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Infineon Technologies BAS4006WH6327XTSA1
- Part No.:
- BAS4006WH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS4006WH6327XTSA1.pdf
- Description:
- DIODE ARR SCHOT 40V 120MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:22,762
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Product details
Overview
BAS4006WH6327XTSA1 from Infineon Technologies is a silicon Schottky diode in SOT323 package configured as a common cathode dual diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW power dissipation at TS ≤ 56 °C, used for high-speed switching and voltage clamping in automotive signal conditioning circuits.
For engineers reviewing the BAS4006WH6327XTSA1 datasheet, BAS4006WH6327XTSA1 pinout, BAS4006WH6327XTSA1 application, or BAS4006WH6327XTSA1 equivalent, key selection criteria include VF matching (≤20 mV at IF = 10 mA), low CT (3 pF typ. at VR = 0 V, f = 1 MHz), fast trr (≤100 ps), AEC-Q101 qualification, and SOT323 thermal resistance (RthJS ≤ 375 K/W).
Technical Context
This dual common-cathode Schottky diode enables independent anode routing for bidirectional clamping or parallel-path rectification while maintaining matched forward voltage characteristics across both diodes. Its low differential forward resistance (10 Ω typ. at 10 kHz) and minimal charge carrier lifetime support RF detection and high-frequency mixing applications.
The device operates across –55 °C to +150 °C with junction temperature limited to 150 °C, and its 1 µA max reverse leakage at VR = 30 V ensures stable DC bias integrity in precision analog front-ends.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Reverse Voltage) | 40 V - Maximum blocking voltage before breakdown; defines safe operating range in clamp/protect circuits. |
| IF (Forward Current) | 120 mA - Continuous DC current per diode; supports moderate-signal-level switching without derating at TA = 25 °C. |
| VF @ 10 mA | 310–450 mV - Low forward drop enables efficient clamping with minimal voltage offset in signal paths. |
| ∆VF @ 10 mA | ≤20 mV - Tight matching between dual diodes ensures balanced performance in differential or redundant configurations. |
| CT @ 0 V, 1 MHz | 3 pF typ. - Low junction capacitance preserves bandwidth in RF detector and mixer stages up to ~1 GHz. |
| trr | ≤100 ps - Ultrafast recovery enables use in >100 MHz switching and pulse shaping applications. |
| IR @ 30 V | ≤1 µA - Low leakage maintains accuracy in high-impedance sensing nodes and battery-backed circuits. |
| RthJS | ≤375 K/W - Thermal resistance from junction to soldering point; determines maximum allowable power at given board thermal design. |
Pinout & Package
Package: SOT323 - surface-mount plastic package with gull-wing leads, footprint compatible with JEDEC MO-203AA, optimized for automated assembly and moderate thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode 1 (Pin 1) | Input node for first diode | Accepts positive-going transients or signal peaks requiring clamping to cathode rail. |
| Cathode (Pin 2) | Common cathode connection | Shared return path for both diodes; must be routed to stable reference (e.g., VCC or ground depending on clamp polarity). |
| Anode 2 (Pin 3) | Input node for second diode | Enables independent clamping of second signal path or complementary input in differential receivers. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood and infotainment applications per stress test requirements. |
| Common cathode dual configuration | Allows two independent anodes to share one cathode node-ideal for dual-rail clamping or signal steering. |
| Low VF matching (≤20 mV) | Ensures consistent turn-on behavior across channels, critical for balanced detector/mixer outputs. |
| Pb-free, RoHS-compliant | Meets EU Directive 2011/65/EU; compatible with lead-free reflow profiles (J-STD-020). |
| ESD-sensitive handling | Requires IEC 61340-5-1 compliant ESD controls during assembly due to <2 kV HBM rating. |
Applications
| Automotive CAN Transceiver Protection | RF Signal Detector Stage |
|---|---|
Use Scenario: Clamping transient spikes on CAN_H/CAN_L lines during load dump or ESD events. IC Role / Device Role: Dual-diode transient voltage suppressor with common cathode tied to VCC rail. Use Value: Prevents damage to ISO 11898-compliant transceivers by limiting voltage excursions to ≤VCC + 0.45 V. | Use Scenario: Demodulating AM signals in 100–500 MHz automotive keyless entry receivers. IC Role / Device Role: Low-capacitance, low-VF envelope detector diode pair. Use Value: Delivers >30 dB dynamic range with <1 dB insertion loss due to 3 pF CT and 10 Ω RF. |
| High-Speed Logic Level Shifter | Dual-Rail Power Supply Clamp |
