Nexperia USA Inc. BAS40,215
- Part No.:
- BAS40,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS40,215.pdf
- Description:
- DIODE SCHOTTKY 40V 120MA TO236AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,902
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Product details
Overview
BAS40,215 from Nexperia is a general-purpose Schottky diode in SOT23 package, designed for ultra-high-speed switching and voltage clamping. It delivers 40 V reverse voltage rating, 120 mA forward current capability, 380 mV forward voltage at 1 mA (pulsed), 5 pF capacitance at 0 V, and AEC-Q101 qualification for automotive use.
For engineers reviewing the BAS40,215 datasheet, BAS40,215 pinout, BAS40,215 application, or BAS40,215 equivalent, key selection criteria include low VF for efficiency-critical bias networks, low Cd for RF/switching node integrity, n.c. terminal isolation in compact layouts, and thermal resistance (500 K/W) for ambient-limited SMT designs.
Technical Context
The BAS40,215 implements a planar Schottky barrier structure optimized for fast recovery (no minority-carrier storage), enabling sub-nanosecond switching in clamping and signal routing applications. Its 1 µA IR at 30 V and 10 µA at 40 V supports stable DC biasing under moderate reverse stress.
Thermal design relies on its 150 °C maximum junction temperature and FR4-mount Rth(j-a) of 500 K/W - a constraint requiring careful copper area allocation in high-duty-cycle pulsed operation. The n.c. (pin 2) eliminates parasitic coupling paths in high-frequency layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - defines maximum allowable blocking voltage before breakdown in clamp or flyback protection circuits |
| Forward Current (IF) | 120 mA continuous - sets upper limit for steady-state conduction without thermal runaway |
| Forward Voltage (VF) | 380 mV @ 1 mA pulsed - enables low-loss biasing in precision reference or logic-level translation paths |
| Reverse Current (IR) | 1 µA @ 30 V - ensures minimal leakage-induced offset in high-impedance sensing nodes |
| Capacitance (Cd) | 5 pF @ 0 V, 1 MHz - maintains signal integrity above ~30 MHz in RF detector or mixer applications |
| Junction Temp (Tj) | 150 °C max - constrains PCB copper pour and power derating in sealed automotive ECUs |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability including temperature cycling and HTRB testing |
Pinout & Package
Package: SOT23 (TO-236AB), 3-terminal surface-mount plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (A) | Forward current entry point; connects to higher-potential node in rectification or clamping |
| 2 | Not Connected (n.c.) | Internally unconnected; must be left floating or tied to ground only if required for mechanical stability |
| 3 | Cathode (K) | Forward current exit point; ties to lower-potential node or return path |
Key Features
| Feature | Design Value |
|---|---|
| High switching speed | Sub-ns recovery enabled by Schottky barrier - critical for >100 MHz signal routing and pulse shaping |
| Low leakage current | 1 µA @ 30 V - preserves accuracy in battery-backed voltage references and sensor bias networks |
| Low capacitance | 5 pF - minimizes loading on high-Z RF inputs and clock distribution lines |
| AEC-Q101 qualification | Validated for automotive underhood environments - supports deployment in ADAS camera modules and body control units |
| Small SOT23 footprint | 2.9 mm × 1.3 mm - enables dense placement in space-constrained portable and infotainment PCBs |
Applications
| Automotive Signal Clamping | High-Speed Logic-Level Translation |
|---|---|
Use Scenario: Protecting CAN transceiver I/O pins against ESD-induced overvoltage transients in vehicle networking systems. IC Role / Device Role / Timing Role: Fast-clamp diode placed between signal line and VCC/GND rails to shunt transient energy within <1 ns. Use Value: 40 V VR withstands load-dump surges; 380 mV VF ensures minimal impact on signal swing during normal operation. |
Use Scenario: Level-shifting 1.8 V GPIO signals to 3.3 V domains in microcontroller-based telematics modules. IC Role / Device Role / Timing Role: Passive bidirectional translator using Schottky forward drop to offset voltage thresholds. Use Value: Low Cd (5 pF) prevents signal edge degradation at 50+ MHz toggle rates; AEC-Q101 ensures field reliability. |
| RF Detector Input Protection | Power Supply OR'ing Diode |
Use Scenario: Shielding RF detector diodes in GNSS front-end receivers from antenna-coupled RF overload. IC Role / Device Role / Timing Role: Shunt limiter across detector input to clip RF peaks before semiconductor junction damage. Use Value: Sub-ns response captures fast RF transients; 5 pF capacitance avoids detuning 1.575 GHz L1 band matching networks. |
