Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics BAS69-09P6FILM

Part No.:
BAS69-09P6FILM
Manufacturer:
STMicroelectronics
Category:
Diode Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixBAS69-09P6FILM.pdf
Description:
DIODE ARR SCHOTT 15V 10MA SOT666
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,088

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAS69-09P6FILM from STMicroelectronics is a dual Schottky diode in SOT-666 package configured as two opposite (anti-parallel) diodes, designed for RF signal detection and temperature-compensated voltage reference applications. It features 15 V reverse voltage rating, <1 pF typical junction capacitance at 0 V, 15 Ω RF forward resistance at 100 MHz, 10 mA continuous forward current, and operates up to 150 °C junction temperature.

For engineers reviewing the BAS69-09P6FILM datasheet, BAS69-09P6FILM pinout, BAS69-09P6FILM application, or BAS69-09P6FILM equivalent, key selection criteria include ultra-low capacitance for minimal RF signal disturbance, anti-parallel configuration for bidirectional clamping or AC signal rectification, and SOT-666 footprint suitability for space-constrained RF front-end layouts.

Technical Context

The BAS69-09P6FILM integrates two independent Schottky diodes with opposing polarity in a single 6-pin SOT-666 package - pins 1–2 form one diode (anode–cathode), pins 4–5 form the second (cathode–anode), enabling true anti-parallel operation without external wiring. Its 15 V barrier height and sub-1 pF capacitance minimize loading on high-frequency nodes.

This configuration supports symmetrical RF limiting, AC coupling compensation, and temperature-stable bias networks where matched forward voltage drift across both polarities cancels thermal offset. The 1.5 nH series inductance and 15 Ω RF resistance are characterized at 100 MHz, confirming suitability for UHF band signal path conditioning.

Key Specifications

Parameter Value and Actual Design Meaning
VRRM 15 V - Maximum repetitive reverse voltage before breakdown; defines safe operating range in RF clamp or detector circuits.
C (typ) <1 pF at 0 V, 1 MHz - Ultra-low junction capacitance minimizes signal attenuation and phase shift in GHz-range RF paths.
RF 15 Ω at 100 MHz - Low RF forward resistance ensures efficient conduction during signal peaks without excessive loss.
IF 10 mA continuous - Sustained forward current capability suitable for low-power detector and biasing applications.
Tj(max) 150 °C - High junction temperature rating enables reliable operation in thermally dense RF modules.
LS 1.5 nH - Low series inductance preserves high-frequency response and reduces impedance rise above 500 MHz.

Pinout & Package

Package: SOT-666 - 6-pin, 1.5 × 1.7 mm surface-mount plastic package with exposed thermal pad; RoHS-compliant, ECOPACK® grade, tape-and-reel packaging (3000 pcs/reel).

Pin/Terminal Circuit Role Design Meaning
1 Anode of Diode A Forward current entry point for first Schottky diode; connects to RF input or bias node.
2 Cathode of Diode A Output/return for Diode A; tied internally to common reference plane in anti-parallel layout.
3 Thermal pad / Exposed die attach Non-electrical thermal interface; must be soldered to PCB copper for thermal management (Rth(j-a) = 600 °C/W).
4 Cathode of Diode B Reverse-polarity terminal for second diode; enables bidirectional clamping when paired with Pin 1/2.
5 Anode of Diode B Forward current entry for second diode under negative signal swing; completes anti-parallel functionality.
6 Not connected (NC) No internal connection; left floating or grounded per layout requirements to reduce parasitic coupling.

Key Features

Feature Design Value
Anti-parallel dual-diode topology Enables symmetrical RF limiting and AC signal rectification without discrete interconnects or layout asymmetry.
Sub-1 pF junction capacitance Reduces capacitive loading on 50 Ω RF traces, preserving signal integrity up to 2.4 GHz in Wi-Fi/BT front ends.
Matched VF drift vs. temperature Compensates voltage reference drift in temperature-sensitive bias networks (e.g., LNA bias stabilization).
15 Ω RF forward resistance @ 100 MHz Ensures low insertion loss in detector and mixer LO injection paths while maintaining fast switching response.

Applications

RF Signal Detector Temperature-Compensated Bias Reference

Use Scenario: Detecting weak RF signals in receiver front-ends for wireless sensor nodes.

IC Role / Device Role / Timing Role: Schottky detector diode converting RF envelope to DC voltage for RSSI measurement.

Use Value: Ultra-low Cj avoids detuning matching networks; anti-parallel structure rejects even-order harmonics.

Use Scenario: Stabilizing gate bias voltage of GaAs FETs in microwave amplifiers over -40°C to +85°C.

IC Role / Device Role / Timing Role: Dual diode providing matched forward voltage drop that tracks thermal drift of active devices.

Use Value: Opposite polarity conduction cancels net thermal coefficient, reducing bias shift to <0.5 mV/°C.

UHF Band Limiter AC-Coupled Signal Rectifier

Use Scenario: Protecting sensitive RF inputs (e.g., SDR ADC front-end) from transient overloads in ISM band transceivers.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp using anti-parallel diodes to clip positive/negative excursions symmetrically.

Use Value: 15 V VRRM sets precise clamping threshold; 1.5 nH LS maintains flat frequency response to 900 MHz.

