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Nexperia USA Inc. BAS416Z
- Part No.:
- BAS416Z
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Diodes
- Package:
- SC-76, SOD-323
- Datasheet:
-
BAS416Z.pdf
- Description:
- DIODE GEN PURP 75V 200MA SOD323
- Quantity:
- Payment:
- Shipping:
Inventory:26,303
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Product details
Overview
BAS416Z from Nexperia is a low-leakage epitaxial switching diode in SOD323 package, designed for precision signal routing and voltage clamping in space-constrained SMD circuits. It delivers typ. 3 pA reverse leakage at 75 V, 0.8 µs reverse recovery time, and 85 V repetitive peak reverse voltage - enabling high-accuracy biasing in sensor front-ends and sample-and-hold circuits.
For engineers reviewing the BAS416Z datasheet, BAS416Z pinout, BAS416Z application, or BAS416Z equivalent, key selection criteria include ultra-low IR at elevated temperature, fast trr under low IF/IR test conditions, thermal resistance in FR4 mounting, and compatibility with reflow/wave soldering footprints per SOD323 outline.
Technical Context
The BAS416Z employs an epitaxial silicon structure optimized for minimal minority-carrier storage, resulting in sub-microsecond reverse recovery (trr = 0.8 µs typ.) under standardized 10 mA IF/IR conditions. Its low-leakage performance is sustained across junction temperatures up to 150 °C, with IR rising only to 3 nA typ. at VR = 75 V and Tj = 150 °C.
Designed for surface-mounted operation on FR4 PCBs with single-sided copper, it exhibits Rth(j-a) = 450 K/W in free air and supports continuous forward current up to 200 mA at Tamb ≤ 25 °C. The device is non-automotive qualified and rated per IEC 60134 absolute maximum limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage (IR) | Typ. 0.003 nA at VR = 75 V, Tj = 25 °C - enables stable DC bias in high-impedance nodes |
| Reverse recovery time (trr) | Typ. 0.8 µs at IF = IR = 10 mA, RL = 100 Ω - supports medium-speed switching up to ~500 kHz |
| VRRM | 85 V - allows use in 48 V industrial bus clamping and 24 V logic-level protection |
| VF @ 50 mA | 1.1 V max - ensures low conduction loss in low-current signal path applications |
| Capacitance (Cd) | 2 pF at VR = 0 V, f = 1 MHz - minimizes signal distortion in RF-coupled or high-frequency sampling paths |
| Ptot | 250 mW at Tamb ≤ 25 °C - defines thermal derating envelope for compact PCB layouts |
Pinout & Package
Package: SOD323 - plastic surface-mount package, 1.7 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, optimized for automated placement and reflow/wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K (cathode) | Connected to higher-potential node during forward conduction; polarity marker for PCB silkscreen and orientation verification |
| 2 | A (anode) | Connected to lower-potential node; terminal where forward current enters; marked as "D4" on top-side marking |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low reverse leakage | Typ. 3 pA at 25 °C → preserves accuracy in µA-range bias networks and photodiode amplifiers |
| Fast, consistent trr | 0.8 µs typ., 3 µs max → enables reliable timing in pulse-shaping and analog switch control |
| SOD323 footprint compatibility | Standardized 1.3 mm pitch, 1.7 × 1.25 mm body → ensures drop-in replacement in legacy 0805-class layouts |
| Thermal robustness | Tj(max) = 150 °C with defined Rth(j-a) = 450 K/W → supports operation in sealed enclosures without forced cooling |
Applications
| High-Impedance Sensor Biasing | Low-Power Signal Clamping |
|---|---|
Use Scenario: Maintaining stable DC bias for MEMS accelerometers and piezoresistive pressure sensors operating in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Precision reverse-biased clamping diode limiting input swing while minimizing leakage-induced offset drift. Use Value: 0.003 nA IR prevents >100 mV error in 10 MΩ sensor bridge arms, preserving 12-bit ADC resolution over temperature. |
Use Scenario: Protecting ADC inputs and op-amp rails from ESD transients and overvoltage in portable medical monitors. IC Role / Device Role / Timing Role: Fast-switching clamp limiting transient excursions to <1.1 V above rail without latch-up risk. Use Value: 0.8 µs trr ensures clamping action completes before 100 ns pulse edges propagate into sensitive analog circuitry. |
| Sample-and-Hold Hold Capacitor Isolation | Low-Current Logic-Level Translation |
Use Scenario: Isolating hold capacitors from charging/discharging paths in precision data acquisition systems with 16+ bit resolution. IC Role / Device Role / Timing Role: Low-leakage series switch controlling charge retention on 10–100 pF hold capacitors between conversion cycles. Use Value: 3 pA leakage contributes <0.1 LSB drift over 10 ms hold time in 16-bit, 5 V full-scale systems. |
