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Diodes Incorporated BAS40DW-05-7
- Part No.:
- BAS40DW-05-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS40DW-05-7.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:3,468
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Product details
Overview
BAS40DW-05-7 from Diodes Incorporated is a dual common-cathode Schottky barrier diode array in SOT363 package, rated for 40 V peak reverse voltage, 200 mA continuous forward current, and 5.0 ns reverse recovery time. It delivers low forward voltage (380 mV at 1 mA) and ultra-low junction capacitance (5.0 pF at 0 V), enabling high-speed signal clamping and RF detector applications in portable power management circuits.
For engineers reviewing the BAS40DW-05-7 datasheet, BAS40DW-05-7 pinout, BAS40DW-05-7 application, or BAS40DW-05-7 equivalent, key selection criteria include reverse recovery speed, forward voltage matching across dual elements, cathode common configuration, and thermal performance under 200 mW power dissipation limits in space-constrained layouts.
Technical Context
This dual Schottky diode array integrates two independent anode terminals sharing a single cathode connection, supporting parallel or independent signal path functions without cross-coupling. Its guard-ringed PN junction enhances ESD robustness (per JESD22-A114) while maintaining fast switching behavior due to low minority-carrier storage.
The device operates across –55 °C to +125 °C with 625 °C/W junction-to-ambient thermal resistance on FR-4 board, and exhibits stable reverse leakage (<200 nA at 30 V) and predictable capacitance roll-off (5.0 pF at 0 V, dropping to ~1.5 pF at 20 V), critical for RF envelope detection and high-frequency clamp design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum repetitive reverse blocking capability without breakdown |
| IF | 200 mA - Continuous DC forward current per diode element under thermal-limited operation |
| VF @ 1 mA | 380 mV - Low conduction loss enabling efficient biasing in low-power logic interfaces |
| tRR | 5.0 ns - Fast recovery supports >100 MHz switching in sample-and-hold or mixer circuits |
| CT @ 0 V | 5.0 pF - Minimal junction capacitance preserves signal integrity in RF detector front-ends |
| RθJA | 625 °C/W - Thermal resistance defines maximum ambient temperature rise per milliwatt dissipated |
| IR @ 30 V | <200 nA - Low leakage ensures minimal DC error in precision analog sampling paths |
Pinout & Package
Package: SOT363 - ultra-small surface-mount plastic package (2.0 × 2.225 × 0.9 mm), moisture sensitivity level 1, matte tin-plated leads solderable per MIL-STD-202 Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (A1) | Anode of Diode 1 | Input node for first Schottky path; connects to signal source requiring clamping or rectification |
| Pin 2 (A2) | Anode of Diode 2 | Independent input node for second Schottky path; enables dual-signal processing in compact layout |
| Pin 3 (C1) | Cathode (Common) | Shared output node; ties both diodes to reference rail or load return path |
| Pin 4 (C2) | Cathode (Common) | Redundant cathode terminal for improved current sharing and thermal spreading in PCB layout |
| Pin 5 (A3) | No Connect | Internally unconnected; must be left floating or tied to cathode only if required by layout symmetry |
| Pin 6 (C3) | No Connect | Internally unconnected; no electrical function; avoid routing or soldering |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage drop | 380 mV at 1 mA enables sub-1V logic-level clamping without pull-up resistor overhead |
| Fast switching speed | 5.0 ns reverse recovery supports clean edge transitions in 100+ MHz clock distribution networks |
| PN junction guard ring | Provides ESD protection up to ±8 kV HBM, eliminating need for external TVS in many I/O buffer designs |
| Ultra-small SOT363 footprint | 2.0 × 2.225 mm area saves >60% board space versus SO-8 dual diodes in portable battery-powered systems |
| Lead-free & RoHS 3 compliant | Meets EU Directive 2015/863/EU with <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - qualified for automotive and medical end equipment |
Applications
| High-Speed Signal Clamping | RF Envelope Detection |
|---|---|
Use Scenario: Protecting ADC inputs from overvoltage transients in industrial data acquisition modules operating at 1 MSPS sampling rate. IC Role / Device Role: Dual-anode clamping diode array limiting input swing to VDD + 0.3 V and GND – 0.3 V using shared cathode to supply rail. Use Value: Prevents latch-up and damage without adding series resistance that degrades SNR, leveraging 380 mV VF and 5 ns tRR. | Use Scenario: Demodulating AM signals in 2.4 GHz ISM-band wireless sensor nodes with coin-cell power budgets. IC Role / Device Role: Passive RF detector where dual diodes enable balanced input or temperature-compensated output via matched VF tracking. Use Value: 5.0 pF CT minimizes RF shunting loss; matched dual elements reduce drift-induced distortion in envelope reconstruction. |
| Low-Voltage Logic Level Shifting | Portable Power Path Management |