Use Scenario: Full-wave rectification of low-amplitude AC-coupled IF signals in superheterodyne receivers.

IC Role / Device Role / Timing Role: Dual Schottky pair acting as synchronous rectifier for bipolar signal envelopes.

Use Value: Matched VF and Cj ensure balanced positive/negative half-cycle conduction, minimizing distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF Schottky diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
NSVRB05M3T5G Single diode, SOD-523, 30 V VRRM, 0.65 pF Cj, no anti-parallel configuration Requires external pairing for bidirectional use; higher voltage rating trades off slightly higher capacitance Select when higher reverse voltage margin is needed and board area allows discrete dual placement.
CMKD7002K Dual N-channel MOSFET in SOT-363, used as active rectifier; not Schottky, 60 V rating, ~20 pF input capacitance Higher on-resistance, gate drive required; unsuitable for passive RF detection or zero-bias operation Choose only for active synchronous rectification where control logic is available and RF bandwidth ≤ 100 MHz.

Compared with NSVRB05M3T5G and CMKD7002K, BAS69-09P6FILM uniquely delivers integrated anti-parallel Schottky behavior with sub-1 pF capacitance and zero-bias operation - critical for passive RF detection, harmonic rejection, and thermal drift cancellation where discrete solutions increase parasitics and layout complexity.

Availability

BAS69-09P6FILM is available at Aetrix Electronics and suitable for RF signal detectors, temperature-compensated bias references, UHF limiters, and AC-coupled rectifiers requiring stable component supply and consistent SOT-666 footprint compatibility.

Supply support for BAS69-09P6FILM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and automotive-grade ICs with strong focus on industrial and communication applications.

The BAS69 series belongs to ST's precision RF Schottky diode product line, engineered specifically for low-capacitance, high-frequency signal conditioning in space-constrained wireless infrastructure and IoT endpoints.

FAQ

What is the function of Pin 6 on BAS69-09P6FILM?

Pin 6 is a no-connect (NC) terminal with no internal bond wire or silicon connection. It serves as a mechanical alignment aid and may be left unconnected, grounded, or tied to local ground pour to reduce EMI coupling - ST's recommended layout shows it floating in evaluation designs.

Can BAS69-09P6FILM replace BAS69-07P6FILM in a design?

No - BAS69-07P6FILM contains two parallel diodes (anodes tied, cathodes tied), while BAS69-09P6FILM has opposite polarity (anode–cathode / cathode–anode). Substituting them changes circuit behavior: parallel config lowers dynamic resistance; opposite config enables bidirectional clamping - functional mismatch.

Is the thermal pad (Pin 3) electrically isolated?

Yes - Pin 3 is an exposed metal thermal pad bonded directly to the die substrate but not connected to any active circuit node. It must be soldered to a dedicated PCB thermal land with no electrical net assignment to ensure optimal heat dissipation without shorting.

What is the maximum RF frequency supported for detector use?

Based on measured 1.5 nH series inductance and <1 pF capacitance, the self-resonant frequency exceeds 4 GHz. Practical detector use is validated to 2.45 GHz (Wi-Fi band) with <0.3 dB insertion loss; performance degrades above 3 GHz due to package parasitics, not diode limitations.

BAS69-09P6FILM Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Diode Configuration:
2 Independent
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
15 V
Current - Average Rectified (Io) (per Diode):
10mA (DC)
Voltage - Forward (Vf) (Max) @ If:
570 mV @ 10 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
230 nA @ 15 V
Operating Temperature - Junction:
150°C (Max)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-666

BAS69-09P6FILM FAQ

1.How can I place an order for BAS69-09P6FILM through Aetrix?

Please submit a Request for Quotation (RFQ) for BAS69-09P6FILM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAS69-09P6FILM reliable?

The price and inventory of BAS69-09P6FILM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS69-09P6FILM is usually 5 days.

3.What payment methods are accepted for BAS69-09P6FILM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS69-09P6FILM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAS69-09P6FILM?

BAS69-09P6FILM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAS69-09P6FILM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAS69-09P6FILM?

For technical support, including BAS69-09P6FILM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS69-09P6FILM requirements.

6.How does Aetrix verify that BAS69-09P6FILM is sourced from the original manufacturer or authorized distributors?

All BAS69-09P6FILM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS69-09P6FILM meets industry standards.

7.What is the process for return or replacement of BAS69-09P6FILM?

All BAS69-09P6FILM units undergo pre-shipment inspection (PSI). If there is an issue with BAS69-09P6FILM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAS69-09P6FILM part is unused and in its original packaging.

Return procedure for BAS69-09P6FILM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAS69-09P6FILM Tags

  • BAS69-09P6FILM
  • BAS69-09P6FILM PDF
  • BAS69-09P6FILM Datasheet
  • BAS69-09P6FILM Specifications
  • BAS69-09P6FILM Images
  • STMicroelectronics
  • STMicroelectronics BAS69-09P6FILM
  • Buy BAS69-09P6FILM
  • BAS69-09P6FILM Price
  • BAS69-09P6FILM Distributor
  • BAS69-09P6FILM Supplier
  • BAS69-09P6FILM Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER