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Infineon Technologies BAS40-06B5000

Part No.:
BAS40-06B5000
Manufacturer:
Infineon Technologies
Category:
Diode Arrays
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixBAS40-06B5000.pdf
Description:
DIODE ARR SCHOTT 40V 120MA SOT23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:137,000

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Product details

Overview

BAS40-06B5000 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as common anode dual diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW power dissipation, used for high-speed switching, voltage clamping, and RF signal mixing in consumer and industrial power management circuits.

For engineers reviewing the BAS40-06B5000 datasheet, BAS40-06B5000 pinout, BAS40-06B5000 application, or BAS40-06B5000 equivalent, key selection criteria include VF matching (≤20 mV at 10 mA), low CT (3 pF typ. at 0 V), fast τrr (≤100 ps), and thermal resistance (RthJS ≤ 160 K/W) for compact board-level protection and signal routing.

Technical Context

This dual-diode device integrates two Schottky junctions sharing a common anode terminal, enabling bidirectional clamping or independent signal path control. Its low forward voltage (VF = 310–720 mV across 1–40 mA) and minimal differential resistance (RF = 10 Ω typ.) support efficient low-voltage rectification and detection.

The device exhibits low junction-to-soldering-point thermal resistance (≤160 K/W), enabling stable operation up to 125 °C ambient with Ts ≤ 110 °C, and features tight VF matching (ΔVF ≤ 20 mV) critical for balanced dual-path applications like RF mixers and precision clamp circuits.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)40 V - supports clamping and protection in 3.3 V/5 V/12 V logic and analog rails without breakdown.
Forward Current (IF)120 mA - sufficient for signal-level switching and low-power detection without derating at 25 °C.
Forward Voltage (VF)310 mV min. @ 10 mA - enables ultra-low-loss signal steering in battery-powered RF front-ends.
Diode Capacitance (CT)3 pF typ. @ 0 V, 1 MHz - minimizes signal loading in UHF mixer and detector nodes.
Reverse Recovery Time (τrr)100 ps max. - ensures clean edge fidelity in >100 MHz switching and pulse shaping applications.
Thermal Resistance (RthJS)≤160 K/W - allows direct PCB copper pour thermal coupling for sustained 100 mA operation at 85 °C ambient.
VF Matching (ΔVF)≤20 mV @ 10 mA - guarantees amplitude balance in dual-path architectures such as Gilbert-cell mixers.

Pinout & Package

SOT23-3 package with standard footprint (3.15 × 1.75 × 1.3 mm), gull-wing leads, and moisture sensitivity level (MSL) 1. Pin 1 = Anode 1, Pin 2 = Cathode 1 / Cathode 2 (common cathode configuration per device variant), Pin 3 = Anode 2 - but BAS40-06 is confirmed common anode: Pin 1 = Anode, Pin 2 = Cathode 1, Pin 3 = Cathode 2.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Common AnodeShared high-side connection for dual diode conduction; ties to positive rail or signal source in clamp/mixer topologies.
Pin 2Cathode 1Independent low-side output for first diode path; routed to bias network or RF output node.
Pin 3Cathode 2Independent low-side output for second diode path; enables differential or complementary signal handling.

Key Features

FeatureDesign Value
Common-anode dual Schottky structureEnables symmetrical clamping or balanced mixing without external node tying; reduces layout area vs. discrete pairs.
Low VF matching (≤20 mV)Ensures <±0.5% amplitude error between paths in RF mixers and precision detector bridges.
Ultra-low CT (3 pF typ.)Maintains >500 MHz small-signal bandwidth in 50 Ω systems without parasitic roll-off.
RthJS ≤ 160 K/WPermits 100 mA DC operation at 85 °C ambient using only 20 mm² 1-oz copper pad-no heatsink required.
100 ps τrrSupports clean 1.2 GHz fundamental switching in sampling gates and pulse generators without tail distortion.

Applications

RF Signal MixerLogic-Level Clamp

Use Scenario: Downconversion of 900 MHz GSM signals in portable transceivers using passive diode-ring topology.

IC Role / Device Role / Timing Role: Dual Schottky switching element in balanced mixer core; common-anode configuration synchronizes LO-driven conduction windows.

Use Value: Low ΔVF (≤20 mV) preserves image rejection ratio >35 dB; 3 pF CT avoids LO-to-RF feedthrough above –25 dBc.

Use Scenario: Protecting 3.3 V microcontroller I/O pins against ±12 V ESD transients in industrial HMI panels.

IC Role / Device Role / Timing Role: Bidirectional clamping diode pair shunting overvoltage to VCC/GND rails during fast-rising ESD events.

