Diodes Incorporated BAS40-06-7-F
- Part No.:
- BAS40-06-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS40-06-7-F.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT233
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BAS40-06-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT23 package, rated for 40 V peak reverse voltage, 200 mA continuous forward current, and 380 mV typical forward voltage at 1 mA. It features fast 5.0 ns reverse recovery time, 4.0 pF total capacitance at 0 V, and PN junction guard ring for transient/ESD protection-used in high-frequency switching and low-loss signal routing in portable power management.
For engineers reviewing the BAS40-06-7-F datasheet, BAS40-06-7-F pinout, BAS40-06-7-F application, or BAS40-06-7-F equivalent, key selection criteria include its low VF at low IF, sub-5 ns trr, SOT23 thermal resistance (357 °C/W), RoHS-compliant matte tin plating, and AEC-Q101 qualification of the Q-grade variant.
Technical Context
This Schottky diode uses a planar epitaxial structure with integrated PN junction guard ring to suppress edge breakdown and improve ESD robustness without compromising switching speed. Its low barrier height enables 380 mV VF at 1 mA while maintaining 200 nA typical IR at 30 V reverse bias.
The device operates across –55 °C to +125 °C and derates linearly above 25 °C ambient, delivering 350 mW power dissipation on FR-4 with recommended pad layout. Total capacitance remains stable below 5.0 pF up to 30 V reverse bias, supporting RF detector and high-speed clamp applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum DC blocking voltage before avalanche; sets upper limit for clamping and rectification in 3.3 V–24 V systems. |
| IF Continuous | 200 mA - Sustained forward current capability; supports load-switching and OR-ing in compact DC-DC output stages. |
| VF Max | 1.0 V @ 40 mA - Low conduction loss ensures minimal voltage drop in battery-fed signal paths and level-shifting circuits. |
| trr | 5.0 ns - Enables operation up to ~70 MHz in snubbing and high-frequency demodulation without tail current issues. |
| CT | 4.0–5.0 pF @ 0 V - Low junction capacitance preserves signal integrity in RF detector and sampling gate designs. |
| IR Max | 200 nA @ 30 V - Ensures negligible leakage in precision bias networks and high-impedance sensor interfaces. |
Pinout & Package
Package: SOT23 (Standard), 3-terminal surface-mount plastic package per JEDEC TO-236AB; dimensions: 2.90 mm × 1.30 mm × 1.025 mm; weight ≈ 0.008 g; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to lower-potential node in rectifier/clamp; polarity-marked side on top view. |
| Cathode (Pin 2) | Forward current exit / reverse blocking terminal | Connected to higher-potential node; ties to ground or supply rail in protection circuits. |
| No-Connect (Pin 3) | Internal die attach pad (non-bonded) | Thermally conductive but electrically isolated; used for mechanical stability and heat spreading on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 380 mV typical at 1 mA - reduces conduction loss in low-current bias and sensing paths. |
| Fast switching | 5.0 ns reverse recovery - minimizes switching distortion in RF envelope detection and pulse shaping. |
| PN junction guard ring | Integrated edge termination - improves ESD robustness (HBM > 8 kV) and transient immunity without added external components. |
| Lead-free & RoHS 3 compliant | Matt tin finish over Alloy 42 leadframe - meets global environmental regulations and reflow compatibility (J-STD-020 Level 1). |
Applications
| RF Signal Detector | USB Port Protection |
|---|---|
|
Use Scenario: Demodulating AM signals or detecting RF envelope in 2.4 GHz ISM-band receivers. IC Role / Device Role / Timing Role: Schottky detector diode in passive envelope follower circuit. Use Value: 4.0 pF CT and 5.0 ns trr preserve high-frequency response; 380 mV VF enables sensitivity down to –20 dBm input. |
Use Scenario: Reverse-polarity and ESD protection on USB 2.0 VBUS line in portable accessories. IC Role / Device Role / Timing Role: Low-capacitance clamp diode between VBUS and GND. Use Value: 200 nA IR prevents standby drain; guard ring withstands ±8 kV HBM ESD pulses without degradation. |
| Low-Voltage OR-ing | High-Speed Logic Clamp |
|
