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Nexperia USA Inc. BAS416,115
- Part No.:
- BAS416,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAS416,115.pdf
- Description:
- DIODE GEN PURP 75V 200MA SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:4,664
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Product details
Overview
BAS416,115 from Nexperia is a low-leakage epitaxial switching diode in SOD323 package, designed for precision signal routing and bias control in space-constrained SMD circuits. It delivers typ. 3 pA reverse leakage at 75 V, 0.8 µs reverse recovery time, and 85 V repetitive peak reverse voltage - enabling reliable operation in high-impedance analog front-ends and sample-hold circuits.
For engineers reviewing the BAS416,115 datasheet, BAS416,115 pinout, BAS416,115 application, or BAS416,115 equivalent, key selection criteria include ultra-low IR at elevated VR, fast trr under low IF/IR test conditions, thermal derating per FR4 PCB layout, and SOD323 footprint compatibility with automated placement.
Technical Context
The BAS416,115 employs an epitaxial silicon structure optimized for low junction capacitance (2 pF at 0 V) and minimal minority-carrier storage, resulting in sub-microsecond reverse recovery. Its low-leakage performance is maintained across −55 °C to 150 °C junction temperature range, with IR rising to only 3 nA at 150 °C under 75 V stress.
Rated for 500 mA repetitive peak forward current and 200 mA continuous forward current at 25 °C ambient, it operates within a 450 K/W junction-to-ambient thermal resistance on standard FR4 PCB - requiring careful thermal management above 70 °C ambient per Fig. 1 derating curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - supports rail-to-rail signal clamping up to 85 V peak without breakdown |
| IR @ VR=75 V | 3 pA typ. - enables nanoampere-level bias stability in high-Z sensor interfaces |
| trr | 0.8 µs typ. - ensures clean switching in <1 MHz sampling and multiplexing circuits |
| VF @ IF=50 mA | 1.1 V - minimizes forward drop in low-power logic-level clamping paths |
| Cd @ VR=0 V | 2 pF - reduces capacitive loading in RF detector and timing node applications |
| Ptot | 250 mW @ Tamb ≤ 25 °C - defines maximum dissipation before thermal derating applies |
Pinout & Package
Supplied in SOD323 surface-mount plastic package (1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch), with gull-wing leads suitable for reflow and wave soldering per Figures 8–9.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K (cathode) | Connected to higher-potential node during reverse bias; marked side of package aligns with cathode band |
| 2 | A (anode) | Connected to lower-potential node during conduction; polarity must match schematic symbol orientation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low reverse leakage | 3 pA typical at 75 V - preserves signal integrity in high-impedance feedback networks |
| Fast reverse recovery | 0.8 µs typical - enables accurate sampling in 1 MSPS data acquisition systems |
| SOD323 footprint | 1.7 mm × 1.25 mm body - fits dense layouts where larger packages (e.g., SOD123) are prohibitive |
| Thermal robustness | 150 °C max junction temperature - supports operation in sealed industrial enclosures without forced cooling |
Applications
| High-Impedance Sensor Biasing | Low-Power Signal Clamping |
|---|---|
|
Use Scenario: Biasing photodiode or piezoelectric sensor outputs into op-amp input stages. IC Role / Device Role / Timing Role: Leakage-suppressing blocking diode in transimpedance amplifier feedback path. Use Value: 3 pA leakage prevents >1 mV offset drift at 1 GΩ feedback impedance, preserving sub-µV resolution. |
Use Scenario: Protecting ADC inputs from transient overvoltage in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Fast-reacting clamp limiting input swing to AVDD/GND rails. Use Value: 0.8 µs trr limits clamp-induced distortion during 100 kHz sampling windows. |
| Sample-and-Hold Hold Capacitor Isolation | RF Detector DC Blocking |
|
Use Scenario: Isolating hold capacitor from charging circuitry in precision analog sample-and-hold ICs. IC Role / Device Role / Timing Role: Low-leakage switch maintaining capacitor voltage between sampling cycles. Use Value: Sub-picoampere leakage extends hold time beyond 100 ms at 100 pF, meeting 16-bit settling requirements. |
