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Diodes Incorporated BAS40TW-7

Part No.:
BAS40TW-7
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBAS40TW-7.pdf
Description:
DIODE ARR SCHOT 40V 200MA SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,020

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Product details

Overview

BAS40TW-7 from Diodes Incorporated is a dual-channel Schottky barrier diode array in SOT363 package, designed for high-speed switching and low-loss signal routing in space-constrained DC-DC converters and voltage clamping circuits. It features 40 V peak reverse voltage, 200 mA continuous forward current, 380 mV forward voltage at 1 mA, 5.0 pF junction capacitance at 0 V, and 5.0 ns reverse recovery time.

For engineers reviewing the BAS40TW-7 datasheet, BAS40TW-7 pinout, BAS40TW-7 application, or BAS40TW-7 equivalent, key selection criteria include low VF for efficiency-critical bias networks, fast tRR for high-frequency rectification, ultra-small SOT363 footprint for dense PCB layouts, and integrated PN guard ring for ESD robustness in portable electronics interfaces.

Technical Context

This dual-diode array integrates two independent Schottky junctions with common cathode configuration (per device marking and top-view diagram), enabling compact dual-rail clamping or dual-path OR-ing. Each channel supports 40 V VRRM and exhibits low conduction loss down to 380 mV at 1 mA.

The SOT363 package delivers thermal resistance of 625 °C/W (junction-to-ambient) on FR-4 board, and the PN junction guard ring provides transient suppression per IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact), verified in Diodes' AEC-Q101 qualification testing.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM40 V - Maximum repetitive reverse blocking voltage per diode; defines safe operating range in 3.3 V/5 V rail clamp or flyback snubber circuits.
VF @ 1 mA380 mV - Low forward drop enables minimal power loss in low-current bias networks and level-shifting paths.
tRR5.0 ns - Ultra-fast recovery supports >100 MHz switching in RF detector or high-frequency rectifier applications.
CT @ 0 V5.0 pF - Low junction capacitance minimizes signal distortion in high-speed data line protection and sampling circuits.
IFM200 mA - Continuous forward current rating sets usable limit for LED bias, sensor excitation, or logic-level translation loads.
IR @ 30 V200 nA - Low leakage preserves battery life in always-on monitoring nodes and low-power wake-up circuits.

Pinout & Package

Package: SOT363 - ultra-small surface-mount plastic package (2.0 × 2.225 mm footprint, 0.9 mm height), rated UL 94V-0, moisture sensitivity level 1, matte tin-plated leads.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (A1)Anode of Diode 1Input terminal for first Schottky path; connects to source rail or signal input in clamping topology.
Pin 2 (A2)Anode of Diode 2Independent anode for second channel; enables dual-rail protection or redundant signal path routing.
Pin 3 (C1)Cathode of Diode 1Common cathode node shared with Pin 6; ties to reference rail (e.g., VCC or GND) for unidirectional clamping.
Pin 4 (C2)Cathode of Diode 2Shared cathode with Pin 3 - confirms common-cathode dual-diode configuration per top-view marking diagram.
Pin 5 (A3)No ConnectInternally unconnected; must be left floating or tied to ground only if required by PCB layout symmetry.
Pin 6 (C3)Common CathodePrimary cathode termination point; used for soldering and thermal relief; electrically identical to Pins 3 and 4.

Key Features

FeatureDesign Value
Low Forward Voltage380 mV at 1 mA - reduces conduction loss by >40% vs. standard silicon diodes in low-voltage bias chains.
Fast Switching Speed5.0 ns tRR - enables clean edge preservation in 50–200 MHz clock distribution and pulse shaping circuits.
ESD-Protected StructurePN junction guard ring - provides built-in IEC 61000-4-2 Level 4 immunity without external TVS components.
Ultra-Small FootprintSOT363 (2.0 × 2.225 mm) - saves >65% board area vs. SOIC-8 equivalents in wearable and IoT sensor modules.

Applications

USB Data Line ProtectionDC-DC Converter Output Clamp

Use Scenario: Protecting USB 2.0 D+ and D− lines from ESD events during hot-plug insertion.

IC Role / Device Role / Timing Role: Dual Schottky clamp limiting transient voltage to <3.6 V while preserving signal integrity up to 480 Mbps.

Use Value: Eliminates need for discrete TVS + RC filter; maintains 90 Ω differential impedance with <0.5 pF added capacitance per line.

Use Scenario: Snubbing flyback voltage spikes in 3.3 V buck converter output stage using synchronous rectification.

IC Role / Device Role / Timing Role: Fast-recovery clamp diode absorbing inductive kickback during MOSFET turn-off transitions.

