STMicroelectronics BAS69-07P6FILM

Overview

BAS69-07P6FILM from STMicroelectronics is a dual parallel-connected low-capacitance Schottky diode in SOT-666 package, designed for RF signal detection and voltage drift compensation in compact high-frequency circuits. It features 15 V reverse voltage rating, <1 pF typical junction capacitance at 0 V, 10 mA continuous forward current, and operates up to 150 °C junction temperature.

For engineers reviewing the BAS69-07P6FILM datasheet, BAS69-07P6FILM pinout, BAS69-07P6FILM application, or BAS69-07P6FILM equivalent, key selection criteria include ultra-low capacitance for minimal RF disturbance, parallel-diode configuration for improved current handling in detector/compensation paths, and SOT-666 footprint compatibility with space-constrained RF front-ends.

Technical Context

The BAS69-07P6FILM integrates two identical Schottky diodes in parallel within a single SOT-666 package, sharing common anode and cathode terminals-enabling higher effective forward current (10 mA per diode, 20 mA aggregate) while maintaining sub-1 pF capacitance. Its 15 V barrier height supports RF detection up to UHF bands without breakdown.

Thermal resistance is 600 °C/W (junction-to-ambient, epoxy PCB), and dynamic parameters include 15 Ω RF forward resistance at 100 MHz and 1.5 nH series inductance-critical for preserving signal integrity in impedance-matched 50 Ω RF paths.

Key Specifications

Pinout & Package

SOT-666 is a 6-pin, 1.5 × 1.7 mm surface-mount package with exposed thermal pad; pins are arranged in two rows (3+3), supporting dual-diode configurations with shared terminals. The BAS69-07P6FILM uses pins 1–3 for one diode and pins 4–6 for the second, internally wired in parallel (anodes joined, cathodes joined).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-capacitance Schottky diode applications.

Compared with NSVRB05150XV6T1G and BAT54CW-7-F, the BAS69-07P6FILM uniquely balances ultra-low capacitance (<1 pF), parallel-diode robustness, and SOT-666 miniaturization-making it optimal for UHF detector and temperature-compensated bias circuits where both RF fidelity and thermal stability are non-negotiable.

Availability

BAS69-07P6FILM is available at Aetrix Electronics and suitable for RF signal detection, temperature-compensated bias networks, UHF antenna switch control, and low-noise receiver front-end protection requiring stable component supply and consistent parametric performance across production batches.

Supply support for BAS69-07P6FILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, analog components, and discrete devices for industrial, automotive, and consumer markets.

The BAS69 series belongs to ST's RF-optimized Schottky diode product line, engineered specifically for high-frequency signal conditioning, detection, and compensation in space-constrained wireless infrastructure and sensing systems.

FAQ

What is the maximum RF frequency range supported by BAS69-07P6FILM?

The BAS69-07P6FILM supports operation up to 2.4 GHz based on its 1.5 nH series inductance and <1 pF junction capacitance, which yield an inherent self-resonant frequency above 3 GHz. Measured RF forward resistance remains stable at 15 Ω up to 100 MHz, and typical application data confirms reliable envelope detection in 800–2400 MHz ISM bands.

How does the parallel configuration affect thermal performance?

The parallel configuration distributes forward current across two die, reducing localized junction temperature rise by ~30% versus a single-diode equivalent at 10 mA per path. Combined with the SOT-666 thermal pad, this enables sustained operation at 125 °C ambient with T_j ≤ 140 °C under typical RF detector duty cycles.

Can BAS69-07P6FILM replace BAS69-05WFILM in a common-cathode circuit?

No-BAS69-07P6FILM has parallel (not common-cathode) topology: both anodes and both cathodes are internally shorted. Using it in place of BAS69-05WFILM (common-cathode, independent anodes) would short the anode nodes, disrupting bias sequencing and potentially damaging upstream drivers.

Is the SOT-666 package lead-free and RoHS-compliant?

Yes-BAS69-07P6FILM is supplied in ECOPACK®2-compliant SOT-666 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device carries "P6" in its order code and is marked "67" on the top surface, confirming lead-free termination and halogen-free molding compound.