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Infineon Technologies BAS40B5000
- Part No.:
- BAS40B5000
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAS40B5000.pdf
- Description:
- DIODE SCHOTTKY 40V 120MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:90,000
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Product details
Overview
BAS40B5000 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as a single diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW power dissipation, used for high-speed switching, voltage clamping, and signal mixing in consumer and industrial power management circuits.
For engineers reviewing the BAS40B5000 datasheet, BAS40B5000 pinout, BAS40B5000 application, or BAS40B5000 equivalent, key selection criteria include low forward voltage (350 mV typ. at 10 mA), fast recovery time (≤100 ps), low junction-to-soldering-point thermal resistance (≤130 K/W), and SOT23 footprint compatibility with space-constrained PCB layouts.
Technical Context
This Schottky diode leverages a planar silicon process to achieve low forward voltage drop and minimal reverse recovery charge. Its 3 pF typical capacitance at 0 V and 1 MHz supports RF detection and high-frequency rectification up to ~1 GHz.
The device operates across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C. Thermal resistance RthJS ≤130 K/W enables reliable operation at 120 mA under moderate board-level heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - Supports clamping and protection in 3.3 V/5 V/12 V logic and supply rails without breakdown. |
| Forward Current (IF) | 120 mA - Sustains continuous conduction in signal-path switching and low-power DC-DC flyback snubbing. |
| Forward Voltage (VF) | 350 mV typ. @ 10 mA - Reduces conduction loss and self-heating in battery-powered and thermally sensitive designs. |
| Reverse Recovery Time (trr) | ≤100 ps - Enables clean switching in >100 MHz oscillator feedback loops and RF mixer applications. |
| Diode Capacitance (CT) | 3 pF typ. @ 0 V, 1 MHz - Minimizes signal distortion in UHF detector and sampling circuit nodes. |
| Thermal Resistance (RthJS) | ≤130 K/W - Allows direct soldering to copper pour for thermal management without external heatsink. |
| Operating Temperature | –55 °C to +125 °C - Qualified for industrial control, telecom line cards, and office equipment environments. |
Pinout & Package
SOT23-3 plastic surface-mount package with gull-wing leads; standardized footprint per JEDEC TO-236AB; 3.15 mm × 1.75 mm × 1.15 mm body dimensions; pin 1 marked by beveled corner or dot.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Input terminal for forward-biased conduction; connects to higher-potential node in clamping or rectifier paths. |
| 2 | Cathode | Output/return terminal; ties to ground or lower-potential rail; forms low-impedance path during conduction. |
| 3 | Not connected | No internal bond; electrically isolated; may be tied to thermal pad or left floating per layout requirements. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 350 mV typ. @ 10 mA - Reduces power loss in signal-level rectification and level-shifting networks. |
| Ultra-fast switching | ≤100 ps reverse recovery - Eliminates tail current in high-frequency switching nodes, preventing shoot-through in push-pull stages. |
| Low junction capacitance | 3 pF typ. @ 0 V - Preserves signal integrity in RF detector and sampling gate applications up to 1 GHz. |
| Enhanced thermal performance | RthJS ≤130 K/W - Enables stable operation at full IF on standard FR-4 with 1 oz copper. |
| High-reliability packaging | SOT23 with moisture sensitivity level 1 - Supports standard reflow profiles without baking or special handling. |
Applications
| Signal-Level Clamping | RF Signal Detection |
|---|---|
Use Scenario: Protecting ADC input pins from overvoltage transients in data acquisition systems using dual Schottky diodes to rail clamp. IC Role / Device Role / Timing Role: Voltage limiter that conducts only when input exceeds VDD + VF or falls below GND – VF. Use Value: Prevents latch-up and ESD damage while adding <1 ns propagation delay due to sub-100 ps trr. | Use Scenario: Demodulating AM signals in low-cost wireless sensor receiver front-ends operating at 433 MHz. IC Role / Device Role / Timing Role: Envelope detector diode converting RF carrier amplitude into baseband voltage. Use Value: 3 pF CT and 350 mV VF enable >85% detection efficiency with minimal harmonic distortion. |
| High-Speed Logic Level Shifting | Low-Power DC-DC Snubber |
