Infineon Technologies BAS40B5003

Overview

BAS40B5003 from Infineon Technologies is a silicon Schottky diode in SOT23 package configured as a single discrete diode, rated for 40 V reverse voltage, 120 mA forward current, and 250 mW power dissipation, with VF = 310–720 mV at IF = 10 mA and CT = 3 pF at VR = 0 V, f = 1 MHz, used for high-speed switching and voltage clamping in signal path protection circuits.

For engineers reviewing the BAS40B5003 datasheet, BAS40B5003 pinout, BAS40B5003 application, or BAS40B5003 equivalent, key selection criteria include low forward voltage matching (ΔVF ≤ 20 mV), ultra-fast recovery time (τrr ≤ 100 ps), thermal resistance RthJS ≤ 160 K/W, and suitability for RF mixing and level detection in compact consumer and industrial electronics.

Technical Context

This Schottky diode leverages low-barrier metal-semiconductor junction design to achieve sub-1 V forward conduction and minimal stored charge, enabling operation up to UHF frequencies. Its 3 pF capacitance at zero bias and 100 ps carrier lifetime support fast edge transitions in clipping and sampling circuits.

The device operates across –55 °C to +125 °C ambient, with junction temperature limited to 150 °C and thermal resistance from junction to soldering point ≤ 160 K/W for the BAS40-04/-06 variant-matching the B5003 reel packaging configuration.

Key Specifications

Pinout & Package

SOT23 plastic surface-mount package with gull-wing leads, 1.3 mm lead pitch, and standardized footprint per Infineon outline drawing (pin 1 marked). Thermal pad not present; soldering to PCB copper enhances heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with NSR0230HT1G and BAT54C,215, the BAS40B5003 delivers superior high-frequency response (3 pF CT, ≤100 ps τrr) and tighter VF matching (≤20 mV), making it optimal for RF detector, precision clamp, and matched-pair signal conditioning where timing fidelity and amplitude consistency are critical.

Availability

BAS40B5003 is available at Aetrix Electronics and suitable for RF front-end modules, ESD-hardened microcontroller interfaces, and precision analog signal conditioning requiring stable component supply and traceable lot control.

Supply support for BAS40B5003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete components.

The BAS40 series belongs to Infineon's high-speed Schottky diode product line, engineered for RF signal processing, fast switching, and low-loss clamping in space-constrained consumer and industrial electronics.

FAQ

What is the maximum junction temperature for BAS40B5003?

The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Infineon datasheet. Operation above this limit risks irreversible degradation of the Schottky barrier and increased leakage current. Derating curves show usable IF drops to ~100 mA at Ts = 110 °C, consistent with its RthJS ≤ 160 K/W rating.

Is BAS40B5003 qualified for automotive use?

No-BAS40B5003 is explicitly marked "Not for automotive applications" in the official documentation. While automotive qualification was noted as "ongoing" in 2006, no AEC-Q101 qualification or automotive-grade part number (e.g., BAS40B5003H) has been released or documented by Infineon for this specific reel variant.

How does BAS40B5003 differ from BAS40-04?

BAS40B5003 is the tape-and-reel packaging designation (10 × 3k reels) for the BAS40-04 variant, which shares identical electrical specs, SOT23 package, and single-diode configuration. The "B5003" suffix denotes packaging format only-not a functional or parametric revision-and is fully interchangeable with BAS40-04 in schematic and layout design.

Can BAS40B5003 be used in place of a 1N5711?

Yes-BAS40B5003 is a direct functional upgrade: both are silicon Schottky diodes rated for 40–70 V VR and ~100–150 mA IF. BAS40B5003 offers lower VF (310 mV vs. ~450 mV), lower CT (3 pF vs. ~5 pF), and faster τrr (≤100 ps vs. ~1 ns), making it preferable in high-frequency and low-voltage-drop applications where the 1N5711 is traditionally used.