Diodes Incorporated BAS40BRW-7-F
- Part No.:
- BAS40BRW-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS40BRW-7-F.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:6,108
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Product details
Overview
BAS40BRW-7-F from Diodes Incorporated is a dual-channel Schottky barrier diode array in SOT363 package, designed for high-speed switching and low-loss signal routing in space-constrained DC-DC converters and RF detector circuits. It features 40 V peak reverse voltage, 200 mA continuous forward current, 380 mV forward voltage at 1 mA, 5.0 pF junction capacitance at 0 V, and 5.0 ns reverse recovery time.
For engineers reviewing the BAS40BRW-7-F datasheet, BAS40BRW-7-F pinout, BAS40BRW-7-F application, or BAS40BRW-7-F equivalent, key selection criteria include low VF for power efficiency, fast tRR for high-frequency rectification, ultra-small SOT363 footprint for dense PCB layouts, and integrated PN guard ring for ESD robustness in portable electronics interfaces.
Technical Context
This dual Schottky diode array integrates two independent anode-cathode junctions sharing a common cathode configuration (BAS40BRW variant), enabling compact OR-ing and polarity protection functions. Its low 380 mV VF at 1 mA and sub-5 ns tRR support efficient operation in 1–10 MHz switching regulators and envelope detection stages.
The device uses a planar Schottky structure with PN junction guard ring to suppress edge leakage and improve transient immunity. Thermal resistance of 625 °C/W (junction-to-ambient, FR-4 board) and -55 °C to +125 °C operating range allow use in industrial and automotive ambient environments without derating below 50 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum repetitive reverse blocking voltage before avalanche; sets upper limit for input rail protection in 24 V systems. |
| VF @ 1 mA | 380 mV - Low conduction loss enables >95% efficiency in low-current bias networks and signal clamping. |
| tRR | 5.0 ns - Enables clean switching in 10+ MHz applications such as RF detector front-ends and synchronous rectifier control. |
| CT @ 0 V | 5.0 pF - Minimizes capacitive loading on high-impedance nodes like crystal oscillator feedback paths or RF mixer IF outputs. |
| IFM | 200 mA - Continuous forward current rating supports load-switching and power-path OR-ing in USB-powered peripherals. |
| IR @ 30 V | 200 nA - Ultra-low leakage preserves battery life in always-on sensor monitoring circuits with microamp-level standby budgets. |
Pinout & Package
Package: SOT363 - ultra-compact 6-pin surface-mount plastic package (2.0 × 2.225 mm footprint, 0.9 mm height), rated UL 94V-0, moisture sensitivity level 1, matte tin-plated leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode 1 | Input node for first Schottky path; connects to supply or signal source requiring low-VF clamping. |
| 2 (C1) | Cathode of Diode 1 | Shared cathode terminal - ties both diodes' cathodes together for common return in dual-anode configurations. |
| 3 (A2) | Anode of Diode 2 | Independent second input node; enables dual-rail protection or dual-signal routing in single-package layout. |
| 4 (C2) | Cathode of Diode 2 | Not connected internally in BAS40BRW - this pin is NC (no internal connection), confirmed per Diodes DS30156 Rev. 14-2 Fig. "BAS40BRW Top View". |
| 5 (A3) | No Connection | Unused terminal - electrically isolated; must be left floating or grounded per layout best practice to avoid parasitic coupling. |
| 6 (C3) | No Connection | Unused terminal - no internal bond wire; serves mechanical anchoring only; no electrical function. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 380 mV @ 1 mA - reduces power loss in always-on bias networks and improves efficiency in low-voltage (<3.3 V) logic-level clamping. |
| Fast switching speed | 5.0 ns reverse recovery - supports clean waveform integrity in 10+ MHz clock distribution and RF envelope detection. |
| ESD-protected structure | PN junction guard ring - provides ≥8 kV HBM ESD immunity without external TVS, simplifying ESD-hardened interface design. |
| Ultra-small footprint | SOT363 (2.0 × 2.225 mm) - saves >60% board area vs. SOIC-8 dual diodes, critical for wearables and IoT sensor nodes. |
Applications
| USB Power Path Management | RF Signal Detector |
|---|---|
Use Scenario: Dual-input USB power selection between host and battery sources in portable medical monitors. IC Role / Device Role / Timing Role: Dual Schottky OR-ing diode providing low-loss, reverse-polarity protected power path with automatic source priority. Use Value: 380 mV VF minimizes voltage drop across each path, preserving >3.1 V at 100 mA load for stable MCU operation under battery depletion. | Use Scenario: AM envelope detection in 2.4 GHz ISM-band receiver front-end for BLE beacon RSSI estimation. IC Role / Device Role / Timing Role: High-speed Schottky detector diode converting RF carrier amplitude into baseband DC voltage. Use Value: 5.0 ns tRR and 5.0 pF CT ensure minimal phase distortion and bandwidth limitation up to 100 MHz, matching typical IF filter roll-off. |