Use Scenario: Preventing backfeed between dual 3.3 V power rails in redundant power architectures for industrial gateways. IC Role / Device Role / Timing Role: Low-VF OR'ing diode in series with each supply path to enable seamless rail switchover. Use Value: 380 mV VF reduces voltage drop and heat generation versus standard silicon diodes; 120 mA IF supports typical SoC core rail loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSR0230HT1G | 30 V VR, 200 mA IF, VF = 450 mV @ 10 mA - higher current but lower voltage rating | Preferred where higher forward surge tolerance is needed, e.g., USB port power path | Select when system reverse stress stays below 30 V and peak IF exceeds 120 mA |
| Diodes Incorporated SD103ATW-7-F | 40 V VR, 200 mA IF, VF = 600 mV @ 10 mA - same VR but higher VF and larger SOD-123 package | Suitable for non-space-constrained industrial SMPS feedback paths | Choose when board area allows larger footprint and 220 mV higher VF is acceptable for cost optimization |
Compared with NSR0230HT1G and SD103ATW-7-F, the BAS40,215 uniquely balances 40 V blocking, ultra-low 380 mV VF at low current, and SOT23 size - making it optimal for high-density automotive signal conditioning where both voltage margin and signal fidelity matter.
Availability
BAS40,215 is available at Aetrix Electronics and suitable for automotive signal clamping, high-speed logic-level translation, and RF detector input protection requiring stable component supply and AEC-Q101 compliance.
Supply support for BAS40,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, reliable discrete, logic, and MOSFET devices, with roots in Philips and headquartered in Nijmegen, Netherlands.
The BAS40,215 belongs to Nexperia's general-purpose Schottky diode product line, engineered for robustness in automotive and industrial signal-path applications where speed, leakage, and small form factor are critical.
FAQ
Is the BAS40,215 pin 2 truly unconnected, and can it be grounded?
Yes, pin 2 is internally not connected per Nexperia's official pinning diagram and package outline. Grounding it is permissible only for mechanical anchoring or thermal relief - it must never be used as a signal or return path, as no internal bond wire or die connection exists. Doing so introduces no electrical risk but adds no functional benefit.
How does the 500 K/W thermal resistance affect real-world power dissipation?
At 25 °C ambient and 120 mA forward current with 380 mV VF, power dissipation is 45.6 mW. With Rth(j-a) = 500 K/W, junction temperature rise is ~22.8 °C - resulting in Tj ≈ 48 °C, well below the 150 °C limit. However, in enclosed automotive enclosures exceeding 85 °C ambient, derating to ≤60 mA is recommended to maintain safety margin.
Can the BAS40,215 replace the BAT54 series in existing designs?
Yes, with verification: both share SOT23-3 packaging and anode/cathode/n.c. pinout, and BAS40,215 matches BAT54's 30 V VR and 200 mA IFSM. However, BAS40,215 has higher VR (40 V vs. 30 V) and lower VF (380 mV vs. ~420 mV), offering improved surge margin and efficiency - confirm layout clearance for the slightly different die pad dimensions per Nexperia's SOT23 outline.
What does AEC-Q101 qualification specifically cover for the BAS40,215?
AEC-Q101 qualification for the BAS40,215 includes temperature cycling (−40 °C to +125 °C, 1000 cycles), high-temperature reverse bias (1000 hrs at 125 °C, 40 V), and ESD testing (HBM ≥2 kV). It certifies suitability for automotive under-hood and cabin applications but excludes life-support or safety-critical functions unless separately validated by the end customer.
BAS40,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 120mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 40 V
- Capacitance @ Vr, F:
- 5pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
- Operating Temperature - Junction:
- 150°C (Max)
BAS40,215 FAQ
1.How can I place an order for BAS40,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40,215 reliable?
The price and inventory of BAS40,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40,215 is usually 5 days.
3.What payment methods are accepted for BAS40,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40,215?
BAS40,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40,215?
For technical support, including BAS40,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40,215 requirements.
6.How does Aetrix verify that BAS40,215 is sourced from the original manufacturer or authorized distributors?
All BAS40,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40,215 meets industry standards.
7.What is the process for return or replacement of BAS40,215?
All BAS40,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40,215 part is unused and in its original packaging.
Return procedure for BAS40,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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