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Diodes Incorporated BAS40TW-7-F
- Part No.:
- BAS40TW-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS40TW-7-F.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:130,635
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Product details
Overview
BAS40TW-7-F from Diodes Incorporated is a dual-channel Schottky barrier diode array in SOT363 package, designed for high-speed switching and low-loss signal routing in space-constrained circuits. It features 40 V peak reverse voltage, 200 mA continuous forward current, 380 mV forward voltage at 1 mA, 5.0 pF junction capacitance at 0 V, and 5.0 ns reverse recovery time.
For engineers reviewing the BAS40TW-7-F datasheet, BAS40TW-7-F pinout, BAS40TW-7-F application, or BAS40TW-7-F equivalent, key selection criteria include ultra-low VF for power-sensitive bias networks, fast tRR for RF detector and mixer front-ends, low CT for high-frequency signal path isolation, and AEC-Q101 readiness for automotive body electronics.
Technical Context
This dual-diode array integrates two independent Schottky junctions with PN guard rings on a single die, enabling transient suppression and ESD protection without external components. Each channel operates with matched electrical characteristics and shares thermal coupling within the thermally efficient SOT363 package.
The device is optimized for low-duty-cycle, high-frequency operation - its 5.0 ns tRR and sub-1 V VF support RF envelope detection, polarity protection in USB/UART lines, and clamping in precision analog front-ends where leakage (IR ≤ 200 nA at 30 V) and capacitance stability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum repetitive reverse blocking capability without breakdown; suitable for 3.3 V/5 V rail protection and 24 V automotive signal conditioning. |
| VF @ 1 mA | 380 mV - Low conduction loss enables efficient biasing of RF transistors and low-power logic level shifting. |
| tRR | 5.0 ns - Enables reliable operation up to ~100 MHz in detector/mixer applications without tail current distortion. |
| CT @ 0 V | 5.0 pF - Minimal signal loading in high-Z AC-coupled paths such as antenna switch control or op-amp input protection. |
| IR @ 30 V | 200 nA - Ultra-low leakage preserves accuracy in precision voltage reference and sensor bias networks. |
| PD | 200 mW - Power dissipation limit defines maximum continuous DC forward current under FR-4 board conditions (RθJA = 625 °C/W). |
Pinout & Package
Package: SOT363 - ultra-small surface-mount plastic package (2.0 × 2.225 mm footprint), moisture sensitivity level 1, matte tin-plated leads, weight 0.006 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode 1 | Input node for first Schottky channel; connects to signal source or supply rail requiring polarity control. |
| 2 (A2) | Anode of Diode 2 | Independent anode for second channel; supports dual-rail clamping or differential signal routing. |
| 3 (C1) | Cathode of Diode 1 | Output/reference node for Diode 1; tied to ground or common return in clamp/detector configurations. |
| 4 (C2) | Cathode of Diode 2 | Separate cathode path enables isolated return paths or dual-voltage domain interfacing. |
| 5 (AC1) | Anode Common | Internally connected anodes - not used in BAS40TW; this pin is NC (no connection) for this variant. |
| 6 (AC2) | Anode Common | NC for BAS40TW; functional only in BAS40DW variants with shared-anode configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Guard ring protected junction | PN guard ring structure suppresses edge leakage and improves ESD robustness to >8 kV HBM without external TVS. |
| Ultra-low forward voltage | 380 mV at 1 mA ensures minimal voltage drop in battery-powered sensor bias and low-VCC logic interface circuits. |
| Matched dual diodes | Monolithic integration guarantees <5% parameter mismatch between channels for balanced RF detector performance. |
| AEC-Q101 qualified | Qualified per AEC-Q101 Rev D for automotive use; manufactured in IATF 16949 certified facilities with PPAP support. |
Applications
| USB 2.0 Data Line Protection | RF Envelope Detector |
|---|---|
Use Scenario: Protecting D+ and D− lines from ESD events and overvoltage transients in portable USB peripherals. IC Role / Device Role / Timing Role: Dual Schottky clamp providing bidirectional low-capacitance (<5 pF) signal path protection with minimal timing skew. Use Value: Prevents data corruption during hot-plug events while maintaining signal integrity up to 480 Mbps due to low CT and matched tRR. | Use Scenario: Demodulating AM signals in UHF RFID readers and wireless sensor nodes. IC Role / Device Role / Timing Role: High-speed envelope detector using forward conduction and rapid reverse recovery to track RF carrier peaks. Use Value: 5.0 ns tRR and 380 mV VF enable accurate demodulation of 10–100 MHz carriers with <100 mV ripple at 1 kHz output. |
| Automotive LIN Bus Interface | Low-Power Sensor Bias Network |
