Infineon Technologies BAS4006E6433HTMA1

Overview

BAS4006E6433HTMA1 from Vishay Semiconductor is a silicon Schottky diode in SOT23 package configured as a common anode dual diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW power dissipation at TS ≤ 56 °C, used for high-speed switching and voltage clamping in automotive signal conditioning circuits.

For engineers reviewing the BAS4006E6433HTMA1 datasheet, BAS4006E6433HTMA1 pinout, BAS4006E6433HTMA1 application, or BAS4006E6433HTMA1 equivalent, key selection criteria include VF matching (≤20 mV at IF = 10 mA), low CT (3 pF typ. at VR = 0 V, f = 1 MHz), fast trr (≤100 ps), AEC-Q101 qualification, and thermal resistance RthJS ≤ 375 K/W.

Technical Context

This dual Schottky diode integrates two independent anode-connected diodes sharing one cathode terminal, enabling bidirectional clamping or parallel current handling without cross-conduction. Its low forward voltage (VF = 310–720 mV across 1–40 mA) and minimal charge carrier lifetime (τrr ≤ 100 ps) support sub-nanosecond switching in RF detector and high-frequency rectifier stages.

The device operates across –55 °C to +150 °C with junction temperature limited to 150 °C, and its SOT23 package provides validated thermal performance under pulsed conditions (IFSM = 200 mA, t ≤ 10 ms). Reverse leakage remains ≤1 µA at VR = 30 V and TA = 25 °C, ensuring stable biasing in precision analog front-ends.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package with gull-wing leads, 1.3 mm × 2.9 mm footprint, 1.1 mm height, and lead-free (RoHS-compliant) terminations. Thermal pad not present; soldering profile aligned with IPC/JEDEC J-STD-020D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode clamping applications.

Compared with BAS4006E6433HTMA1, NSS40201MR6T1G increases component count and parasitic capacitance, while SD103ATW-7-F shifts clamping reference point and degrades high-frequency response-making the BAS4006E6433HTMA1 optimal for compact, anode-referenced, GHz-range protection.

Availability

BAS4006E6433HTMA1 is available at Aetrix Electronics and suitable for automotive ECU design, RF sensor interface development, and high-speed test equipment requiring stable component supply with full traceability and AEC-Q101 compliance documentation.

Supply support for BAS4006E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Semiconductor is a global manufacturer specializing in discrete semiconductors and passive components, with core expertise in power management, sensing, and signal conditioning technologies.

BAS40 series belongs to Vishay's high-speed Schottky diode product line, engineered specifically for automotive-grade transient protection, RF mixing, and precision clamping in harsh-environment electronics.

FAQ

What is the maximum allowable junction temperature for BAS4006E6433HTMA1?

The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks irreversible degradation of the Schottky barrier and increased IR. Derating is required above TA = 85 °C per the IF vs. TS curves, with full-rated IF = 120 mA only permissible below TS = 56 °C.

Is BAS4006E6433HTMA1 suitable for use in 5 V USB data line ESD protection?

No - BAS4006E6433HTMA1 is not rated for IEC 61000-4-2 ESD protection. It lacks integrated TVS structure and has no specified contact discharge rating. Its 1 µA IR at VR = 30 V and 40 V VR make it unsuitable as primary USB line protector; dedicated ESD arrays like Vishay VEML6030X01 are recommended instead.

How does the common-anode configuration affect PCB layout in differential signal paths?

The common-anode topology allows symmetrical placement of both diodes relative to a shared cathode ground net, minimizing loop area and inductive imbalance. This reduces common-mode noise coupling in differential receivers. Layout must maintain equal trace length and impedance from each anode to its respective signal line, with cathode routed directly to low-inductance ground plane.

Can BAS4006E6433HTMA1 replace BAS40-06W in existing designs?

Yes - BAS4006E6433HTMA1 is the tape-and-reel packaging variant of BAS40-06, identical in electrical specs, pinout, and thermal behavior. The "W" suffix denotes wettable flank leads (for automated optical inspection), while "HTMA1" indicates standard gull-wing leads. No layout or firmware changes are needed for substitution.