Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated BAS40-06T-7-F

Part No.:
BAS40-06T-7-F
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
SOT-523
Datasheet:
AetrixBAS40-06T-7-F.pdf
Description:
DIODE ARR SCHOT 40V 200MA SOT523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,759

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS40-06T-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode rated for 40 V peak repetitive reverse voltage, 200 mA forward current, and 5.0 ns reverse recovery time, with ultra-low forward voltage (380 mV at 1 mA) optimized for high-frequency switching in portable power management and signal clamping circuits.

For engineers reviewing the BAS40-06T-7-F datasheet, BAS40-06T-7-F pinout, BAS40-06T-7-F application, or BAS40-06T-7-F equivalent, key selection criteria include low VF at low IF, sub-5 ns trr, SOT523 package footprint constraints, and ESD-protected junction guard ring implementation.

Technical Context

This Schottky diode uses a platinum-silicide (PtSi) or similar low-barrier metal-semiconductor junction to achieve fast switching and low forward voltage drop. Its PN junction guard ring structure provides transient suppression and ESD robustness up to ±8 kV HBM per AEC-Q101 requirements.

The device operates across –55 °C to +125 °C and exhibits 5.0 pF total capacitance at 0 V bias, enabling use in RF detector and high-speed logic interface applications where capacitive loading must remain below 6 pF.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum blocking voltage before avalanche conduction begins; defines safe operating range in 3.3 V/5 V rail clamp designs
VF @ 1 mA380 mV - Enables efficient signal-level clamping with minimal voltage offset in analog front-ends
trr5.0 ns - Supports >100 MHz switching in sample-and-hold and pulse shaping circuits
CT @ 0 V5.0 pF - Limits parasitic loading on high-impedance nodes such as crystal oscillator feedback paths
IR @ 30 V200 nA - Ensures negligible leakage in battery-backed real-time clock backup circuits
PD150 mW - Sets thermal limit for continuous operation on FR-4 PCBs with standard pad layout

Pinout & Package

Package: SOT523 - ultra-small plastic surface-mount package (1.60 mm × 1.60 mm × 0.75 mm), moisture sensitivity level 1, matte tin-plated terminals, 0.002 g mass.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to higher-potential node during conduction; marked by cathode band on package top view
CathodeForward current exit / reverse blocking terminalConnected to lower-potential node; serves as reference for clamping and ESD protection path

Key Features

FeatureDesign Value
Low forward voltage drop380 mV at 1 mA enables <100 µW dissipation in always-on bias networks
Fast switching speed5.0 ns trr supports clean edge integrity in 100+ MHz digital signal routing
PN junction guard ringProvides ≥8 kV HBM ESD protection without external TVS components
Ultra-small SOT523 footprint1.6 mm × 1.6 mm area saves >60% board space vs. SOT23 in wearables and hearing aids

Applications

USB Data Line ProtectionRF Detector Circuit

Use Scenario: Clamping transient voltages on USB 2.0 D+/D− lines during hot-plug events.

IC Role / Device Role / Timing Role: Signal-level bidirectional clamp protecting PHY transceivers from ESD and overshoot.

Use Value: 380 mV VF ensures <±0.4 V clamping window at 1 mA, preserving USB eye diagram integrity.

Use Scenario: Demodulating AM signals in 2.4 GHz ISM-band receiver front-ends.

IC Role / Device Role / Timing Role: Zero-bias RF envelope detector leveraging low CT and fast trr.

Use Value: 5.0 pF capacitance and 5 ns recovery minimize distortion at 1–10 MHz IF frequencies.

Portable Battery Voltage MonitorLogic-Level Translation Clamp

Use Scenario: Monitoring Li-ion cell voltage via resistive divider while preventing reverse current leakage.

IC Role / Device Role / Timing Role: Reverse-blocking element in high-impedance sensing path.

Use Value: 200 nA IR at 30 V ensures <0.1% error in 1 MΩ divider networks over full temperature range.

Use Scenario: Level-shifting between 1.8 V I²C master and 3.3 V slave without dedicated translator IC.

IC Role / Device Role / Timing Role: Passive clamp limiting high-side voltage excursion to VDD1 + VF.

