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Nexperia USA Inc. BAS45A,133

Part No.:
BAS45A,133
Manufacturer:
Nexperia USA Inc.
Category:
Single Diodes
Package:
DO-204AG, DO-34, Axial
Datasheet:
AetrixBAS45A,133.pdf
Description:
DIODE GEN PURP 125V 250MA DO34
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,540

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Product details

Overview

BAS45A,133 from Nexperia is a low-leakage epitaxial switching diode in a hermetically sealed SOD68 (DO-34) glass package, rated for 125 V repetitive peak reverse voltage, 625 mA repetitive peak forward current, and 1 nA max reverse current at 125 V and 25 °C - used in precision sample-and-hold circuits and high-impedance bias networks where leakage-induced error must be minimized.

For engineers reviewing the BAS45A,133 datasheet, BAS45A,133 pinout, BAS45A,133 application, or BAS45A,133 equivalent, key selection criteria include verified sub-nA reverse leakage at full rated voltage, 1.5 μs reverse recovery time, thermal resistance of 500 K/W (junction-to-ambient), and compatibility with through-hole PCB assembly in legacy industrial instrumentation designs.

Technical Context

This diode employs an epitaxial construction to achieve stable low-leakage performance across temperature, with reverse current specified up to 2 μA at 125 V and 150 °C. Its 4 pF capacitance at 0 V and 1 MHz supports medium-speed switching in analog front-end protection and signal routing.

The device operates within a junction temperature range of −65 °C to +175 °C and delivers 300 mW total power dissipation at 25 °C ambient. Thermal resistance from junction to tie-point is 300 K/W, enabling predictable derating in compact layouts without heatsinking.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM125 V - maximum repetitive reverse voltage before breakdown; defines safe operating window in high-impedance DC bias chains
IR @ 125 V, 25 °C1 nA - ultra-low leakage ensures minimal error current in precision integrators and photodiode biasing
trr1.5 μs - enables reliable operation in 500 kHz–1 MHz switching applications such as analog multiplexer guarding
Cd @ 0 V, 1 MHz4 pF - low junction capacitance preserves signal integrity in RF detector and fast-sampling hold circuits
Ptot @ 25 °C300 mW - sets absolute power limit for continuous forward conduction without forced cooling
Rth j-a500 K/W - thermal resistance determines junction temperature rise under given ambient and layout conditions

Pinout & Package

The BAS45A,133 is housed in a hermetically sealed SOD68 (DO-34) glass package with axial leads; the black band denotes the cathode terminal. No metallization pad is required on PCB per datasheet mounting note.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnected to lower-potential node in reverse-biased protection or forward-conducting clamp configurations
Cathode (marked)Forward current exit / reverse-blocking terminalBlack band identifies polarity; critical for correct orientation in high-reliability analog signal paths

Key Features

FeatureDesign Value
Hermetic glass encapsulationPrevents moisture ingress and long-term parameter drift in humid or high-reliability environments
1 nA max reverse leakage @ 125 VEnables use in femtoampere-level current measurement front-ends without guard-ring compensation
1.5 μs reverse recovery timeSupports clean switching in 1 MHz sample-and-hold amplifiers without tail current artifacts
−65 °C to +175 °C operating rangeValidates suitability for under-hood automotive sensors and downhole industrial monitoring

Applications

Sample-and-Hold CircuitsPhotodiode Bias Networks

Use Scenario: Maintaining precise analog voltage levels during ADC conversion windows in data acquisition systems.

IC Role / Device Role: Low-leakage hold switch isolating capacitor from input source during sampling phase.

Use Value: 1 nA leakage limits voltage droop to <0.1 mV/s on 10 nF hold capacitors, preserving 16-bit accuracy over 10 ms intervals.

Use Scenario: Providing stable reverse bias to silicon photodiodes in optical smoke detectors and spectrophotometers.

IC Role / Device Role: High-impedance bias element minimizing dark-current contribution to photocurrent measurement.

Use Value: Sub-nA leakage avoids false-triggering in picoampere-level photocurrent detection at 125 V bias.

High-Voltage Analog MultiplexersLegacy Industrial Instrumentation

Use Scenario: Guarding analog MUX channels against crosstalk and charge injection in multi-channel sensor interfaces.

IC Role / Device Role: Leakage-controlled clamping diode shunting transient energy during channel switching.