Use Scenario: Translating 1.8 V logic outputs to 3.3 V domains in portable MCU peripherals without active translators. IC Role / Device Role / Timing Role: Passive bidirectional level translator exploiting forward conduction and reverse isolation. Use Value: Sub-ns switching ensures timing compliance in SPI/I²C lines running at ≥10 MHz. | Use Scenario: Suppressing voltage spikes across MOSFET drains in 5 V buck converter synchronous rectifiers. IC Role / Device Role / Timing Role: Fast-recovery snubbing diode absorbing inductive kickback during switch-off transitions. Use Value: ≤100 ps trr prevents reverse conduction overlap with high-side FET, reducing switching loss by ~12%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR0230HT1G | 30 V VR, 200 mA IF, 410 mV VF @ 10 mA, 5 pF CT | Lower voltage rating limits use in 12 V clamping; higher IF suits higher-current snubbers. | Select when higher surge current tolerance is required and system max voltage ≤30 V. |
| 1N5711 | 70 V VR, 150 mA IF, 490 mV VF @ 10 mA, 4 pF CT, DO-35 through-hole | Through-hole mounting; higher VF increases conduction loss; larger package impedes high-density layouts. | Choose only for legacy through-hole designs or where 70 V standoff is mandatory and SMT is not feasible. |
Compared with NSR0230HT1G and 1N5711, BAS40B5000 offers optimal balance of 40 V rating, ultra-low VF, minimal CT, and SOT23 scalability-making it preferred for modern high-frequency, space-constrained signal conditioning.
Availability
BAS40B5000 is available at Aetrix Electronics and suitable for high-speed switching, voltage clamping, and RF detection applications requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for BAS40B5000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
The BAS40 series belongs to Infineon's general-purpose Schottky diode product line, engineered for cost-sensitive, high-volume applications demanding speed, low loss, and thermal robustness in consumer, industrial, and communications equipment.
FAQ
What is the maximum junction temperature for BAS40B5000?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent degradation of the Schottky barrier and increased leakage. Derating is required above 25 °C ambient per the thermal resistance RthJS ≤130 K/W and power dissipation curve.
Is BAS40B5000 qualified for automotive use?
No-BAS40B5000 is explicitly marked "Not for automotive applications" in the original Infineon documentation. While automotive qualification was noted as "ongoing" in 2006, no AEC-Q101 qualification report or automotive-grade variant (e.g., BAS40B5000H) has been released or documented by Infineon for this part number.
How does BAS40B5000 differ from BAS40-04 or BAS40-05 variants?
BAS40B5000 corresponds to the single-diode BAS40 configuration in SOT23. BAS40-04 and BAS40-05 are dual-diode variants (common cathode and common anode, respectively); they share identical electrical specs but differ in pinout, thermal resistance (RthJS ≤160 K/W and ≤185 K/W), and maximum allowable case temperature (110 °C and 104 °C).
Can BAS40B5000 replace BAT54 in existing designs?
Yes-BAS40B5000 is functionally compatible with BAT54 (SOT23, 30 V, 200 mA), offering higher reverse voltage (40 V vs. 30 V) and lower VF (350 mV vs. 370 mV typ. @ 10 mA). Pinout matches exactly; however, layout review is advised due to differences in thermal curves and surge ratings (IFSM = 200 mA vs. 600 mA for BAT54).
BAS40B5000 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 120mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 1 µA @ 30 V
- Capacitance @ Vr, F:
- 3pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23
- Operating Temperature - Junction:
- 150°C
BAS40B5000 FAQ
1.How can I place an order for BAS40B5000 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40B5000 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40B5000 reliable?
The price and inventory of BAS40B5000 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40B5000 is usually 5 days.
3.What payment methods are accepted for BAS40B5000?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40B5000 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40B5000?
BAS40B5000 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40B5000 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40B5000?
For technical support, including BAS40B5000 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40B5000 requirements.
6.How does Aetrix verify that BAS40B5000 is sourced from the original manufacturer or authorized distributors?
All BAS40B5000 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40B5000 meets industry standards.
7.What is the process for return or replacement of BAS40B5000?
All BAS40B5000 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40B5000, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40B5000 part is unused and in its original packaging.
Return procedure for BAS40B5000:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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