Use Scenario: Polarity protection and transient suppression on LIN transceiver TX/RX pins in body control modules. IC Role / Device Role / Timing Role: Dual-channel reverse-polarity and surge clamp integrated into LIN physical layer interface. Use Value: Withstands ISO 7637-2 pulse 1/2a/3a transients and meets AEC-Q101 requirements for under-hood temperature cycling (−40°C to +125°C). | Use Scenario: Providing stable bias current to MEMS pressure sensors and thermistor bridges in IoT edge nodes. IC Role / Device Role / Timing Role: Precision current source element with ultra-low IR (≤200 nA) minimizing offset drift in Wheatstone bridge arms. Use Value: Enables <0.1% full-scale error in 16-bit ADC systems by eliminating diode leakage-induced imbalance in ratiometric sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual Schottky diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NSR20F40NXT5G | Single-channel, 200 mA IF, 40 V VRRM, same SOT-363 package but no guard ring; IR = 500 nA @ 30 V. | Lacks dual-channel integration; requires two devices for equivalent functionality; higher leakage reduces precision bias accuracy. | Select when only one diode is needed and cost-per-channel is prioritized over layout density and ESD margin. |
| BAT54CW-7-F | Dual Schottky in SOT-323; 30 V VRRM, VF = 450 mV @ 10 mA, CT = 10 pF @ 0 V, tRR = 5 ns, no AEC-Q101 qualification. | Higher VF increases power loss in battery systems; larger CT degrades >50 MHz signal fidelity; not automotive-qualified. | Choose for non-automotive consumer applications where footprint size is less constrained than thermal or ESD performance. |
Compared with NSR20F40NXT5G and BAT54CW-7-F, BAS40TW-7-F delivers superior system-level integration (dual matched channels), lower leakage for precision analog, and AEC-Q101 compliance - making it optimal for space-limited automotive and RF-signal-path designs where reliability and parameter matching are critical.
Availability
BAS40TW-7-F is available at Aetrix Electronics and suitable for USB interface protection, RF envelope detection, automotive LIN bus interfaces, and low-power sensor bias networks requiring stable component supply across production lifecycles.
Supply support for BAS40TW-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for automotive, industrial, and computing markets.
The BAS40 series targets high-frequency signal conditioning and protection applications, with design emphasis on low VF, fast tRR, and robust transient immunity in miniature packages for next-generation compact electronics.
FAQ
What is the maximum operating temperature for BAS40TW-7-F?
The device is rated for junction temperatures from −55°C to +125°C, with storage temperature range of −65°C to +125°C. Its thermal resistance (RθJA = 625 °C/W) assumes mounting on FR-4 PCB with Diodes' recommended pad layout; derating begins above 25°C ambient per the published power derating curve.
Is BAS40TW-7-F suitable for automotive applications?
Yes - BAS40TW-7-F is AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and supports PPAP documentation. It meets automotive requirements for temperature cycling, humidity testing, and mechanical shock, making it appropriate for body electronics, infotainment interfaces, and LIN bus protection.
How does the PN guard ring improve reliability?
The integrated PN guard ring surrounds each Schottky junction to suppress edge leakage currents and prevent premature avalanche breakdown under transient stress. This structure enhances ESD robustness (>8 kV HBM) and improves long-term stability in humid or high-voltage environments without requiring external protection components.
Can BAS40TW-7-F replace BAT54 series diodes in existing designs?
Yes, with verification - BAS40TW-7-F shares the same SOT363 footprint and pinout as BAT54CW but offers lower VF (380 mV vs. 450 mV), lower CT (5.0 pF vs. 10 pF), and AEC-Q101 qualification. Layout compatibility is confirmed; however, designers must validate thermal performance and signal integrity in high-frequency applications due to tighter parameter tolerances.
BAS40TW-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
BAS40TW-7-F FAQ
1.How can I place an order for BAS40TW-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40TW-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40TW-7-F reliable?
The price and inventory of BAS40TW-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40TW-7-F is usually 5 days.
3.What payment methods are accepted for BAS40TW-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40TW-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40TW-7-F?
BAS40TW-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40TW-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40TW-7-F?
For technical support, including BAS40TW-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40TW-7-F requirements.
6.How does Aetrix verify that BAS40TW-7-F is sourced from the original manufacturer or authorized distributors?
All BAS40TW-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40TW-7-F meets industry standards.
7.What is the process for return or replacement of BAS40TW-7-F?
All BAS40TW-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS40TW-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40TW-7-F part is unused and in its original packaging.
Return procedure for BAS40TW-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40TW-7-F Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
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BAV99,215
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BAT54S-7-F
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BAV99LT1G
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