Diodes Incorporated BAS40DW-06-7
- Part No.:
- BAS40DW-06-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS40DW-06-7.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT363
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BAS40DW-06-7 from Diodes Incorporated is a dual-channel Schottky barrier diode array in SOT363 package, rated for 40 V peak reverse voltage, 200 mA continuous forward current, and 5.0 ns reverse recovery time. It delivers low forward voltage (380 mV at 1 mA) and ultra-low junction capacitance (5.0 pF at 0 V), enabling high-speed signal clamping and RF detector applications in portable power management circuits.
For engineers reviewing the BAS40DW-06-7 datasheet, BAS40DW-06-7 pinout, BAS40DW-06-7 application, or BAS40DW-06-7 equivalent, key selection criteria include its dual common-cathode configuration, 28 V RMS reverse rating, 600 mA non-repetitive surge capability, thermal resistance of 625 °C/W, and AEC-Q101 readiness for automotive signal conditioning designs.
Technical Context
This dual Schottky array integrates two independent anode terminals (A1, A2) sharing a common cathode (C1), forming a matched pair optimized for low-loss, high-frequency switching. Its guard-ringed PN junction enhances ESD robustness (per JESD22-A114) while maintaining fast transient response.
The device operates across –55 °C to +125 °C with 200 mW power dissipation on FR-4 board, and exhibits stable reverse leakage (<200 nA at 30 V) and minimal voltage-dependent capacitance (5.0 pF at 0 V, dropping to ~1.5 pF at 20 V), critical for RF mixer and sampling circuit integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum repetitive reverse blocking capability without breakdown |
| IF | 200 mA - Continuous DC forward current per diode channel under thermal limits |
| tRR | 5.0 ns - Time to recover from forward conduction to full reverse blocking state |
| VF @ 1 mA | 380 mV - Low forward drop enabling efficient biasing in low-voltage detector stages |
| CT @ 0 V | 5.0 pF - Junction capacitance limiting signal distortion in >100 MHz RF paths |
| RθJA | 625 °C/W - Thermal resistance defining junction-to-ambient temperature rise per watt dissipated |
| IR @ 30 V | <200 nA - Ultra-low reverse leakage preserving signal fidelity in high-impedance nodes |
Pinout & Package
Package: SOT363 - ultra-small surface-mount plastic package (2.0 × 2.225 mm footprint), moisture sensitivity level 1, matte tin-plated leads, 0.006 g weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | Anode 1 | Input terminal for first Schottky diode channel; connects to signal source in clamp or rectifier path |
| A2 | Anode 2 | Input terminal for second independent Schottky diode channel |
| C1 | Common Cathode | Shared output node for both diodes; ties to reference rail (e.g., ground or bias voltage) |
| C2 | Unused / NC | No internal connection; electrically isolated, must be left floating or grounded per layout guidelines |
| A3 | Unused / NC | No internal connection; electrically isolated, must be left floating or grounded per layout guidelines |
| C3 | Unused / NC | No internal connection; electrically isolated, must be left floating or grounded per layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 380 mV @ 1 mA enables sub-1 V signal clamping without forward conduction loss |
| Fast switching speed | 5.0 ns tRR supports >100 MHz clock edge detection and RF envelope demodulation |
| PN junction guard ring | ESD protection per JESD22-A114 (±8 kV HBM) without external TVS components |
| Ultra-small SOT363 footprint | 2.0 × 2.225 mm outline saves PCB area in space-constrained IoT sensor modules |
| Lead-free & green compliance | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial RoHS 3 requirements |
Applications
| RF Signal Detector | High-Speed Logic Clamp |
|---|---|
Use Scenario: Demodulating AM signals in 2.4 GHz ISM-band receiver front-ends. IC Role / Device Role / Timing Role: Dual Schottky diode acting as synchronous envelope detector with matched channel characteristics. Use Value: 5.0 pF capacitance and 5.0 ns recovery minimize phase distortion and preserve modulation fidelity up to 150 MHz. | Use Scenario: Protecting FPGA I/O pins from overshoot during 100+ MHz data bus transitions. IC Role / Device Role / Timing Role: Common-cathode clamp directing transient energy to ground rail before logic threshold violation. Use Value: 380 mV forward drop ensures clamping activates below 0.5 V, preventing CMOS gate damage without adding propagation delay. |
| Portable Power Rail OR-ing | Automotive Sensor Signal Conditioning |
Use Scenario: Selecting between USB and battery supply in wearable health monitors. IC Role / Device Role / Timing Role: Dual-anode diode array implementing low-loss power path selection with shared return. Use Value: 200 mA per channel and 40 V VRRM support dual 3.3 V/5 V rail management with <150 mW conduction loss. | Use Scenario: Level-shifting and noise suppression for CAN FD transceiver input pins in engine control units. IC Role / Device Role / Timing Role: ESD-hardened signal interface element placed directly at connector entry point. Use Value: Guard-ringed junction withstands ±8 kV HBM surges while maintaining 200 nA leakage at 12 V system rail. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR20F40NXT5G | Single-channel, 40 V, 200 mA, SOD-523 package; no common-cathode topology | Requires two devices for dual-path function; lacks integrated matching and shared cathode routing | Select when discrete placement flexibility outweighs board-area savings and channel matching needs |
| BAT54CDW-7-F | Same SOT363 package and dual common-cathode structure; 30 V VRRM, 300 mV VF @ 1 mA | Lower reverse voltage rating limits use in 36 V automotive subsystems; lower VF improves efficiency at light loads | Prefer for 24 V systems where tighter forward voltage tolerance is prioritized over 40 V margin |
Compared with NSR20F40NXT5G and BAT54CDW-7-F, BAS40DW-06-7 uniquely balances 40 V blocking, 5 ns speed, and dual matched channels in SOT363-making it optimal for compact RF detectors and automotive signal clamps requiring both voltage headroom and timing precision.
Availability
BAS40DW-06-7 is available at Aetrix Electronics and suitable for RF detector modules, high-speed logic protection circuits, and automotive sensor interface boards requiring stable component supply and long-term production continuity.
Supply support for BAS40DW-06-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving industrial, computing, consumer, and automotive markets with high-reliability components.
The BAS40 series targets high-frequency signal integrity applications-designed specifically for RF detection, fast-switching clamping, and ESD-hardened interface protection where low capacitance and rapid recovery are essential.
FAQ
What is the pin configuration of BAS40DW-06-7?
The BAS40DW-06-7 uses a six-pin SOT363 package with active terminals A1, A2, and C1 configured as dual anodes and one common cathode. Pins C2, A3, and C3 are unconnected and must remain floating or grounded per layout guidelines to avoid parasitic coupling.
Does BAS40DW-06-7 meet AEC-Q101 requirements?
Yes-BAS40DW-06-7 is qualified to AEC-Q101 for stress testing including HTGB, TCT, and ESD (HBM ±8 kV). It is manufactured in IATF 16949-certified facilities and supports PPAP documentation for automotive Tier-1 suppliers.
How does the guard ring improve reliability?
The integrated PN junction guard ring suppresses edge leakage currents and prevents premature avalanche breakdown during ESD events. This structure enables the device to pass JESD22-A114 (±8 kV HBM) without external protection components in most signal-line applications.
Can BAS40DW-06-7 replace BAT54CDW-7-F in existing designs?
Yes, with verification of reverse voltage margin: BAS40DW-06-7 offers 40 V VRRM versus 30 V for BAT54CDW-7-F, making it suitable for higher-voltage rails. Layout is identical (SOT363), but forward voltage is slightly higher (380 mV vs. 300 mV at 1 mA), affecting light-load efficiency.
BAS40DW-06-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BAS40DW-06-7 FAQ
1.How can I place an order for BAS40DW-06-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40DW-06-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40DW-06-7 reliable?
The price and inventory of BAS40DW-06-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40DW-06-7 is usually 5 days.
3.What payment methods are accepted for BAS40DW-06-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40DW-06-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40DW-06-7?
BAS40DW-06-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40DW-06-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40DW-06-7?
For technical support, including BAS40DW-06-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40DW-06-7 requirements.
6.How does Aetrix verify that BAS40DW-06-7 is sourced from the original manufacturer or authorized distributors?
All BAS40DW-06-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40DW-06-7 meets industry standards.
7.What is the process for return or replacement of BAS40DW-06-7?
All BAS40DW-06-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40DW-06-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40DW-06-7 part is unused and in its original packaging.
Return procedure for BAS40DW-06-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40DW-06-7 Tags

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BAV99-7-F
Diodes Incorporated

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