Diodes Incorporated BAS40W-06-7-F
- Part No.:
- BAS40W-06-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAS40W-06-7-F.pdf
- Description:
- DIODE ARR SCHOT 40V 200MA SOT323
- Quantity:
- Payment:

- Shipping:

Inventory:4,256
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Product details
Overview
BAS40W-06-7-F from Diodes Incorporated is a surface-mount Schottky barrier diode in SOT323 package, rated for 40 V peak repetitive reverse voltage, 200 mA forward current, and 5.0 ns reverse recovery time. It delivers low forward voltage drop (380 mV at 1.0 mA), ultra-fast switching, and integrated PN junction guard ring for ESD/transient protection-used in DC-DC converter output rectification and high-frequency signal clamping.
For engineers reviewing the BAS40W-06-7-F datasheet, BAS40W-06-7-F pinout, BAS40W-06-7-F application, or BAS40W-06-7-F equivalent, key selection criteria include its 40 V VRRM rating, sub-1 V VF at 40 mA, 5.0 ns trr, 5.0 pF CT at 0 V, and SOT323 thermal resistance of 625 °C/W-critical for compact power management and RF detector designs.
Technical Context
This Schottky diode employs a platinum-silicide (PtSi) or similar low-barrier metal-semiconductor junction to achieve fast switching and low forward conduction loss. Its guard ring structure isolates the active junction from surface contamination and edge breakdown, enhancing reliability under transient stress.
Designed for high-frequency operation up to ~1 GHz, it exhibits minimal stored charge and negligible minority-carrier storage-enabling clean turn-off in flyback snubbers and RF envelope detection. The SOT323 package supports reflow soldering per J-STD-020 Level 1 moisture sensitivity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 40 V - Maximum repetitive reverse blocking voltage before avalanche; defines safe operating range in clamp and rectifier circuits |
| VF @ 1.0 mA | 380 mV - Low conduction loss at light load; reduces standby power in battery-powered signal paths |
| trr | 5.0 ns - Ultra-fast recovery enables use in >100 MHz switching applications without tail current issues |
| CT @ 0 V | 5.0 pF - Minimal junction capacitance preserves signal integrity in RF detector and mixer bias networks |
| RθJA | 625 °C/W - Thermal resistance limits power dissipation to 200 mW at TA = 25°C on FR4 board with standard pad layout |
| IR @ 30 V | 200 nA - Low leakage maintains accuracy in precision sample-and-hold and sensor interface circuits |
Pinout & Package
Package: SOT323 - ultra-small plastic surface-mount package (2.0 × 2.225 × 0.9 mm), lead-free, RoHS-compliant, with matte tin-plated terminals solderable per MIL-STD-202 Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pin 1) | Forward current entry point | Connected to lower-potential node in rectifier/clamp; polarity marked by cathode band on package top view |
| Cathode (Pin 2) | Forward current exit / reverse blocking terminal | Connected to higher-potential node; carries full reverse voltage during off-state; guards against ESD via integrated PN ring |
| Collector/Case (Pin 3) | Thermal and mechanical anchor | Non-electrical; internal die attach paddle; improves heat spreading but not electrically connected to die |
Key Features
| Feature | Design Value |
|---|---|
| Low VF at low current | 380 mV @ 1.0 mA enables efficient biasing in low-power analog front-ends without significant voltage offset |
| Guard ring protection | Integrated PN junction ring suppresses surface leakage and improves ESD robustness to >8 kV HBM (per design intent) |
| Ultra-small footprint | SOT323 (2.0 × 2.225 mm) saves PCB area in space-constrained IoT sensor nodes and wearable power rails |
| Fast trr with low Qrr | 5.0 ns recovery with near-zero stored charge minimizes switching loss in 1–10 MHz DC-DC synchronous rectifiers |
Applications
| DC-DC Converter Output Rectification | RF Signal Detection & Clamping |
|---|---|
Use Scenario: Used as secondary-side rectifier in non-isolated buck converters powering microcontrollers and sensors. IC Role / Device Role / Timing Role: Schottky rectifier providing unidirectional current flow with minimal conduction loss and no minority-carrier delay. Use Value: 380 mV VF at light load extends battery life; 5.0 ns trr prevents shoot-through in high-frequency (>2 MHz) designs. | Use Scenario: Envelope detector in 2.4 GHz ISM-band receiver front-end for wireless sensor nodes. IC Role / Device Role / Timing Role: Passive RF detector diode converting RF amplitude to baseband DC voltage. Use Value: 5.0 pF CT ensures minimal RF shunting; low IR preserves detector sensitivity at low input power levels. |
| High-Speed Logic Level Translation | ESD-Protected I/O Clamping |