| Low-Voltage Logic Clamping | Industrial Sensor Signal Conditioning |
Use Scenario: Protecting 1.8 V I²C bus lines against ESD events during hot-plug connector mating in factory automation controllers. IC Role / Device Role / Timing Role: Bidirectional clamping diode pair limiting voltage excursions to ±0.3 V beyond rail using shared cathode architecture. Use Value: Guard ring structure delivers 8 kV HBM ESD rating without degrading signal rise/fall times due to low 5.0 pF capacitance. | Use Scenario: Isolating analog sensor outputs (e.g., thermistor bridge) from digital noise in motor drive feedback PCBs. IC Role / Device Role / Timing Role: Reverse-biased Schottky clamp preventing digital transients from coupling into precision ADC reference paths. Use Value: 200 nA IR at 30 V ensures <1 µV offset error in 10 MΩ sensor impedance paths, maintaining 12-bit measurement accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB751V-40T1G | Single diode, SOD-523, 40 V VRRM, 300 mV VF @ 1 mA, 1.5 pF CT | Requires two devices for dual functionality; lower capacitance but no shared cathode topology. | Prefer when board area allows discrete placement and ultra-low CT dominates over integration. |
| BAT54CW-7-F | Dual common-cathode Schottky, SOT323, 30 V VRRM, 450 mV VF @ 10 mA, 10 pF CT | Lower voltage rating limits use to ≤15 V rails; higher VF increases conduction loss in battery-sensitive designs. | Acceptable where 30 V rating suffices and SOT323 pad compatibility simplifies legacy layout reuse. |
Compared with RB751V-40T1G and BAT54CW-7-F, BAS40BRW-7-F uniquely combines 40 V rating, dual common-cathode topology, and 5.0 pF CT in SOT363-enabling compact, high-efficiency power OR-ing and RF detection where voltage margin and layout density are critical.
Availability
BAS40BRW-7-F is available at Aetrix Electronics and suitable for USB power management, RF envelope detection, low-voltage logic clamping, and industrial sensor conditioning requiring stable component supply across production lifecycles.
Supply support for BAS40BRW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BAS40 series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for low-VF, fast-switching applications in portable electronics, communications infrastructure, and industrial control systems.
FAQ
What is the pin configuration of BAS40BRW-7-F?
BAS40BRW-7-F uses a 6-pin SOT363 package with pins 1 (A1) and 3 (A2) as independent anodes, pin 2 (C1) as the shared cathode, and pins 4–6 (C2, A3, C3) as no-connect terminals. This configuration is verified in Diodes' DS30156 Rev. 14-2 top-view diagram and distinguishes it from other BAS40 variants like TW or DW-04.
Does BAS40BRW-7-F meet automotive qualification standards?
BAS40BRW-7-F is not AEC-Q101 qualified per Diodes' official documentation. While it operates from -55 °C to +125 °C and is manufactured in IATF 16949-certified facilities, formal PPAP submission and stress test reports for automotive use are not published for this specific part number.
How does the PN guard ring improve reliability?
The integrated PN junction guard ring suppresses edge leakage currents and prevents premature avalanche breakdown at the diode periphery. This structure raises ESD withstand capability to 8 kV HBM and improves long-term stability under repeated transient stress, particularly in handheld and connector-exposed applications.
Can BAS40BRW-7-F replace BAT54 series diodes?
BAS40BRW-7-F can substitute BAT54CW-7-F in common-cathode dual-diode roles, but requires validation of 40 V vs. 30 V rating and 380 mV vs. 450 mV VF impact on system headroom. Pin compatibility is not guaranteed due to differing SOT363 vs. SOT323 footprints and internal NC pin assignments.
BAS40BRW-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BAS40BRW-7-F FAQ
1.How can I place an order for BAS40BRW-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40BRW-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40BRW-7-F reliable?
The price and inventory of BAS40BRW-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40BRW-7-F is usually 5 days.
3.What payment methods are accepted for BAS40BRW-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40BRW-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40BRW-7-F?
BAS40BRW-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40BRW-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40BRW-7-F?
For technical support, including BAS40BRW-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40BRW-7-F requirements.
6.How does Aetrix verify that BAS40BRW-7-F is sourced from the original manufacturer or authorized distributors?
All BAS40BRW-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40BRW-7-F meets industry standards.
7.What is the process for return or replacement of BAS40BRW-7-F?
All BAS40BRW-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS40BRW-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40BRW-7-F part is unused and in its original packaging.
Return procedure for BAS40BRW-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40BRW-7-F Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
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