Nexperia USA Inc. BAS45AL,115

Overview

BAS45AL,115 from Nexperia is a hermetically sealed glass SOD80C surface-mount epitaxial medium-speed switching diode optimized for low leakage current applications. It delivers 125 V repetitive peak reverse voltage, 625 mA repetitive peak forward current, and typ. 1.5 μs reverse recovery time, with reverse current as low as 1 nA at 125 V and 25 °C - used in precision sample-and-hold circuits and high-impedance bias networks.

For engineers reviewing the BAS45AL,115 datasheet, BAS45AL,115 pinout, BAS45AL,115 application, or BAS45AL,115 equivalent, key selection criteria include verified low IR (≤1 nA @ VR=125 V), fast trr (1.5 μs), VF stability across 1–100 mA, thermal resistance (Rth(j-a) = 375 K/W), and SOD80C package compatibility with FR4 reflow profiles.

Technical Context

This diode employs an epitaxial silicon structure enabling stable low-leakage performance up to 125 °C junction temperature, with reverse recovery characterized under IF = 10 mA → IR = 10 mA, RL = 100 Ω, and IR = 1 mA measurement condition. Its 4 pF capacitance at 0 V reverse bias supports high-frequency signal path integrity.

The device operates within a 175 °C maximum junction temperature limit and dissipates up to 400 mW at Tamb ≤ 25 °C, with thermal resistance from junction to ambient (375 K/W) defined on standard FR4 single-sided copper PCB - critical for thermally constrained SMD layouts.

Key Specifications

Pinout & Package

Encapsulated in a hermetically sealed glass SOD80C package (3.3–3.7 mm length, 1.45–1.60 mm width, 0.3 mm height), with cathode identified by a marking band. The package is optimized for reflow soldering on FR4 PCBs using standardized footprint dimensions (2.30 × 4.30 mm solder lands).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage switching diode applications.

Compared with BAS45AL,115, BAS16,115 trades 45 V blocking headroom for marginal cost reduction, while 1N4148W-7-F sacrifices leakage performance and thermal efficiency for broader availability - making BAS45AL,115 optimal for precision 100–125 V blocking where sub-nA leakage is non-negotiable.

Availability

BAS45AL,115 is available at Aetrix Electronics and suitable for precision analog signal conditioning, high-impedance sensor interfaces, and medium-speed power supply protection requiring stable component supply and guaranteed low-leakage performance.

Supply support for BAS45AL,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices, founded as a spin-off from Philips and headquartered in Nijmegen, Netherlands.

The BAS45AL belongs to Nexperia's low-leakage switching diode product line, engineered specifically for applications demanding nanoscale reverse current control and stable medium-speed switching in compact SMD formats.

FAQ

What is the maximum allowable junction temperature for BAS45AL,115?

The absolute maximum junction temperature is 175 °C, as specified in Table 5 of the Nexperia datasheet Rev. 5. Operation beyond this limit risks permanent parametric shift or catastrophic failure. Derating begins at Tamb > 25 °C per the Fig 1 derating curve, where forward current must be reduced linearly to maintain Tj ≤ 175 °C.

Is BAS45AL,115 suitable for automotive applications?

No - the BAS45AL,115 is not automotive-qualified. Per Nexperia's legal disclaimers (Section 13.4), it is neither tested nor warranted for automotive use. It lacks AEC-Q101 qualification, and its reliability data does not cover automotive temperature cycling, humidity, or vibration requirements.

How does the SOD80C package differ from SOD-123 in thermal performance?

SOD80C has lower Rth(j-a) (375 K/W vs. ~450–500 K/W for typical SOD-123) due to its shorter leadframe and tighter thermal path, confirmed by Nexperia's thermal characterization in Table 6. This yields ~15–20 % lower junction temperature rise at identical power dissipation on FR4 PCBs.

Can BAS45AL,115 replace BAT54 in low-leakage applications?

No - BAT54 is a Schottky diode with VF ≈ 300 mV but IR ≈ 1 μA at 30 V, making it unsuitable where sub-nA leakage at >100 V is required. BAS45AL,115 provides 1000× lower IR at high VR but higher VF; substitution would compromise leakage-critical functions despite similar package size.