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Infineon Technologies BAS70-02WE6327
- Part No.:
- BAS70-02WE6327
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- SC-80
- Datasheet:
-
BAS70-02WE6327.pdf
- Description:
- DIODE SCHOTTKY 70V 70MA SCD80-2
- Quantity:
- Payment:
- Shipping:
Inventory:26,751
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Product details
Overview
BAS70-02WE6327 from Infineon Technologies is a silicon Schottky diode in SOD323 package configured as a single discrete device, with 70 V reverse voltage rating, 70 mA forward current, 375 mV typical forward voltage at 10 mA, 1.5 pF diode capacitance at 0 V, and 100 ps reverse recovery time - used for high-speed switching and voltage clamping in portable power management circuits.
For engineers reviewing the BAS70-02WE6327 datasheet, BAS70-02WE6327 pinout, BAS70-02WE6327 application, or BAS70-02WE6327 equivalent, key selection criteria include low VF matching in dual-rail bias networks, thermal resistance (RthJS ≤ 310 K/W), IR < 0.1 µA at 50 V, and SOD323 footprint compatibility with space-constrained DC-DC feedback paths and ESD protection nodes.
Technical Context
This Schottky diode leverages a planar silicon process to achieve fast switching with minimal stored charge (τrr ≤ 100 ps) and low forward conduction loss. Its low CT (1.5 pF typ.) and rf (34 Ω typ.) support RF detector and mixer functions up to UHF frequencies.
The device operates across –55 °C to +125 °C and meets AEC-Q101 qualification for automotive under-hood applications. Junction temperature is limited to 150 °C, with derated IF versus TS curves confirming usable current up to 60 mA at 105 °C ambient in SOD323 mounting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 70 V - supports input rail clamping in 48 V automotive subsystems and 24 V industrial I/O protection. |
| Forward Current (IF) | 70 mA continuous - sufficient for biasing low-power op-amp inputs and LED indicator drivers. |
| Forward Voltage (VF) | 375 mV typ. @ 10 mA - reduces power loss in low-voltage signal path clamping and level-shifting. |
| Diode Capacitance (CT) | 1.5 pF @ 0 V, 1 MHz - enables use in 900 MHz ISM band detectors without significant signal loading. |
| Reverse Recovery Time (τrr) | 100 ps - ensures clean edge fidelity in >10 MHz clock routing and pulse shaping circuits. |
| Reverse Leakage (IR) | ≤ 0.1 µA @ 50 V - maintains accuracy in high-impedance sensing nodes and precision reference dividers. |
| Thermal Resistance (RthJS) | ≤ 310 K/W - defines junction-to-solder-point temperature rise under steady-state 70 mA operation in SOD323 layout. |
Pinout & Package
SOD323 surface-mount plastic package (2.1 mm × 1.3 mm × 0.9 mm), anode-cathode orientation marked by cathode band on package top.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Current entry node | Connected to higher-potential side of clamp or rectifier path; requires trace width ≥ 0.25 mm for 70 mA. |
| Cathode (K) | Current exit node | Connected to reference or ground; cathode band identifies this terminal on top marking surface. |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | 375 mV typ. @ 10 mA - cuts conduction loss by >40% vs. standard silicon PN diodes in 3.3 V logic-level clamps. |
| Ultra-fast recovery | 100 ps τrr - eliminates switching tail distortion in 10–50 MHz pulse generator outputs. |
| Low junction capacitance | 1.5 pF @ 0 V - preserves signal integrity in RF envelope detection and antenna diversity switch control lines. |
| AEC-Q101 qualified | Qualified for automotive grade 1 (–40 °C to +125 °C) - validated for engine control module sensor interface protection. |
Applications
| USB Port ESD Protection | RF Signal Detector |
|---|---|
Use Scenario: Clamping transient surges on USB D+/D− lines during hot-plug events. IC Role / Device Role / Timing Role: Discrete Schottky clamp diode placed between data line and VBUS/GND rails. Use Value: 70 V VR withstands ±15 kV contact ESD per IEC 61000-4-2 while adding <0.5 pF parasitic capacitance to maintain USB 2.0 signal integrity. | Use Scenario: Demodulating AM-modulated RF carrier in 868 MHz wireless sensor transmitters. IC Role / Device Role / Timing Role: Passive envelope detector diode in peak-detect RC circuit. Use Value: 1.5 pF CT and 34 Ω rf enable accurate demodulation up to 1 GHz with minimal amplitude error (<2%) at –20 dBm input. |
| Low-Voltage Logic Level Shifter | DC-DC Converter Feedback Clamp |