Use Scenario: Level-shifting GPIO signals between 3.3 V microcontrollers and 5 V peripherals in industrial HMI panels. IC Role / Device Role / Timing Role: Passive forward-biased diode providing ~0.7 V offset with minimal loading on source driver. Use Value: 1.1 V VF at 50 mA ensures <10 µA load on 3.3 V GPIO even under worst-case process/voltage/temp corners. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-leakage switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSVRBAS416WT1G | Automotive-qualified (-Q), same SOD323 package and trr spec, but IR = 5 nA max at 75 V/25 °C - 16× higher than BAS416Z typ. | Required for AEC-Q101-compliant automotive modules; not needed for commercial industrial designs. | Select only if automotive qualification is mandated; otherwise BAS416Z offers superior leakage performance at lower cost. |
| Diodes Inc. BAV199LT1G | Higher VF (1.25 V max @ 50 mA), faster trr (4 ns typ.), but IR = 100 nA max - 33,000× higher leakage than BAS416Z typ. | Suitable for digital signal steering where speed dominates; unsuitable for precision analog biasing. | Choose only when nanosecond switching outweighs leakage sensitivity; avoid in sensor or sample-hold circuits. |
Compared with NSVRBAS416WT1G and BAV199LT1G, the BAS416Z uniquely balances ultra-low leakage (3 pA typ.) with medium-speed recovery (0.8 µs), making it optimal for high-accuracy analog signal conditioning where both precision and timing matter - not just speed or ruggedness alone.
Availability
BAS416Z is available at Aetrix Electronics and suitable for high-impedance sensor biasing, low-power signal clamping, and sample-and-hold capacitor isolation requiring stable component supply and consistent low-leakage performance across production batches.
Supply support for BAS416Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET devices, headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.
The BAS416Z belongs to Nexperia's low-leakage switching diode product line, engineered specifically for precision analog signal integrity in space-constrained SMD applications - not general-purpose rectification or power handling.
FAQ
What is the maximum continuous forward current for BAS416Z at 70 °C ambient?
At Tamb = 70 °C, the maximum continuous forward current is approximately 120 mA, derived from the derating curve in Figure 1 of the datasheet: IF decreases linearly from 200 mA at 25 °C to 0 mA at 150 °C, yielding 200 × (1 − (70−25)/125) = 120 mA. This assumes mounting on FR4 with single-sided copper and standard footprint.
Is BAS416Z suitable for automotive applications?
No. The BAS416Z is explicitly designated as non-automotive qualified per Revision History section 14: "Product(s) changed to non-automotive qualification." It lacks AEC-Q101 stress testing and automotive-grade screening. For automotive use, Nexperia recommends the NSVRBAS416WT1G variant instead.
How does BAS416Z reverse leakage change at 125 °C junction temperature?
Per Figure 4, at VR = 75 V and Tj = 125 °C, typical reverse leakage is ~30 nA - a 10,000× increase over the 25 °C typ. value of 3 pA. Maximum IR at this condition is ~50 nA. This exponential rise must be accounted for in high-temperature bias network design.
What is the recommended reflow soldering profile for BAS416Z?
The recommended reflow profile follows JEDEC J-STD-020, with peak temperature ≤ 260 °C for ≤ 30 seconds. Figure 8 specifies solder land dimensions (0.5 mm × 0.6 mm), solder resist openings (0.6 mm × 0.6 mm), and paste volume targeting 100–120% coverage. Preheat ramp rate should not exceed 3 °C/s to avoid thermal shock.
BAS416Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-76, SOD-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 200mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-323
- Operating Temperature - Junction:
- 150°C (Max)
BAS416Z FAQ
1.How can I place an order for BAS416Z through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS416Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS416Z reliable?
The price and inventory of BAS416Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS416Z is usually 5 days.
3.What payment methods are accepted for BAS416Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS416Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS416Z?
BAS416Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS416Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS416Z?
For technical support, including BAS416Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS416Z requirements.
6.How does Aetrix verify that BAS416Z is sourced from the original manufacturer or authorized distributors?
All BAS416Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS416Z meets industry standards.
7.What is the process for return or replacement of BAS416Z?
All BAS416Z units undergo pre-shipment inspection (PSI). If there is an issue with BAS416Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS416Z part is unused and in its original packaging.
Return procedure for BAS416Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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