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Nexperia USA Inc. BAS40-06W,115
- Part No.:
- BAS40-06W,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS40-06W,115.pdf
- Description:
- DIODE ARR SCHOT 40V 120MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:21,300
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Product details
Overview
BAS40-06W from Nexperia is a general-purpose dual Schottky diode in SOT323 (SC-70) package, featuring common-anode configuration, 40 V reverse voltage rating, 120 mA forward current capability, and 5 pF diode capacitance at 1 MHz - optimized for ultra high-speed switching and voltage clamping in compact DC-DC converter feedback paths and signal line protection circuits.
For engineers reviewing the BAS40-06W datasheet, BAS40-06W pinout, BAS40-06W application, or BAS40-06W equivalent, key selection criteria include its dual-common-anode topology, low 380 mV forward voltage at 1 mA, sub-1 µA reverse leakage at 30 V, 5 pF junction capacitance, and thermal resistance of 625 K/W on FR4 PCB - critical for high-frequency, space-constrained designs.
Technical Context
The BAS40-06W integrates two independent Schottky diodes sharing a single anode terminal (Pin 3), enabling compact dual-path rectification or clamping without discrete pairing. Its epitaxial silicon construction delivers fast recovery (no minority-carrier storage) and stable performance across −65 °C to 150 °C ambient range.
Designed for pulsed operation (tp ≤ 300 µs, duty δ ≤ 0.02), it maintains consistent VF characteristics from −40 °C to 125 °C and exhibits <10 µA IR at VR = 40 V, supporting reliable operation in low-power signal conditioning and transient suppression where leakage and capacitance directly impact timing integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Configuration | Dual Schottky diode, common-anode (A1/A2 shared) |
| VR (Reverse Voltage) | 40 V - supports clamping up to 36 V nominal rails with 10% margin |
| VF @ 1 mA | 380 mV - minimizes conduction loss in low-current bias and sensing paths |
| IR @ 30 V | 1 µA - ensures negligible leakage in high-impedance voltage monitor inputs |
| Cd @ 0 V, 1 MHz | 5 pF - enables >100 MHz signal path integrity in RF detector or clock clamping |
| Rth(j-a) | 625 K/W - defines thermal derating on standard FR4; limits continuous IF to ~100 mA at Tamb = 70 °C |
| Tj(max) | 150 °C - allows operation in sealed industrial enclosures without active cooling |
Pinout & Package
Package: SOT323 (SC-70), plastic surface-mount, 3-lead, 1.3 mm pitch, 2.0 mm × 1.25 mm × 0.95 mm body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (Cathode, Diode 1) | Output node for first Schottky path; connects to load or signal line requiring clamping |
| 2 | K2 (Cathode, Diode 2) | Independent output node for second Schottky path; enables dual-rail or redundancy use |
| 3 | A1/A2 (Common Anode) | Shared input node; simplifies PCB routing and reduces net count vs. discrete dual-diode layout |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | No stored charge - enables clean edge transitions in >100 MHz pulse shaping and sampling gates |
| Low leakage current | ≤1 µA at 30 V - preserves accuracy in precision voltage reference dividers and sensor bias networks |
| Low capacitance | 5 pF at 0 V - avoids signal distortion in high-Z analog front-ends and RF envelope detectors |
| High breakdown voltage | 40 V VR - accommodates 24 V industrial bus transients and 3.3/5/12 V system-level ESD clamping |
Applications
| DC-DC Converter Feedback Clamping | USB Data Line ESD Protection |
|---|---|
|
Use Scenario: Clamp feedback voltage error amplifier input during load transients or startup overshoot in buck converters. IC Role / Device Role: Dual Schottky clamp limiting FB pin voltage to ±0.3 V beyond rail using common-anode architecture. Use Value: Prevents op-amp saturation and improves transient response by eliminating latch-up risk in TLV431 or similar references. |
Use Scenario: Protect D+ and D− lines from IEC 61000-4-2 contact discharge in USB 2.0 host ports. IC Role / Device Role: Dual cathode-to-line, common-anode-to-VBUS configuration provides bidirectional clamping. Use Value: 5 pF capacitance avoids signal integrity degradation at 480 Mbps; 380 mV VF ensures low insertion loss. |
| RF Detector Output Limiting | Logic-Level Signal Translation |
|
Use Scenario: Limit peak output of logarithmic RF power detector (e.g., ADL5513) before ADC input. IC Role / Device Role: Cathode-connected to detector output, anode tied to reference voltage for precise upper/lower clipping. Use Value: Sub-400 mV VF enables accurate 0.5 V clamp threshold; low IR prevents DC offset drift over temperature. |