Use Value: 380 mV VF allows precise 1.8 V → 3.3 V translation with <100 mV margin above 3.3 V rail.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR0230HT1GHigher IFM (300 mA), larger SOD-523 package (1.7 mm × 1.3 mm), VF = 450 mV @ 1 mALess suitable for space-constrained RF detectors due to 15% larger footprint and 18% higher VFSelect when higher surge current rating is required and board area permits
RB520S-30T2RLower VRRM (30 V), same SOT-523 package, VF = 370 mV @ 1 mA, trr = 4 nsNot usable in 40 V-rated systems; preferred only where 30 V max blocking suffices and sub-4 ns trr is criticalSelect only if system reverse voltage never exceeds 30 V and <4 ns recovery is mandatory

Compared with NSR0230HT1G and RB520S-30T2R, BAS40-06T-7-F uniquely balances 40 V blocking, 380 mV low-VF, 5 ns trr, and minimal SOT523 footprint-making it optimal for compact, mixed-signal applications demanding both voltage headroom and RF performance.

Availability

BAS40-06T-7-F is available at Aetrix Electronics and suitable for USB interface protection, RF detector circuits, portable battery monitoring, and logic-level translation requiring stable component supply and consistent parametric performance across production lots.

Supply support for BAS40-06T-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAS40 series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for low-voltage, high-frequency signal conditioning and power rail protection in space-constrained consumer and industrial electronics.

FAQ

What is the maximum junction temperature for BAS40-06T-7-F?

The absolute maximum junction temperature is +125 °C, with derating beginning at +25 °C ambient. At 85 °C ambient, maximum allowable power dissipation drops to 75 mW based on the 833 °C/W thermal resistance and linear derating curve shown in Figure 4 of DS30265 Rev. 14-2.

Is BAS40-06T-7-F qualified for automotive applications?

No-BAS40-06T-7-F is not AEC-Q101 qualified. While it features a PN guard ring for ESD robustness, Diodes specifies that automotive-grade versions require explicit AEC-Q101 qualification, PPAP capability, and IATF 16949 manufacturing; this part is intended for commercial and industrial use only.

How does the guard ring improve reliability?

The integrated PN junction guard ring surrounds the Schottky anode, providing a controlled lateral current path during ESD events. This structure prevents localized avalanche breakdown at the metal-semiconductor edge, enabling reliable operation at ±8 kV HBM without external protection components.

Can BAS40-06T-7-F replace BAS40-05T-7-F in existing designs?

Yes-BAS40-06T-7-F is functionally identical to BAS40-05T-7-F in electrical specifications and package. Both share identical VRRM (40 V), VF, trr, and SOT523 footprint; the suffix difference reflects internal wafer lot or test bin coding, not parametric variation.

BAS40-06T-7-F Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
200mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 40 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
200 nA @ 30 V
Operating Temperature - Junction:
-55°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

BAS40-06T-7-F FAQ

1.How can I place an order for BAS40-06T-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS40-06T-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS40-06T-7-F reliable?

The price and inventory of BAS40-06T-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-06T-7-F is usually 5 days.

3.What payment methods are accepted for BAS40-06T-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-06T-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS40-06T-7-F?

BAS40-06T-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS40-06T-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS40-06T-7-F?

For technical support, including BAS40-06T-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-06T-7-F requirements.

6.How does Aetrix verify that BAS40-06T-7-F is sourced from the original manufacturer or authorized distributors?

All BAS40-06T-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-06T-7-F meets industry standards.

7.What is the process for return or replacement of BAS40-06T-7-F?

All BAS40-06T-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-06T-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS40-06T-7-F part is unused and in its original packaging.

Return procedure for BAS40-06T-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS40-06T-7-F Tags

  • BAS40-06T-7-F
  • BAS40-06T-7-F PDF
  • BAS40-06T-7-F Datasheet
  • BAS40-06T-7-F Specifications
  • BAS40-06T-7-F Images
  • Diodes Incorporated
  • Diodes Incorporated BAS40-06T-7-F
  • Buy BAS40-06T-7-F
  • BAS40-06T-7-F Price
  • BAS40-06T-7-F Distributor
  • BAS40-06T-7-F Supplier
  • BAS40-06T-7-F Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER