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Nexperia USA Inc. BAS40H,115

Part No.:
BAS40H,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
SOD-123F
Datasheet:
AetrixBAS40H,115.pdf
Description:
DIODE SCHOTTKY 40V 120MA SOD123F
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:18,525

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Product details

Overview

BAS40H from Nexperia is a general-purpose Schottky diode in SOD123F surface-mount package, rated for 40 V reverse voltage, 120 mA forward current, and 380 mV forward voltage at 1 mA. It delivers ultra-high-speed switching with low leakage (≤10 µA at 40 V), low capacitance (5 pF), and thermal resistance of 330 K/W - deployed in clamping circuits and high-frequency signal routing on compact PCBs.

For engineers reviewing the BAS40H datasheet, BAS40H pinout, BAS40H application, or BAS40H equivalent, this page provides verified electrical parameters, validated SOD123F terminal mapping, real-world clamping and switching use cases, and direct alternative comparisons - all grounded in Nexperia's October 2024 product data sheet.

Technical Context

The BAS40H operates as a unidirectional, low-barrier Schottky rectifier optimized for fast transient response and minimal forward conduction loss. Its metal–semiconductor junction enables sub-1 ns recovery time and stable performance across −65 °C to +150 °C ambient range.

It exhibits low differential resistance (<1 Ω at 10 mA), tightly controlled reverse leakage (1 µA at 30 V, 10 µA at 40 V), and voltage-dependent capacitance (5 pF at 0 V, dropping to ~1 pF at 30 V), making it suitable for RF detector biasing and ESD-sensitive signal path protection.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 40 V - maximum blocking capability without breakdown under DC or pulsed conditions at 25 °C junction temperature.
Forward Current (IF) 120 mA continuous - supports sustained conduction in power rail clamping and logic-level translation paths.
Forward Voltage (VF) 380 mV at 1 mA - ensures minimal voltage drop and power loss in low-current bias and sensing applications.
Reverse Leakage (IR) 10 µA at 40 V - maintains signal integrity in high-impedance nodes by limiting parasitic current paths.
Capacitance (Cd) 5 pF at 0 V, 1 MHz - enables use in >100 MHz signal routing without significant capacitive loading.
Thermal Resistance (Rth(j-a)) 330 K/W - defines junction-to-ambient heat dissipation on standard FR4 PCB with single-sided copper.

Pinout & Package

Package: SOD123F - surface-mount plastic package measuring 2.6 mm × 1.6 mm × 1.1 mm, with flat leads and cathode-marked bar on top surface.

Pin/Terminal Circuit Role Design Meaning
1 Cathode (K) Negative terminal; marked by bar on device top; connects to lower-potential node in forward-biased operation.
2 Anode (A) Positive terminal; unmarked lead; accepts input voltage during clamping or rectification.

Key Features

Feature Design Value
High switching speed Sub-nanosecond reverse recovery enables use in >500 MHz pulse shaping and RF envelope detection.
Low leakage current ≤1 µA at 30 V ensures negligible DC error in precision analog sampling and reference bias networks.
Low forward voltage 380 mV at 1 mA reduces power loss in battery-powered sensor front-ends and low-voltage logic interfaces.
Low capacitance 5 pF at 0 V minimizes signal distortion in high-frequency clock distribution and antenna coupling paths.

Applications

Logic-Level Clamping RF Detector Biasing

Use Scenario: Protecting CMOS input pins from overvoltage transients in microcontroller I/O banks.

IC Role / Device Role / Timing Role: Fast-acting clamp diode shunting excess voltage to VCC or GND before damage threshold is reached.

Use Value: 380 mV VF and 10 µA IR preserve logic threshold margins while enabling <10 ns response to ESD events.

Use Scenario: Providing DC bias to Schottky diode detectors in 2.4 GHz Wi-Fi front-end modules.

IC Role / Device Role / Timing Role: Low-capacitance anode connection supplies stable DC offset without attenuating RF carrier.

Use Value: 5 pF Cd and sub-1 ns recovery prevent detuning and insertion loss in matching networks.

High-Speed Signal Routing Low-Power Sensor Biasing

Use Scenario: Steering TTL/CMOS signals between multiple sources using diode-OR configuration.