Use Scenario: Bidirectional level shifter between 1.8 V and 3.3 V domains in FPGA configuration interfaces. IC Role / Device Role / Timing Role: Passive clamping diode limiting voltage excursion beyond supply rails during signal transitions. Use Value: Fast trr avoids signal distortion; low VF ensures tight clamping threshold (~0.4 V above rail). | Use Scenario: Input protection network on USB 2.0 data lines in industrial control modules. IC Role / Device Role / Timing Role: Transient voltage suppressor with integrated guard ring for system-level ESD immunity. Use Value: Guard ring structure enables reliable 8 kV HBM protection without external TVS; SOT323 fits tight trace routing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBR0540T1G (ON Semiconductor) | Same 40 V VRRM, but SOD-123 package (larger); VF = 450 mV @ 1.0 mA; trr = 10 ns | Higher thermal mass suits higher average current (500 mA IF), but slower switching limits RF use | Select when board space allows and average current exceeds 200 mA |
| NSR0240HT1G (onsemi) | SOT-23 package; VF = 370 mV @ 1.0 mA; trr = 4.5 ns; CT = 4.5 pF; same 40 V rating | Nearly identical RF performance, but SOT-23 has higher RθJA (700 °C/W) and larger footprint | Prefer for marginally faster trr where thermal derating permits |
Compared with MBR0540T1G and NSR0240HT1G, BAS40W-06-7-F offers the smallest footprint (SOT323), lowest thermal resistance among ultra-small Schottkys, and optimized guard ring for ESD-critical I/O-making it ideal for miniaturized, high-frequency, and robust interface designs.
Availability
BAS40W-06-7-F is available at Aetrix Electronics and suitable for DC-DC converter output rectification, RF envelope detection, high-speed logic level translation, and ESD-protected I/O clamping requiring stable component supply across automotive infotainment, industrial IoT gateways, and portable medical devices.
Supply support for BAS40W-06-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BAS40W series belongs to Diodes' high-speed Schottky diode product line, engineered specifically for space-constrained, high-frequency power and signal conditioning applications where low VF, fast trr, and robust ESD protection are essential.
FAQ
What is the maximum junction temperature for BAS40W-06-7-F?
The device has an operating junction temperature range of –55 °C to +125 °C. At ambient temperatures above 25 °C, power dissipation must be derated linearly per Fig. 4 in the datasheet, reaching zero at +125 °C ambient due to its 625 °C/W RθJA on FR4 board.
Is BAS40W-06-7-F suitable for automotive applications?
The standard BAS40W-06-7-F is not AEC-Q200 qualified. However, Diodes offers the automotive-grade variant BAS40WQ under a separate datasheet, which meets AEC-Q200 requirements and is qualified for under-hood and infotainment systems.
How does the guard ring improve reliability?
The integrated PN junction guard ring surrounds the active Schottky junction to prevent premature edge breakdown under high electric field stress, reducing surface leakage and improving robustness against ESD events and humidity-induced degradation-verified in Diodes' qualification testing per JESD22-A114.
Can BAS40W-06-7-F replace BAS40W-04-7-F or BAS40W-05-7-F in a design?
Yes-BAS40W-04, -05, and -06 share identical electrical specifications and SOT323 packaging. Differences are only in date-code marking and internal wafer lot traceability; all three are functionally interchangeable in circuit design and layout.
BAS40W-06-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 40 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 200 nA @ 30 V
- Operating Temperature - Junction:
- -55°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAS40W-06-7-F FAQ
1.How can I place an order for BAS40W-06-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS40W-06-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS40W-06-7-F reliable?
The price and inventory of BAS40W-06-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS40W-06-7-F is usually 5 days.
3.What payment methods are accepted for BAS40W-06-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS40W-06-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS40W-06-7-F?
BAS40W-06-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS40W-06-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS40W-06-7-F?
For technical support, including BAS40W-06-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS40W-06-7-F requirements.
6.How does Aetrix verify that BAS40W-06-7-F is sourced from the original manufacturer or authorized distributors?
All BAS40W-06-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS40W-06-7-F meets industry standards.
7.What is the process for return or replacement of BAS40W-06-7-F?
All BAS40W-06-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAS40W-06-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS40W-06-7-F part is unused and in its original packaging.
Return procedure for BAS40W-06-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS40W-06-7-F Tags

-
BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

-
BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

-
BAS40-04LT1G
onsemi

-
MMBD1503-TP
Micro Commercial Co

-
BAV99WT1G
onsemi
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