Use Scenario: Dual-supply redundancy in 3.3 V FPGA I/O banks or microcontroller backup rails. IC Role / Device Role / Timing Role: Passive OR-ing diode replacing MOSFET-based ideal diodes. Use Value: 1.0 V VF max at 40 mA limits voltage drop to <3% of 3.3 V rail; SOT23 footprint saves board space. |
Use Scenario: TTL/CMOS input protection against overshoot in industrial control I/O modules. IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting input to VCC + 0.3 V. Use Value: Sub-5 ns trr prevents latch-up during nanosecond transients; 40 V VRRM covers 24 V system surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR0230HT1G | 30 V VRRM, 200 mA IF, 420 mV VF @ 10 mA, 10 pF CT | Lower voltage rating; higher capacitance limits RF use above 100 MHz. | Select when cost sensitivity outweighs RF performance and 40 V margin is unnecessary. |
| RB520S-30T1G | 30 V VRRM, 200 mA IF, 340 mV VF @ 1 mA, 5.5 pF CT, 10 ns trr | Higher trr and CT reduce high-frequency fidelity; optimized for general-purpose rectification. | Prefer for low-noise analog biasing where speed is secondary to ultra-low VF. |
Compared with NSR0230HT1G and RB520S-30T1G, BAS40-06-7-F delivers superior high-frequency response (5 ns trr, 4 pF CT) and higher reverse voltage margin (40 V), making it optimal for RF detection and fast transient clamping where both speed and robustness are critical.
Availability
BAS40-06-7-F is available at Aetrix Electronics and suitable for RF detector design, USB port protection, low-voltage OR-ing, and high-speed logic clamp applications requiring stable component supply, consistent SOT23 form factor, and full RoHS 3 compliance.
Supply support for BAS40-06-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
BAS40-06-7-F belongs to Diodes' high-speed Schottky diode product line, engineered for low-loss signal routing, ESD-hardened interface protection, and compact power management in space-constrained consumer and industrial electronics.
FAQ
Is BAS40-06-7-F AEC-Q101 qualified?
No - only the Q-grade variant (BAS40-06Q-7-F) is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949-certified facilities. The standard BAS40-06-7-F is intended for commercial and industrial applications, not automotive safety-critical systems.
What is the maximum operating temperature for BAS40-06-7-F?
The device operates from –55 °C to +125 °C junction temperature. At 25 °C ambient, it supports 350 mW power dissipation; derating begins linearly above 25 °C, reaching zero dissipation at 125 °C ambient on FR-4 with recommended pad layout.
Does BAS40-06-7-F have a built-in ESD protection structure?
Yes - it integrates a PN junction guard ring that provides inherent transient suppression and ESD robustness. Typical HBM ESD rating exceeds 8 kV, eliminating need for external TVS diodes in many low-energy interface protection schemes.
Can BAS40-06-7-F replace BAS40-04-7-F or BAS40-05-7-F in a design?
Yes - all three share identical SOT23 package, electrical ratings (40 V VRRM, 200 mA IF), and thermal specs. Differences are limited to date-code marking and internal process optimization; no functional or reliability impact has been documented across these variants.
BAS40-06-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
BAS40-06-7-F FAQ
1.How can I place an order for BAS40-06-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40-06-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40-06-7-F reliable?
The price and inventory of BAS40-06-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-06-7-F is usually 5 days.
3.What payment methods are accepted for BAS40-06-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-06-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40-06-7-F?
BAS40-06-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40-06-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40-06-7-F?
For technical support, including BAS40-06-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-06-7-F requirements.
6.How does Aetrix verify that BAS40-06-7-F is sourced from the original manufacturer or authorized distributors?
All BAS40-06-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-06-7-F meets industry standards.
7.What is the process for return or replacement of BAS40-06-7-F?
All BAS40-06-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-06-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40-06-7-F part is unused and in its original packaging.
Return procedure for BAS40-06-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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