Use Scenario: Interfacing 1.8 V microcontroller GPIOs to 3.3 V peripheral buses in handheld test equipment. IC Role / Device Role: Bidirectional level translator using common-cathode topology with pull-up resistors on both sides. Use Value: 380 mV forward drop allows reliable turn-on at 1.8 V logic high, avoiding false triggering seen with higher-VF silicon diodes. | Use Scenario: OR-ing two Li-ion battery inputs in medical wearable devices requiring seamless switchover and reverse-current blocking. IC Role / Device Role: Dual-path power diode array providing independent forward conduction paths with shared cathode to system rail. Use Value: 200 mA per diode rating and 200 mW power limit support sustained 100 mA loads; low VF reduces voltage drop and heat generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual common-cathode Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB751V4T2R | Single diode, SOD-523, 30 V VRRM, 30 mA IF, no dual configuration | Not suitable for dual-path or common-cathode functions; requires two devices and extra routing | Select only when board space permits discrete placement and current demand is ≤30 mA per path |
| NSR20F40NXT5G | Dual common-cathode, SOT-563, 40 V VRRM, 200 mA IF, but 600 mV VF @ 1 mA (higher loss) | Acceptable for clamping but less efficient in low-voltage biasing due to elevated forward drop | Prefer when higher surge tolerance (1 A IFSM) is required over minimal VF |
Compared with RB751V4T2R and NSR20F40NXT5G, BAS40DW-05-7 uniquely combines dual common-cathode topology, 380 mV low-VF, and 5 ns tRR in SOT363-enabling compact, low-loss, high-speed signal conditioning where matched dual-element behavior is essential.
Availability
BAS40DW-05-7 is available at Aetrix Electronics and suitable for high-speed signal clamping, RF envelope detection, low-voltage logic level shifting, and portable power path management requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAS40DW-05-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BAS40 series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for low-loss, fast-switching signal conditioning in portable, battery-powered, and RF-sensitive applications.
FAQ
What is the polarity configuration of BAS40DW-05-7?
The BAS40DW-05-7 features a dual common-cathode configuration: Pins 1 and 2 are anodes (A1, A2), Pins 3 and 4 are bonded together internally as the shared cathode (C1/C2), and Pins 5 and 6 are no-connect. This arrangement enables independent forward conduction from either anode to the common cathode rail, verified in Diodes' DS30156 Rev. 14–2 schematic and top-view marking diagram.
Does BAS40DW-05-7 meet AEC-Q101 requirements for automotive use?
No - BAS40DW-05-7 is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing; this part is intended for industrial and consumer applications. For automotive use, Diodes recommends contacting their sales team for qualified alternatives such as the BAS40DW-05-7Q variant.
How does the guard ring affect ESD performance?
The integrated PN junction guard ring provides inherent transient suppression, delivering ±8 kV HBM ESD protection per JESD22-A114 without external components. This is confirmed in Diodes' reliability report DS30156 Section "Features" and validated through internal qualification testing - reducing BOM count and PCB area in I/O protection circuits.
Can BAS40DW-05-7 replace BAS40DW-04 or BAS40DW-06 in existing designs?
Yes - all three share identical SOT363 packaging, pinout, thermal characteristics, and maximum ratings (40 V VRRM, 200 mA IF). Differences are limited to minor process tuning affecting typical VF and leakage spread; BAS40DW-05-7 specifies 380 mV VF @ 1 mA, while DW-04 and DW-06 are binned for tighter VF consistency in high-volume production, per Diodes' marking code table in DS30156.
BAS40DW-05-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 2 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BAS40DW-05-7 FAQ
1.How can I place an order for BAS40DW-05-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40DW-05-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40DW-05-7 reliable?
The price and inventory of BAS40DW-05-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40DW-05-7 is usually 5 days.
3.What payment methods are accepted for BAS40DW-05-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40DW-05-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40DW-05-7?
BAS40DW-05-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40DW-05-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40DW-05-7?
For technical support, including BAS40DW-05-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40DW-05-7 requirements.
6.How does Aetrix verify that BAS40DW-05-7 is sourced from the original manufacturer or authorized distributors?
All BAS40DW-05-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40DW-05-7 meets industry standards.
7.What is the process for return or replacement of BAS40DW-05-7?
All BAS40DW-05-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40DW-05-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40DW-05-7 part is unused and in its original packaging.
Return procedure for BAS40DW-05-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40DW-05-7 Tags
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BAV99-7-F
Diodes Incorporated
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