Use Scenario: Blocking DC offset in 2.4 GHz Wi-Fi front-end envelope detectors. IC Role / Device Role / Timing Role: Low-capacitance series element minimizing RF insertion loss. Use Value: 2 pF Cd contributes <0.1 dB loss at 2.4 GHz, preserving detector sensitivity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS116,115 | Higher IR (5 nA typ. @ 75 V); same SOD323 package and VRRM | Less suitable for >100 MΩ bias networks due to 1,600× higher leakage | Select only when cost sensitivity outweighs leakage-critical performance |
| 1N4148W,115 | Slower trr (4 ns min., 4 µs max.); higher Cd (4 pF); TO-236AB package | Not viable for >500 kHz switching or space-constrained layouts | Use only if legacy design requires TO-236AB footprint and leakage >100 pA is acceptable |
Compared with BAS116,115 and 1N4148W,115, the BAS416,115 uniquely balances ultra-low leakage, sub-microsecond recovery, and SOD323 miniaturization - making it the sole choice for high-resolution sensor interfaces where both leakage and speed constrain system accuracy.
Availability
BAS416,115 is available at Aetrix Electronics and suitable for high-impedance sensor biasing, low-power signal clamping, and sample-and-hold hold capacitor isolation requiring stable component supply and consistent SOD323 packaging.
Supply support for BAS416,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process control and automotive-grade quality systems.
The BAS416,115 belongs to Nexperia's low-leakage switching diode product line, engineered specifically for precision analog signal conditioning in consumer, industrial, and medical instrumentation where nanoscale leakage and fast recovery define system fidelity.
FAQ
What is the maximum continuous forward current for BAS416,115 at 70 °C ambient?
Per Figure 1, the maximum continuous forward current drops to 120 mA at 70 °C ambient on FR4 PCB. This derating results from its 450 K/W Rth(j-a); exceeding this current risks junction temperature exceeding 150 °C even with modest power dissipation.
Does BAS416,115 meet automotive qualification standards?
No. The revision history explicitly states that BAS416,115 was changed to non-automotive qualification in v.4 (2024). Automotive alternatives - such as BAS416-Q - are separately qualified and marked; this part lacks AEC-Q101 testing and is not warranted for automotive use.
How does the 3 pA leakage specification translate to real-world circuit impact?
At 3 pA leakage, a 1 GΩ feedback resistor develops only 3 mV offset error. In contrast, a 1 nA-leakage diode would cause 1 V offset - making BAS416,115 essential for maintaining sub-10 µV accuracy in precision transimpedance amplifiers used in medical ECG front-ends.
Can BAS416,115 be used in RF applications above 1 GHz?
Yes - its 2 pF capacitance at 0 V yields ~66 Ω reactance at 1 GHz, and its 0.8 µs trr is irrelevant at RF frequencies. However, parasitic inductance from SOD323 leads becomes dominant above 3 GHz; verified performance up to 2.4 GHz is documented in RF detector reference designs.
BAS416,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- 150°C (Max)
BAS416,115 FAQ
1.How can I place an order for BAS416,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS416,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS416,115 reliable?
The price and inventory of BAS416,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS416,115 is usually 5 days.
3.What payment methods are accepted for BAS416,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS416,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS416,115?
BAS416,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS416,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS416,115?
For technical support, including BAS416,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS416,115 requirements.
6.How does Aetrix verify that BAS416,115 is sourced from the original manufacturer or authorized distributors?
All BAS416,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS416,115 meets industry standards.
7.What is the process for return or replacement of BAS416,115?
All BAS416,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAS416,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS416,115 part is unused and in its original packaging.
Return procedure for BAS416,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS416,115 Tags
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