Nexperia USA Inc. BAS45A,113

Overview

BAS45A,113 from Nexperia is a low-leakage epitaxial medium-speed switching diode in a hermetically sealed SOD68 (DO-34) glass package, rated for 125 V repetitive peak reverse voltage, 625 mA repetitive peak forward current, and 1 nA max reverse current at 125 V and 25 °C - used in precision sample-and-hold circuits and high-impedance bias networks where leakage-induced error must be minimized.

For engineers reviewing the BAS45A,113 datasheet, BAS45A,113 pinout, BAS45A,113 application, or BAS45A,113 equivalent, key selection criteria include verified sub-nA reverse leakage at full rated voltage, 1.5 μs reverse recovery time, thermal resistance of 500 K/W (junction-to-ambient), and DO-34 mechanical compatibility with legacy through-hole layouts.

Technical Context

This diode employs an epitaxial silicon structure optimized for low surface recombination, enabling stable 1 nA IR at VR = 125 V and Tj = 25 °C. Its 4 pF junction capacitance at 0 V and 1.5 μs trr support medium-speed switching in analog front-ends without compromising DC integrity.

The SOD68 package uses axial leads with a cathode band marking, and its glass-sealed construction ensures long-term parameter stability under humidity and thermal cycling - critical for instrumentation-grade signal conditioning paths.

Key Specifications

Pinout & Package

Hermetically sealed glass SOD68 (DO-34) package with axial leads; black band denotes cathode terminal. Leads are tinned copper, suitable for wave or hand soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage diode applications.

Compared with BAS45A,113, the 1N4148W,115 trades leakage performance for SMT compatibility, while the BAS16,113 retains the DO-34 form factor but sacrifices 25 V reverse margin - making BAS45A,113 uniquely suited for 100–125 V precision analog protection where both leakage and voltage headroom are non-negotiable.

Availability

BAS45A,113 is available at Aetrix Electronics and suitable for precision analog instrumentation, photodiode front-end protection, and legacy industrial control systems requiring stable component supply across extended product lifecycles.

Supply support for BAS45A,113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in high-volume discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, and consumer markets with robust, scalable components.

The BAS45A belongs to Nexperia's legacy low-leakage diode product line, engineered specifically for analog signal integrity preservation in high-impedance, low-current measurement and conditioning circuits.

FAQ

What is the maximum allowable junction temperature for BAS45A,113?

The absolute maximum junction temperature is 175 °C, as specified in the Limiting Values table. Operation at this temperature requires strict thermal design - including ambient temperature control and PCB copper area - since R_{th j-a} is 500 K/W. Derating curves in Figure 2 confirm continuous forward current drops to zero above 150 °C ambient.

Is BAS45A,113 suitable for photovoltaic detector biasing?

Yes - its 1 nA reverse current at 125 V and 4 pF capacitance minimize dark current injection and capacitive loading on photodiode junctions. It has been validated in photodiode transimpedance amplifiers operating up to 1 MHz, where low IR and stable Cd prevent baseline shift and bandwidth roll-off.

Does BAS45A,113 have a qualified AEC-Q101 rating for automotive use?

No - BAS45A,113 is not AEC-Q101 qualified. It is a legacy industrial-grade device with extended temperature range (–65 to +175 °C), but lacks the stress testing, failure analysis, and documentation required for automotive qualification. For AEC-Q101 applications, consider Nexperia's PMEG series Schottky diodes.

Can BAS45A,113 replace 1N914 in existing designs?

Yes, with verification - both are DO-34 packaged silicon switching diodes, but BAS45A,113 offers 125 V V_RRM vs. 1N914's 75 V and 1 nA IR vs. 25 nA. The improved specs allow direct substitution in high-voltage or ultra-low-leakage upgrades, though layout and thermal validation are recommended due to differing trr (1.5 μs vs. ~4 ns) and VF characteristics.