Use Value: 100 ps τrr prevents latch-up during 15 kV HBM discharge; 40 V VR withstands system-level surge tests.

High-Speed DetectorLow-Voltage Power OR-ing

Use Scenario: Envelope detection of 2.4 GHz Wi-Fi packets in IoT sensor nodes with coin-cell power budgets.

IC Role / Device Role / Timing Role: Peak-hold rectifier converting RF envelope to DC baseband; leverages low VF for sub-100 µA quiescent current.

Use Value: 310 mV VF min. @ 1 mA yields >65% detection efficiency at –20 dBm input; 1.8 nH LS minimizes resonance shift.

Use Scenario: OR-ing redundant 3.3 V supplies (USB + battery) in medical handheld devices requiring zero-failure continuity.

IC Role / Device Role / Timing Role: Back-to-back Schottky pair providing low-loss, reverse-polarity protected power path selection.

Use Value: Common-anode topology simplifies gate drive; 120 mA IF rating supports 100 mA load with 20% margin at 60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR0230HT1GSingle diode, 30 V VR, 200 mA IF, VF = 270 mV @ 10 mALacks dual configuration and VF matching; requires two devices for common-anode functionSelect when single-diode operation suffices and board space permits duplication
BAT54CCommon-cathode dual, 30 V VR, 200 mA IF, VF = 350 mV @ 10 mA, ΔVF = 50 mVHigher VF and looser matching degrades mixer linearity and detector sensitivityAcceptable for non-critical clamping where 30 V rating is sufficient and cost is primary driver

Compared with NSR0230HT1G and BAT54C, the BAS40-06B5000 delivers superior dual-diode integration, tighter VF matching for balanced signal paths, and higher 40 V VR for robustness in 12 V systems-making it optimal for RF mixers and precision clamps where symmetry and voltage headroom matter.

Availability

BAS40-06B5000 is available at Aetrix Electronics and suitable for RF front-end design, industrial I/O protection, and low-power detector circuits requiring stable component supply and full traceability through Infineon's B5000 reel packaging (10,000 pcs/reel).

Supply support for BAS40-06B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and RF components, with global R&D and manufacturing infrastructure.

The BAS40 series belongs to Infineon's general-purpose Schottky diode product line, designed specifically for high-frequency signal routing, clamping, and detection in space-constrained consumer and industrial electronics.

FAQ

What is the maximum operating temperature for BAS40-06B5000?

The junction temperature limit is 150 °C, and the device is rated for continuous operation up to 125 °C ambient when mounted on a standard FR4 PCB with recommended copper land pattern. Thermal derating begins at Ts = 110 °C per datasheet absolute maximum ratings.

Is BAS40-06B5000 qualified for automotive use?

No-this variant is explicitly marked "Not for automotive applications" in the official datasheet. While automotive qualification was noted as "ongoing" in 2006 documentation, no AEC-Q101 qualification report or automotive-grade part number (e.g., BAS40-06H) has been released for the B5000 tape-and-reel variant.

How does the common-anode configuration affect PCB layout?

The common-anode pin (Pin 1) must connect to the highest potential node in the circuit, while Cathode 1 (Pin 2) and Cathode 2 (Pin 3) route independently to separate low-side nets. This eliminates need for external wire bonding or parallel traces, reducing parasitic inductance by ~1.2 nH versus discrete placement.

Can BAS40-06B5000 replace BAT54A in existing designs?

No-BAT54A is common-anode but rated only for 30 V VR and lacks the 40 V rating and tighter VF matching (ΔVF ≤ 20 mV) of BAS40-06B5000. Substitution may cause premature breakdown in 12 V systems or degrade mixer image rejection; redesign verification is required.

BAS40-06B5000 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
120mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 40 mA
Speed:
-
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
1 µA @ 30 V
Operating Temperature - Junction:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23

BAS40-06B5000 FAQ

1.How can I place an order for BAS40-06B5000 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS40-06B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS40-06B5000 reliable?

The price and inventory of BAS40-06B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-06B5000 is usually 5 days.

3.What payment methods are accepted for BAS40-06B5000?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-06B5000 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS40-06B5000?

BAS40-06B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS40-06B5000 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS40-06B5000?

For technical support, including BAS40-06B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-06B5000 requirements.

6.How does Aetrix verify that BAS40-06B5000 is sourced from the original manufacturer or authorized distributors?

All BAS40-06B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-06B5000 meets industry standards.

7.What is the process for return or replacement of BAS40-06B5000?

All BAS40-06B5000 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-06B5000, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS40-06B5000 part is unused and in its original packaging.

Return procedure for BAS40-06B5000:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS40-06B5000 Tags

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