Use Scenario: Translate 1.8 V logic outputs to 3.3 V domain while blocking reverse current in bidirectional GPIOs. IC Role / Device Role: Two independent Schottky paths isolate directionally mismatched voltage domains with minimal forward drop. Use Value: Common-anode structure reduces footprint vs. two discrete diodes; 120 mA IF rating supports 20 mA per I/O line. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR20F40NXT5G | Same SOT-323 package; 40 V VR, but VF = 450 mV @ 1 mA (70 mV higher); Cd = 6.5 pF | Slightly higher conduction loss affects low-voltage bias networks; higher capacitance limits >80 MHz use | Prefer when supply chain diversification is required and 70 mV VF penalty is acceptable |
| Diodes Inc. BAV99W-7-F | SOT-323 package; dual series-switch topology (not common-anode); VR = 70 V; VF = 1.25 V @ 10 mA | Not pin-compatible; higher VF degrades efficiency in low-voltage clamping; 70 V VR over-spec for 24 V systems | Only suitable if common-anode topology is not required and higher reverse voltage is needed |
Compared with BAS40-06W, NSR20F40NXT5G trades marginally higher VF and capacitance for alternate sourcing, while BAV99W-7-F abandons the common-anode advantage entirely - making BAS40-06W uniquely suited for space- and loss-sensitive dual-clamp layouts.
Availability
BAS40-06W is available at Aetrix Electronics and suitable for DC-DC converter feedback clamping, USB data line ESD protection, RF detector output limiting, and logic-level signal translation requiring stable component supply, consistent marking (66% code), and full traceability to Nexperia's production lots.
Supply support for BAS40-06W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and manufacturability.
The BAS40-06W belongs to Nexperia's general-purpose Schottky diode portfolio, engineered specifically for space-constrained, high-frequency signal integrity and power management applications where low VF, low Cd, and repeatable SMT assembly are mandatory.
FAQ
Is BAS40-06W automotive qualified?
No. Per Nexperia's revision history (v.12, October 2022), BAS40-06W is explicitly designated as non-automotive qualified. It lacks AEC-Q101 stress testing and automotive-grade process controls. For automotive use, Nexperia recommends the -Q qualified variants such as BAS40-06W-Q, which undergo extended temperature cycling and humidity testing.
What is the maximum continuous forward current for BAS40-06W at 70 °C ambient?
At Tamb = 70 °C, the maximum continuous forward current is approximately 100 mA. This is derived from Rth(j-a) = 625 K/W and Tj(max) = 150 °C: ΔT = 80 K → Pdiss(max) = 80 / 625 = 0.128 W. With VF ≈ 0.5 V at 100 mA, power dissipation = 0.05 W - well within limit, confirming 100 mA is sustainable with margin.
Can BAS40-06W be used in reverse-biased Zener-like mode?
No. The BAS40-06W is a Schottky diode with no controlled reverse breakdown characteristic. Its specified VR = 40 V is an absolute maximum rating - operation above 30 V reverse bias risks irreversible avalanche damage. It must not be substituted for Zener or TVS diodes in voltage regulation or surge suppression roles.
Does the "66%" marking on BAS40-06W indicate RoHS compliance?
Yes. The "66%" top-side marking includes the manufacturing site code placeholder ("%") and conforms to Nexperia's standardized RoHS-compliant labeling per EU Directive 2011/65/EU. All BAS40-06W units shipped since 2022 carry lead-free terminations and meet JEDEC J-STD-609 Category 1 moisture sensitivity level (MSL-1).
BAS40-06W,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 40 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAS40-06W,115 FAQ
1.How can I place an order for BAS40-06W,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40-06W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40-06W,115 reliable?
The price and inventory of BAS40-06W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40-06W,115 is usually 5 days.
3.What payment methods are accepted for BAS40-06W,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40-06W,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40-06W,115?
BAS40-06W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40-06W,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40-06W,115?
For technical support, including BAS40-06W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40-06W,115 requirements.
6.How does Aetrix verify that BAS40-06W,115 is sourced from the original manufacturer or authorized distributors?
All BAS40-06W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40-06W,115 meets industry standards.
7.What is the process for return or replacement of BAS40-06W,115?
All BAS40-06W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40-06W,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40-06W,115 part is unused and in its original packaging.
Return procedure for BAS40-06W,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40-06W,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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