Use Value: Limits overshoot to <5.5 V with 5 ns response, reducing stress on output capacitor and load ICs.

Low-Power Sensor Bias NetworkLogic-Level Translation Interface

Use Scenario: Providing stable bias current to MEMS pressure sensor bridge in battery-powered medical wearables.

IC Role / Device Role / Timing Role: Precision current source element with temperature-stable VF across −40 °C to +85 °C.

Use Value: Delivers 100 µA bias with <±2% drift over temperature, extending single-cell coin cell life beyond 3 years.

Use Scenario: Bidirectional level shifting between 1.8 V MCU GPIO and 3.3 V peripheral I²C bus.

IC Role / Device Role / Timing Role: Passive translator using forward-biased Schottky threshold to set logic thresholds.

Use Value: Supports 1 MHz I²C clock with <10 ns propagation delay asymmetry and no external pull-up dependency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual Schottky diode array applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
NSR20F40NXT5GSingle-channel SOD-523; 40 V VRRM, 200 mA IFM, VF = 410 mV @ 1 mARequires two devices for dual functionality; lacks common-cathode integration and guard ring ESD structureSelect when board area allows discrete placement and ESD margin is managed externally
RB520S-30T2RDual SOT-23; 30 V VRRM, 200 mA IFM, VF = 370 mV @ 1 mA, tRR = 6 nsLower voltage rating limits use in 3.3 V systems with 10% tolerance; larger SOT-23 footprint increases layout areaSelect when lower VF is prioritized over voltage headroom and space constraints are relaxed

Compared with NSR20F40NXT5G and RB520S-30T2R, BAS40TW-7 uniquely combines dual common-cathode integration, 40 V rating, 5 ns tRR, and guard-ring ESD protection in the smallest SOT363 footprint-making it optimal for miniaturized, high-reliability USB and power management designs.

Availability

BAS40TW-7 is available at Aetrix Electronics and suitable for USB interface protection, DC-DC converter snubbing, low-power sensor biasing, and logic-level translation requiring stable component supply and consistent parametric performance across production lots.

Supply support for BAS40TW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The BAS40 series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for low-VF, fast-switching applications in portable electronics, power management, and interface protection where board space and ESD resilience are critical.

FAQ

What is the polarity configuration of BAS40TW-7?

BAS40TW-7 uses a common-cathode dual-diode configuration: Pins 1 and 2 are independent anodes; Pins 3, 4, and 6 are internally connected cathodes. Pin 5 is NC. This layout enables simultaneous clamping of two signals to a shared reference rail without cross-talk.

Does BAS40TW-7 meet automotive qualification standards?

BAS40TW-7 is qualified to AEC-Q101 for stress testing and manufactured in IATF 16949-certified facilities. While not pre-qualified for full PPAP submission, Diodes supports automotive customers with change control documentation and test reports upon request for integration into AEC-compliant systems.

Can BAS40TW-7 replace BAT54S in existing designs?

Yes-BAS40TW-7 is pin-compatible with BAT54S in SOT363 and matches its common-cathode topology. Key improvements include 5 ns tRR (vs. 5–6 ns typical for BAT54S), tighter VF distribution (380 mV max at 1 mA vs. 450 mV), and enhanced ESD robustness via integrated guard ring.

What is the maximum allowable reflow profile for BAS40TW-7?

BAS40TW-7 complies with J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles. Peak temperature must not exceed 260 °C for ≤30 seconds; ramp rate ≤3 °C/s; preheat 150–200 °C for 60–120 s. Full profile details are in Diodes' packaging specification document PS-0001.

BAS40TW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Diode Configuration:
3 Independent
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
40 V
Current - Average Rectified (Io) (per Diode):
200mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1 V @ 40 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
5 ns
Current - Reverse Leakage @ Vr:
200 nA @ 30 V
Operating Temperature - Junction:
-55°C ~ 125°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

BAS40TW-7 FAQ

1.How can I place an order for BAS40TW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS40TW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS40TW-7 reliable?

The price and inventory of BAS40TW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40TW-7 is usually 5 days.

3.What payment methods are accepted for BAS40TW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40TW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS40TW-7?

BAS40TW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS40TW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS40TW-7?

For technical support, including BAS40TW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40TW-7 requirements.

6.How does Aetrix verify that BAS40TW-7 is sourced from the original manufacturer or authorized distributors?

All BAS40TW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40TW-7 meets industry standards.

7.What is the process for return or replacement of BAS40TW-7?

All BAS40TW-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAS40TW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS40TW-7 part is unused and in its original packaging.

Return procedure for BAS40TW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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