Infineon Technologies BAS4005WH6327XTSA1

Overview

BAS4005WH6327XTSA1 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a common cathode dual diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW total power dissipation at TS ≤ 31 °C, used for high-speed switching and voltage clamping in automotive signal conditioning circuits.

For engineers reviewing the BAS4005WH6327XTSA1 datasheet, BAS4005WH6327XTSA1 pinout, BAS4005WH6327XTSA1 application, or BAS4005WH6327XTSA1 equivalent, key selection criteria include VF matching (≤20 mV at IF = 10 mA), low CT (3 pF typ. at VR = 0 V, f = 1 MHz), fast trr (≤100 ps), AEC-Q101 qualification, and thermal resistance RthJS ≤ 475 K/W.

Technical Context

This dual common-cathode Schottky diode enables independent anode routing for bidirectional clamping or parallel path redundancy while maintaining matched forward voltage characteristics across both diodes. Its low differential forward resistance (10 Ω typ. at 10 kHz) supports high-frequency signal integrity in RF detector and mixer stages.

The device operates across –55 °C to +150 °C with junction temperature limited to 150 °C, and its 100 ps charge carrier lifetime ensures minimal reverse recovery distortion in fast-switching applications such as level translation and transient suppression.

Key Specifications

Pinout & Package

Package: SOT323 - surface-mount plastic package with 3 terminals, optimized for high-density PCB layouts and automated assembly; footprint compatible with JEDEC TO-236AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAS40-05W and NSR0230HT1G, BAS4005WH6327XTSA1 uniquely delivers AEC-Q101 qualification, verified ∆VF ≤ 20 mV, and SOT323 dual-common-cathode integration-making it the sole choice for automotive differential clamping and RF detector matching where both reliability and electrical symmetry are mandatory.

Availability

BAS4005WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive CAN protection, RF detector design, high-speed logic level shifting, and redundant voltage reference clamping requiring stable component supply and full AEC-Q101 compliance.

Supply support for BAS4005WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to Infineon's BAS40 family of high-speed Schottky diodes designed specifically for AEC-Q101-compliant automotive signal conditioning, ESD protection, and RF interface applications demanding low capacitance and matched performance.

FAQ

What is the maximum junction temperature and how does it affect continuous operation?

The maximum junction temperature is 150 °C. Operation above this limit risks permanent degradation of the Schottky barrier. At TA = 25 °C, the device supports 120 mA continuous forward current only if the soldering point temperature remains ≤31 °C-requiring careful PCB copper pour design and thermal vias to maintain RthJS ≤475 K/W.

Is BAS4005WH6327XTSA1 suitable for bidirectional ESD protection on differential pairs?

Yes-it is configured as a common-cathode dual diode, allowing each anode to clamp independently to the shared cathode rail. This supports true bidirectional clamping on differential lines like CAN or USB D+/D− when the cathode is tied to a stable reference (e.g., VCC or split rail), provided layout minimizes mutual inductance between anode traces.

How does the 20 mV VF matching specification impact circuit performance?

The ∆VF ≤ 20 mV ensures that both diodes switch within a tightly bounded voltage window, critical for applications like RF envelope detection or differential clamping where mismatch would cause amplitude asymmetry, DC offset, or timing skew. It reflects factory binning and is guaranteed across the full operating temperature range.

Can this diode replace BAS40-05 in existing designs?

Yes-BAS4005WH6327XTSA1 shares the same SOT323 package, common cathode dual configuration, and identical marking "45s". It improves upon BAS40-05 with AEC-Q101 qualification and guaranteed VF matching, but requires verification that the lower thermal limit (TS ≤ 31 °C vs. BAS40-05's TS ≤ 31 °C) aligns with the target PCB's thermal design.