IC Role / Device Role / Timing Role: Unidirectional signal gate with minimal propagation delay and voltage drop.

Use Value: 120 mA IF rating supports parallel drive of multiple loads; 330 K/W Rth(j-a) sustains operation at 75 °C ambient.

Use Scenario: Supplying regulated bias current to MEMS microphone preamplifiers in wearables.

IC Role / Device Role / Timing Role: Low-loss current source element in precision current mirror or voltage reference divider.

Use Value: 380 mV VF ensures ≥95% efficiency in 1.8 V supply rails; 1 µA IR avoids offset drift in picoampere-sensitivity circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N5711 Higher VF (430 mV @ 1 mA), larger DO-35 through-hole package, 70 V VR rating. Suitable for prototyping and through-hole designs but incompatible with automated SMT assembly. Select when board space allows DO-35 and higher reverse voltage margin is required.
BAS70-04 Lower VR (70 V), same SOD123F package, 800 mV VF @ 1 mA, 10x higher IR (100 µA @ 40 V). Acceptable for general-purpose clamping where leakage tolerance is relaxed. Choose only if 70 V blocking is mandatory and 10 µA leakage is not critical to system accuracy.

Compared with 1N5711 and BAS70-04, the BAS40H uniquely balances low VF (380 mV), tight IR (10 µA), SMD compatibility, and 40 V VR - making it optimal for space-constrained, low-power, high-frequency clamping where precision and manufacturability are jointly prioritized.

Availability

BAS40H is available at Aetrix Electronics and suitable for ultra-high-speed switching, voltage clamping, RF detector biasing, and low-power sensor biasing requiring stable component supply and full traceability.

Supply support for BAS40H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for mass-market electronics.

The BAS40H belongs to Nexperia's general-purpose Schottky diode series, engineered for cost-effective, high-volume applications demanding speed, low loss, and robust thermal behavior in consumer, computing, and communications equipment.

FAQ

Is the BAS40H automotive-qualified?

No. The October 2024 datasheet explicitly states that BAS40H is non-automotive qualified. It has not undergone AEC-Q101 stress testing or automotive-grade qualification. For automotive use, Nexperia offers separate -Q variants such as BAS40H-Q, which must be specified separately and verified against vehicle-grade requirements.

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (Tj) is 150 °C, per IEC 60134 limiting values. Continuous operation at this limit requires derating based on ambient temperature and PCB thermal design - for example, at 70 °C ambient, maximum power dissipation is limited to ~240 mW using the 330 K/W Rth(j-a) value.

Does the marking "AJ" correspond to BAS40H?

Yes. Table 4 of the datasheet confirms that the marking code "AJ" is assigned exclusively to the BAS40H type number. This laser-marked identifier appears adjacent to the cathode bar on the SOD123F package body and is used for traceability and visual identification during assembly and inspection.

Can BAS40H replace BAT54 in existing designs?

Not directly. While both are SOD123F Schottky diodes, BAT54 has 30 V VR and 240 mV VF @ 10 mA, whereas BAS40H offers 40 V VR but higher VF (500 mV @ 10 mA). Substitution requires verifying that the 10 V higher blocking voltage justifies the 260 mV higher forward drop in the target circuit's power budget and timing margins.

BAS40H,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SOD-123F
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io):
120mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 40 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
10 µA @ 40 V
Capacitance @ Vr, F:
5pF @ 0V, 1MHz
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123F
Operating Temperature - Junction:
150°C (Max)

BAS40H,115 FAQ

1.How can I place an order for BAS40H,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS40H,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS40H,115 reliable?

The price and inventory of BAS40H,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40H,115 is usually 5 days.

3.What payment methods are accepted for BAS40H,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40H,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS40H,115?

BAS40H,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS40H,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS40H,115?

For technical support, including BAS40H,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40H,115 requirements.

6.How does Aetrix verify that BAS40H,115 is sourced from the original manufacturer or authorized distributors?

All BAS40H,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40H,115 meets industry standards.

7.What is the process for return or replacement of BAS40H,115?

All BAS40H,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40H,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS40H,115 part is unused and in its original packaging.

Return procedure for BAS40H,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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