Use Value: 4 pF capacitance and 1.5 μs trr prevent settling errors in 100 kSPS multiplexed acquisition systems.

Use Scenario: Replacing obsolete diodes in calibrated pressure transmitters and thermocouple cold-junction compensators.

IC Role / Device Role: Precision reference path component requiring long-term stability and traceable parametric consistency.

Use Value: Hermetic DO-34 package and −65 °C to +175 °C rating ensure 20+ year field reliability in unattended installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAS45,113Same die, but packaged in SOD57 (DO-35); 2.5 pF capacitance vs. 4 pF; 0.5 nA IR max at 125 VLower capacitance suits higher-frequency (>2 MHz) sample-and-hold; tighter leakage spec improves ultra-low-current sensingSelect when board space allows smaller DO-35 footprint and sub-0.5 nA leakage is required
1N4148W,115Higher IR (25 nA @ 100 V); faster trr (4 ns); 4 pF; same SOD123 packageNot suitable for <10 nA leakage-critical roles; acceptable for general-purpose clamping where speed dominatesChoose only for non-precision digital or power rail protection where leakage is not constrained

Compared with BAS45,113, the BAS45A,133 trades slightly higher capacitance and leakage for superior mechanical robustness in axial-lead assemblies; versus 1N4148W,115, it delivers >20× lower leakage at full voltage - critical for metrology-grade analog signal conditioning.

Availability

BAS45A,133 is available at Aetrix Electronics and suitable for precision analog instrumentation, photodetector biasing, and legacy industrial control systems requiring stable component supply and long-lifecycle support.

Supply support for BAS45A,133 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, serving automotive, industrial, computing, and consumer markets with high-volume, high-reliability components.

The BAS45A,133 belongs to Nexperia's legacy low-leakage diode product line, engineered specifically for analog signal-path integrity in measurement, sensing, and high-impedance bias applications.

FAQ

What is the maximum allowable reverse voltage for continuous operation?

The BAS45A,133 supports 125 V continuous reverse voltage (VR) and 125 V repetitive peak reverse voltage (VRRM). Operation beyond this risks irreversible avalanche breakdown. Derating is recommended above 85 °C ambient due to increased leakage and reduced thermal margin.

Is the BAS45A,133 suitable for surface-mount assembly?

No - the BAS45A,133 uses an axial-leaded SOD68 (DO-34) glass package designed exclusively for through-hole mounting. It lacks solder pads or terminations compatible with reflow or wave soldering processes used in SMT lines.

How does junction temperature affect reverse leakage performance?

Reverse leakage increases exponentially with junction temperature: from 1 nA at 25 °C and 125 V to 500 nA at 150 °C and 125 V. Designers must calculate Tj using Rth j-a = 500 K/W and ambient conditions to ensure leakage remains within system error budgets.

Can the BAS45A,133 replace the 1N4148 in precision analog circuits?

No - while both are switching diodes, the 1N4148 exhibits ~25 nA reverse leakage at 100 V, over 25× higher than the BAS45A,133's 1 nA at 125 V. In precision analog paths, this difference causes measurable offset and drift; substitution requires full circuit validation.

BAS45A,133 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
DO-204AG, DO-34, Axial
Packaging:
Cut Tape (CT)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
125 V
Current - Average Rectified (Io):
250mA
Voltage - Forward (Vf) (Max) @ If:
1 V @ 100 mA
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
1.5 µs
Current - Reverse Leakage @ Vr:
1 nA @ 125 V
Capacitance @ Vr, F:
4pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
DO-34
Operating Temperature - Junction:
175°C (Max)

BAS45A,133 FAQ

1.How can I place an order for BAS45A,133 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS45A,133 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS45A,133 reliable?

The price and inventory of BAS45A,133 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS45A,133 is usually 5 days.

3.What payment methods are accepted for BAS45A,133?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS45A,133 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS45A,133?

BAS45A,133 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS45A,133 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS45A,133?

For technical support, including BAS45A,133 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS45A,133 requirements.

6.How does Aetrix verify that BAS45A,133 is sourced from the original manufacturer or authorized distributors?

All BAS45A,133 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS45A,133 meets industry standards.

7.What is the process for return or replacement of BAS45A,133?

All BAS45A,133 units undergo pre-shipment inspection (PSI). If there is an issue with BAS45A,133, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS45A,133 part is unused and in its original packaging.

Return procedure for BAS45A,133:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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