Use Scenario: Bidirectional voltage translation between 1.8 V and 3.3 V I²C buses. IC Role / Device Role / Timing Role: Passive clamping diode pair limiting voltage swing to safe logic thresholds. Use Value: 375 mV VF ensures sub-200 ns propagation delay skew and prevents latch-up in mixed-voltage microcontroller GPIO interfaces. | Use Scenario: Protecting optocoupler input in isolated flyback converter feedback loop. IC Role / Device Role / Timing Role: Reverse-biased clamp across optocoupler LED to absorb leakage-induced voltage spikes. Use Value: 0.1 µA IR at 50 V prevents false triggering of feedback regulation while maintaining <1 µW standby dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSSR0230MXV6T1G | Same SOD323 package, 30 V VR, 200 mA IF, 410 mV VF @ 10 mA | Lower VR limits use in 48 V systems; higher IF supports higher-current bias networks | Select when higher surge tolerance and lower VF drift over temperature are required in 3.3 V/5 V domains. |
| Diodes Incorporated SD103ATW-7-F | SOD323, 40 V VR, 200 mA IF, 480 mV VF @ 10 mA, 10 pF CT | Higher CT degrades RF performance above 200 MHz; better suited for general-purpose clamping than RF detection | Prefer for cost-sensitive industrial I/O protection where RF response is not critical. |
Compared with NSSR0230MXV6T1G and SD103ATW-7-F, BAS70-02WE6327 offers superior high-frequency response (1.5 pF CT, 100 ps τrr) and higher VR margin (70 V), making it optimal for automotive signal integrity and UHF detector roles where low parasitics and robust voltage headroom are essential.
Availability
BAS70-02WE6327 is available at Aetrix Electronics and suitable for automotive infotainment system ESD protection, portable medical sensor front-ends, and industrial IoT wireless gateway RF sections requiring stable component supply and long-term lifecycle assurance.
Supply support for BAS70-02WE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The BAS70 series belongs to Infineon's high-speed Schottky diode product line, designed specifically for low-loss, high-frequency signal conditioning and protection in automotive and industrial environments.
FAQ
Is BAS70-02WE6327 RoHS compliant and halogen-free?
Yes, BAS70-02WE6327 is Pb-free and RoHS compliant per EU Directive 2011/65/EU. The SOD323 package uses halogen-free molding compound and meets IEC 61249-2-21 requirements for chlorine and bromine content below 900 ppm each.
What is the maximum junction temperature and how does it affect reliability?
The absolute maximum junction temperature is 150 °C. At 125 °C case temperature, the device delivers 60 mA forward current per derating curve. Operating continuously above 135 °C reduces FIT rate and accelerates metallization migration, so thermal design must limit Tj to ≤130 °C for >10-year automotive field life.
Can BAS70-02WE6327 replace BAS70-04 or BAS70-05 in existing designs?
No - BAS70-02WE6327 is a single-diode SOD323 variant, whereas BAS70-04 is a dual-series configuration and BAS70-05 is common-cathode dual in SOT323. Pin count, package size, and internal topology differ; direct substitution would require PCB layout and schematic revision.
Does this diode exhibit significant forward voltage variation over temperature?
VF decreases by approximately –1.2 mV/°C from 25 °C to 125 °C at 10 mA. This negative TC is typical for Schottky diodes and must be accounted for in precision voltage reference clamps; however, variation remains within ±25 mV across the full operating range, supporting stable threshold behavior.
BAS70-02WE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-80
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 70 V
- Current - Average Rectified (Io):
- 70mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 100 ps
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- 1.5pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SCD80-2
- Operating Temperature - Junction:
- 150°C
BAS70-02WE6327 FAQ
1.How can I place an order for BAS70-02WE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAS70-02WE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAS70-02WE6327 reliable?
The price and inventory of BAS70-02WE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAS70-02WE6327 is usually 5 days.
3.What payment methods are accepted for BAS70-02WE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAS70-02WE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAS70-02WE6327?
BAS70-02WE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAS70-02WE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAS70-02WE6327?
For technical support, including BAS70-02WE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAS70-02WE6327 requirements.
6.How does Aetrix verify that BAS70-02WE6327 is sourced from the original manufacturer or authorized distributors?
All BAS70-02WE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAS70-02WE6327 meets industry standards.
7.What is the process for return or replacement of BAS70-02WE6327?
All BAS70-02WE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAS70-02WE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAS70-02WE6327 part is unused and in its original packaging.
Return procedure for BAS70-02WE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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