Use Scenario: Translating 3.3 V logic signals to 5 V domains in ADAS sensor interfaces. IC Role / Device Role: Forward-biased clamping diode protecting 5 V inputs from overvoltage. Use Value: Enables sub-10 ns response with ≤0.45 V forward drop, preserving signal edge integrity. | Use Scenario: Preventing reverse current flow between dual 3.3 V/5 V supply rails in infotainment head units. IC Role / Device Role: Back-to-back configured Schottky clamp using shared cathode node. Use Value: Blocks >99.9% reverse current at 2 V reverse bias while adding <0.5 mΩ effective series resistance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR20F40NXT5G | Single diode, SOD-523, VF = 370 mV @ 10 mA, CT = 2.5 pF, no VF matching spec | Lacks dual configuration and matching; suitable only for single-path clamping | Select when space constraints prohibit SOT323 and dual functionality is unnecessary |
| RB520S-40T1G | Dual common-cathode, SOT-23, VF = 370 mV @ 10 mA, ∆VF not specified, RthJS ≈ 400 K/W | Higher thermal resistance and unverified AEC-Q101 status limit automotive underhood use | Acceptable for industrial control boards where ambient temperature stays below 85 °C |
Compared with NSR20F40NXT5G and RB520S-40T1G, BAS4006WH6327XTSA1 uniquely combines AEC-Q101 qualification, tight VF matching, and SOT323 thermal performance-making it the only choice for dual-path automotive signal protection requiring production traceability and thermal margin.
Availability
BAS4006WH6327XTSA1 is available at Aetrix Electronics and suitable for automotive CAN protection, RF detection, logic level translation, and dual-rail power clamping requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAS4006WH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to IATF 16949.
BAS4006WH6327XTSA1 belongs to Infineon's BAS40 family of high-speed Schottky diodes designed specifically for automotive signal integrity and ESD protection in harsh-environment electronic control units.
FAQ
Is BAS4006WH6327XTSA1 pin-compatible with BAS40-06W?
Yes - both use SOT323 packaging and share identical pin 1 (Anode 1), pin 2 (Common Cathode), and pin 3 (Anode 2) assignments. However, BAS40-06W has higher thermal resistance (RthJS ≤ 106 °C/W vs. ≤375 K/W) and different derating curves, so direct substitution requires thermal validation.
What is the maximum continuous forward current per diode at 100 °C ambient?
At TA = 100 °C, the maximum continuous forward current per diode is approximately 65 mA, derived from the IF vs. TS curve for BAS40-06/BAS40-04 (TS ≤ 56 °C limit) and thermal derating slope of ~1.1 mA/°C above 25 °C ambient.
Does BAS4006WH6327XTSA1 support bidirectional ESD protection?
No - its common-cathode configuration only provides unidirectional clamping from each anode to the cathode node. For bidirectional protection, external series resistors and back-to-back diode placement or dedicated TVS arrays are required.
Can this diode be used in 2.4 GHz WiFi front-end detection?
Not effectively - although trr ≤100 ps and CT = 3 pF suggest high-frequency capability, measured RF performance degrades above 1 GHz due to package parasitics and lack of S-parameter characterization beyond 1 GHz in official documentation.
BAS4006WH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 1 µA @ 30 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323
BAS4006WH6327XTSA1 FAQ
1.How can I place an order for BAS4006WH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS4006WH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS4006WH6327XTSA1 reliable?
The price and inventory of BAS4006WH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS4006WH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAS4006WH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS4006WH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS4006WH6327XTSA1?
BAS4006WH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS4006WH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS4006WH6327XTSA1?
For technical support, including BAS4006WH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS4006WH6327XTSA1 requirements.
6.How does Aetrix verify that BAS4006WH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAS4006WH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS4006WH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAS4006WH6327XTSA1?
All BAS4006WH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAS4006WH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS4006WH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAS4006WH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS4006WH6327XTSA1 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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