My Inquiry
My Account
Nexperia USA Inc. BAS416-QF
- Part No.:
- BAS416-QF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAS416-QF.pdf
- Description:
- BAS416-Q/SOD323/SOD2
- Quantity:
- Payment:
- Shipping:
Inventory:7,790
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAS416-Q from Nexperia is a low-leakage epitaxial switching diode in SOD323 package, rated for 85 V repetitive peak reverse voltage, 500 mA repetitive peak forward current, and 0.8 µs typical reverse recovery time; used in automotive signal routing and precision biasing where leakage below 5 nA at 75 V is critical.
For engineers reviewing the BAS416-Q datasheet, BAS416-Q pinout, BAS416-Q application, or BAS416-Q equivalent, key selection criteria include reverse leakage at elevated temperature, switching speed under 10 mA test conditions, thermal resistance (450 K/W), and AEC-Q101 qualification status for automotive-grade reliability.
Technical Context
This discrete silicon switching diode uses an epitaxial construction to achieve ultra-low reverse leakage (3 pA typ. at 25 °C) while maintaining medium-speed recovery (0.8 µs typ.) and robust surge capability (4 A non-repetitive peak forward current). Its junction-to-ambient thermal resistance of 450 K/W reflects standard FR4 PCB mounting with single-sided copper.
The device operates across −55 °C to +150 °C ambient and supports pulsed reverse voltage up to 85 V with continuous reverse voltage limited to 75 V. Forward voltage ranges from 0.9 V at 1 mA to 1.25 V at 150 mA, enabling stable biasing in low-current sensor interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V max repetitive peak reverse voltage - defines maximum transient overvoltage tolerance in automotive CAN/LIN line protection |
| IFRM | 500 mA max repetitive peak forward current - supports sustained signal routing in multiplexed body control modules |
| IR @ 75 V | 0.003–5 nA - enables precision voltage reference hold and low-power sleep-mode leakage control |
| trr | 0.8–3 µs - ensures clean edge transitions in 1–10 MHz clock distribution and digital logic clamping |
| VF @ 50 mA | 1.1 V typ. - minimizes forward drop in series-connected ESD protection paths without excessive power loss |
| Rth(j-a) | 450 K/W - sets thermal derating slope on standard FR4 PCBs; limits continuous forward current to 200 mA at 70 °C ambient |
| AEC-Q101 | Qualified - confirms suitability for automotive powertrain, chassis, and infotainment systems per stress test requirements |
Pinout & Package
SOD323 plastic surface-mount package: 1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, cathode marked with bar on top surface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K (cathode) | Connected to higher-potential node during forward conduction; polarity marker for correct orientation in ESD clamp or reverse-bias protection |
| 2 | A (anode) | Connected to lower-potential node; forms current path when forward biased; terminal for PCB trace routing in compact layout |
Key Features
| Feature | Design Value |
|---|---|
| Low leakage current | 3 pA typical at 25 °C - preserves battery life in always-on vehicle modules by minimizing standby current drain |
| Medium-speed switching | 0.8 µs trr - balances fast response with low EMI generation in 1–5 MHz signal conditioning circuits |
| AEC-Q101 qualification | Stress-tested for automotive environments - eliminates need for additional qualification testing in Tier-1 designs |
| SOD323 footprint | 1.7 × 1.25 mm outline - enables high-density placement in space-constrained ADAS sensor housings and LED driver PCBs |
Applications
| Automotive LIN Bus Protection | Low-Power Sensor Biasing |
|---|---|
Use Scenario: Protecting LIN transceiver I/O pins against load dump and ESD events in body electronics modules. IC Role / Device Role / Timing Role: Reverse-biased clamping diode placed between LIN line and ground, conducting only during overvoltage transients. Use Value: Leakage <5 nA at 12 V ensures no measurable impact on LIN bus idle-state voltage stability during sleep mode. |
Use Scenario: Providing stable bias current to MEMS pressure sensor bridges in tire pressure monitoring systems (TPMS). IC Role / Device Role / Timing Role: Precision current source element in constant-current bias network for Wheatstone bridge excitation. Use Value: 3 pA leakage prevents offset drift in microamp-level bridge currents, preserving ±0.5% measurement accuracy over temperature. |
| High-Voltage Signal Routing | ESD Clamp in Infotainment USB Port |
Use Scenario: Steering analog video signals (e.g., backup camera feed) through multiplexer ICs in head unit designs. IC Role / Device Role / Timing Role: Series-switching diode isolating signal path during channel selection; conducts only when enabled. Use Value: 85 V VRRM withstands transient coupling from adjacent 12 V power traces without breakdown or parameter shift. |
