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Nexperia USA Inc. BAS40VYX
- Part No.:
- BAS40VYX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAS40VYX.pdf
- Description:
- DIODE ARR SCHOT 40V 120MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,905
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Product details
Overview
BAS40VY from Nexperia is a general-purpose triple Schottky diode in SOT363-3 (SC-88) package, electrically isolated per diode, rated for 40 V reverse voltage, 120 mA forward current, and 380 mV forward voltage at 1 mA, used in ultra high-speed switching and voltage clamping circuits on compact PCBs.
For engineers reviewing the BAS40VY datasheet, BAS40VY pinout, BAS40VY application, or BAS40VY equivalent, key selection criteria include per-diode isolation, low 5 pF capacitance at 0 V, 1 µA reverse leakage at 30 V, thermal resistance of 440 K/W to solder point, and compatibility with reflow/wave soldering footprints for space-constrained designs.
Technical Context
This triple Schottky diode integrates three independent anode–cathode pairs in a single surface-mount package, with no internal connection between diodes-enabling flexible routing in multi-rail clamping or signal steering. Each diode exhibits fast switching due to low junction capacitance (5 pF) and low forward voltage (380 mV @ 1 mA).
Thermal performance is defined by junction-to-solder-point resistance of 440 K/W under specified FR4 mounting conditions, supporting reliable operation up to 150 °C junction temperature. The device operates within −55 °C to +150 °C ambient range and withstands non-repetitive peak forward current up to 1.5 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 40 V - Maximum blocking voltage per diode before breakdown; defines safe operating range in clamping or reverse-polarity protection. |
| Forward Current (IF) | 120 mA - Continuous DC current rating per diode; supports moderate signal-level switching without derating on standard FR4. |
| Forward Voltage (VF) | 380 mV @ 1 mA - Low conduction loss at light load; critical for battery-powered logic-level clamping and low-power signal routing. |
| Reverse Leakage (IR) | 1 µA @ 30 V - Minimal off-state current; preserves signal integrity in high-impedance nodes and reduces standby power loss. |
| Capacitance (Cd) | 5 pF @ 0 V, 1 MHz - Enables >100 MHz signal handling; suitable for RF detector inputs and high-speed data line protection. |
| Thermal Resistance (Rth(j-sp)) | 440 K/W - Junction-to-solder-point value under defined FR4 pad layout; informs thermal design margin for sustained 120 mA operation. |
Pinout & Package
Package: SOT363-3 (TSSOP6), 1.3 mm × 2.2 mm × 0.95 mm body height, 0.65 mm lead pitch, plastic surface-mount package with exposed cathode-side thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 | Anode of Diode 1 - Connects to positive side of first independent Schottky path; routed separately for isolation-critical applications. |
| 2 | A2 | Anode of Diode 2 - Electrically isolated anode node; enables dual-rail clamping or independent signal steering without crosstalk. |
| 3 | A3 | Anode of Diode 3 - Third isolated anode terminal; supports triple-voltage rail conditioning or redundant protection paths. |
| 4 | K3 | Cathode of Diode 3 - Common cathode-side connection point for third diode; shares thermal pad with pins 5 and 6 for improved heat dissipation. |
| 5 | K2 | Cathode of Diode 2 - Independent cathode node; allows individual cathode biasing or separate return paths in multi-channel systems. |
| 6 | K1 | Cathode of Diode 1 - First cathode terminal; designated pin 6 in TSSOP6 outline; aligned with standard SOT363-3 footprint for automated assembly. |
Key Features
| Feature | Design Value |
|---|---|
| Triple electrically isolated diodes | Enables independent routing of three signal or power paths without shared junctions-critical for mixed-voltage domain clamping. |
| Low 5 pF capacitance | Minimizes signal distortion and timing skew in >100 MHz digital or RF interface lines, including USB 2.0 and LVDS receivers. |
| 380 mV VF @ 1 mA | Reduces voltage drop in low-current logic-level translation or ESD clamp bias networks, preserving noise margins in 1.8 V/3.3 V systems. |
| 1 µA IR @ 30 V | Ensures negligible leakage in high-impedance sample-and-hold or analog switch control lines, preventing drift or false triggering. |
Applications
| USB 2.0 Data Line Protection | Multi-Rail Power Sequencing |
|---|---|
Use Scenario: Clamping transient overvoltage on D+ and D− lines during hot-plug events while maintaining signal integrity. IC Role / Device Role / Timing Role: Discrete Schottky clamp diode pair (D1/D2) with third diode (D3) for VBUS monitoring or auxiliary bias. Use Value: 5 pF capacitance avoids signal rise-time degradation; 380 mV VF ensures clamping threshold stays below 0.7 V, protecting 3.3 V transceivers. | Use Scenario: Controlling power-up order across 1.2 V, 1.8 V, and 3.3 V rails using diode-OR'd enable signals with independent thresholds. IC Role / Device Role / Timing Role: Triple-anode configuration allows separate anode connections to each rail's enable output, with shared cathode return. Use Value: Electrical isolation prevents backfeed between rails; 40 V VR rating accommodates margin above highest rail voltage. |
| LVDS Receiver Input Clamp | Low-Power Logic-Level Translation |
