for BAS40-05Q-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS40Q series belongs to Diodes' AEC-Q101-qualified Schottky diode product line, engineered specifically for automotive body electronics, infotainment power supplies, and industrial control systems demanding high-reliability, low-VF rectification in compact SOT23 packages.

FAQ

Is BAS40-05Q-7-F pin-compatible with BAS40-05-7-F?

Yes. Both share identical SOT23 pinout (Anode–Cathode–NC), same mechanical dimensions, and identical electrical specifications. The "Q" suffix denotes AEC-Q101 qualification and PPAP capability-no circuit-level changes affect layout or routing.

What is the maximum operating temperature for continuous use?

The junction temperature range is –55 °C to +125 °C. At ambient temperatures up to +85 °C with standard FR-4 PCB layout, the device sustains full 200 mA current without derating; above that, power dissipation must follow the published derating curve (350 mW at 25 °C, linearly reduced to 0 mW at 125 °C).

Does BAS40-05Q-7-F require special soldering profiles?

No. It is rated for moisture sensitivity level 1 (MSL-1) per J-STD-020 and supports standard reflow profiles including IPC/JEDEC J-STD-020 Rev. E. Lead-free reflow peak temperature up to 260 °C is permitted; no pre-bake is required due to its MSL-1 classification.

How does the PN junction guard ring improve ESD performance?

The guard ring surrounds the active Schottky junction to prevent premature edge breakdown during ESD events. It increases HBM ESD rating to >8 kV by distributing electric field stress away from the junction periphery-verified per AEC-Q101 stress tests and confirmed in Diodes' internal qualification reports.