Use Scenario: Secondary ESD protection stage on USB D+/D− lines downstream of TVS diodes in automotive infotainment head units. IC Role / Device Role / Timing Role: Low-capacitance (2 pF) shunt diode that activates after primary TVS clamps, absorbing residual energy. Use Value: 2 pF capacitance avoids signal integrity degradation at 480 Mbps USB 2.0 data rates while adding <0.1 dB insertion loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAS116,115 | Higher leakage (50 nA max @ 75 V), same SOD323 package and 85 V VRRM | Acceptable in non-sleep-critical automotive modules where standby current >100 nA is tolerable | Select when cost sensitivity outweighs ultra-low leakage requirement and thermal derating is less constrained |
| 1N4148W-Q | Higher trr (4 ns min, but 4 µs max), 100 V VRRM, 300 mA IFRM, not AEC-Q101 qualified | Suitable for non-automotive industrial controls; lacks automotive qualification and thermal margin for 150 °C junction operation | Choose only for legacy industrial designs requiring higher VRRM and where AEC-Q101 is not mandated |
Compared with BAS116,115 and 1N4148W-Q, the BAS416-Q uniquely combines sub-5 nA leakage, AEC-Q101 qualification, and 150 °C junction rating-making it the sole option for thermally demanding, always-on automotive subsystems requiring nanoscale leakage control.
Availability
BAS416-Q is available at Aetrix Electronics and suitable for automotive LIN bus protection, low-power sensor biasing, and high-voltage signal routing requiring stable component supply across production lifecycles.
Supply support for BAS416-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.
The BAS416-Q belongs to Nexperia's AEC-Q101-qualified low-leakage diode product line, engineered specifically for automotive signal integrity and ultra-low-power system management in harsh thermal environments.
FAQ
What is the maximum continuous forward current for BAS416-Q at 100 °C ambient?
At 100 °C ambient temperature, the maximum continuous forward current is approximately 120 mA, derived from the derating curve in Figure 1 of the datasheet: starting from 200 mA at 25 °C and linearly decreasing to zero at 150 °C ambient, with a slope of −4 mA/°C.
Does BAS416-Q support wave soldering, and what are the recommended footprint dimensions?
Yes, BAS416-Q supports wave soldering using the footprint shown in Figure 9: two 0.6 mm × 1.2 mm solder lands with 1.5 mm spacing, 2.75 mm overall length, and preferred transport direction aligned with the cathode-anode axis to ensure uniform wetting and avoid tombstoning.
How does the 3 pA typical leakage compare to performance at 150 °C junction temperature?
At 150 °C junction temperature and 75 V reverse bias, typical leakage rises to 3 nA (per Figure 4), representing a 1000× increase over room-temperature value-still within the 80 nA maximum limit, confirming stable operation in under-hood environments.
Is the SOD323 package of BAS416-Q compatible with IPC-7351B density level 'N'?
Yes, the SOD323 outline matches IPC-7351B 'N' density: land pattern dimensions (0.5 mm × 1.1 mm pads, 1.35 mm center-to-center) align with the 'nominal' tolerance band, and the 1.7 mm × 1.25 mm body fits within the recommended courtyard clearance of 0.2 mm per side.
BAS416-QF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- 150°C
BAS416-QF FAQ
1.How can I place an order for BAS416-QF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS416-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS416-QF reliable?
The price and inventory of BAS416-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS416-QF is usually 5 days.
3.What payment methods are accepted for BAS416-QF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS416-QF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS416-QF?
BAS416-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS416-QF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS416-QF?
For technical support, including BAS416-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS416-QF requirements.
6.How does Aetrix verify that BAS416-QF is sourced from the original manufacturer or authorized distributors?
All BAS416-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS416-QF meets industry standards.
7.What is the process for return or replacement of BAS416-QF?
All BAS416-QF units undergo pre-shipment inspection (PSI). If there is an issue with BAS416-QF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS416-QF part is unused and in its original packaging.
Return procedure for BAS416-QF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAS416-QF Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