Use Scenario: Protecting differential receiver inputs against ESD and overshoot in industrial fieldbus interfaces. IC Role / Device Role / Timing Role: One diode per input (D1/D2) clamps to local supply/GND; third diode (D3) provides reference or bias path. Use Value: 1 µA IR preserves high-impedance termination; low VF avoids false triggering of internal receiver comparators. | Use Scenario: Translating 1.8 V GPIO outputs to 3.3 V logic inputs in battery-powered IoT sensors. IC Role / Device Role / Timing Role: Anode tied to 1.8 V source, cathode pulled to 3.3 V rail via resistor-Schottky forward drop sets translation threshold. Use Value: 380 mV VF yields ~2.18 V output swing, meeting 3.3 V VIH minimum; triple configuration supports three independent I/O channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar triple Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Single-channel dual-Schottky in SOT23-6; no per-diode isolation; higher VF (450 mV @ 1 mA). | Not suitable for independent rail clamping; limited to paired-channel use only. | Select only when board space permits larger SOT23-6 and electrical isolation is unnecessary. |
| RB050M-30 | Triple Schottky in SOT-363 but with common cathode; 30 V VR rating; 10 pF capacitance. | Lower voltage rating restricts use to ≤3.3 V systems; higher capacitance limits >50 MHz applications. | Prefer for cost-sensitive 3.3 V-only designs where 40 V margin and 5 pF are not required. |
Compared with DMN3026LSD-13 and RB050M-30, BAS40VY uniquely delivers per-diode isolation, 40 V blocking, and 5 pF capacitance in SOT363-3-making it optimal for multi-rail, high-speed, and space-constrained clamping where channel independence and bandwidth matter.
Availability
BAS40VY is available at Aetrix Electronics and suitable for USB 2.0 interface protection, LVDS receiver clamping, and multi-rail power sequencing requiring stable component supply, consistent SOT363-3 footprint availability, and long-term production support.
Supply support for BAS40VY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
BAS40VY belongs to Nexperia's general-purpose Schottky diode product line, engineered for compact, high-speed signal integrity applications where low capacitance, low forward voltage, and per-diode isolation are mandatory.
FAQ
What is the maximum continuous forward current per diode in BAS40VY?
The maximum continuous forward current per diode is 120 mA under standard FR4 PCB mounting conditions (single-sided copper, tin-plated, standard footprint). This rating assumes one diode is loaded at a time; simultaneous conduction across all three diodes requires thermal derating based on Rth(j-sp) = 440 K/W and ambient temperature limits.
Can BAS40VY be used in automotive applications?
No-BAS40VY is not automotive-qualified. Nexperia explicitly states in its legal disclaimers that unless a product data sheet expressly declares automotive qualification, the device is neither tested nor warranted for automotive use. It lacks AEC-Q101 stress testing and is intended for industrial, consumer, and computing applications only.
How does the pin configuration support independent diode operation?
Pins 1–3 are dedicated anodes (A1–A3) and pins 4–6 are dedicated cathodes (K3–K1), with no internal connection between any anode and cathode except within each diode pair. This full electrical isolation allows each diode to operate with different bias voltages, currents, or signal domains-essential for multi-rail clamping or independent signal routing.
What is the recommended soldering profile for BAS40VY?
The manufacturer specifies reflow soldering using the footprint in Figure 6 (sot363-3_fr), with solder paste stencil apertures sized for 0.5 mm × 0.5 mm pads (4×), 0.6 mm × 0.6 mm pads (4×), and 0.4 mm × 0.4 mm pads (2×). Peak reflow temperature must not exceed 260 °C for ≤10 seconds, per JEDEC J-STD-020.
BAS40VYX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 3 Independent
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 120mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 µA @ 40 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAS40VYX FAQ
1.How can I place an order for BAS40VYX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40VYX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40VYX reliable?
The price and inventory of BAS40VYX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40VYX is usually 5 days.
3.What payment methods are accepted for BAS40VYX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40VYX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40VYX?
BAS40VYX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40VYX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40VYX?
For technical support, including BAS40VYX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40VYX requirements.
6.How does Aetrix verify that BAS40VYX is sourced from the original manufacturer or authorized distributors?
All BAS40VYX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40VYX meets industry standards.
7.What is the process for return or replacement of BAS40VYX?
All BAS40VYX units undergo pre-shipment inspection (PSI). If there is an issue with BAS40VYX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40VYX part is unused and in its original packaging.
Return procedure for BAS40VYX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40VYX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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